Transmission capacity of optical path overhead transfer schemeusing pilot tone for optical path network

Photonic networks based on the optical path concept and wavelength division multiplexing (WDM) technology require unique operation, administration, and maintenance (OAM) functions. In order to realize the required OAM functions, the optical path network must support an effective management information transfer method. The method that superimposes a pilot tone on the optical signal appears very interesting for optical path overhead transfer. The pilot tone transmission capacity is determined by the carrier to noise ratio which depends on the power spectral density of the optical signal. The pilot tone transmission capacity of an optical path network employing WDM technology is elucidated; 4.5 kb/s transmission can be realized when the pilot tone modulation index is set at 3%     

Asymptotic properties on codeword lengths of an optimal FV code for general sources

This correspondence is concerned with asymptotic properties on the codeword length of a fixed-to-variable length code (FV code) for a general source {X/sup n/}/sub n=1//sup /spl infin// with a finite or countably infinite alphabet. Suppose that for each n /spl ges/ 1 X/sup n/ is encoded to a binary codeword /spl phi//sub n/(X/sup n/) of length l(/spl phi//sub n/(X/sup n/)). Letting /spl epsiv//sub n/ denote the decoding error probability, we consider the following two criteria on FV codes: i) /spl epsiv//sub n/ = 0 for all n /spl ges/ 1 and ii) lim sup/sub n/spl rarr//spl infin///spl epsiv//sub n/ /spl les/ /spl epsiv/ for an arbitrarily given /spl epsiv/ /spl isin/ [0,1). Under criterion i), we show that, if X/sup n/ is encoded by an arbitrary prefix-free FV code asymptotically achieving the entropy, 1/nl(/spl phi//sub n/(X/sup n/)) - 1/nlog/sub 2/ 1/PX/sup n/(X/sup n/) /spl rarr/ 0 in probability as n /spl rarr/ /spl infin/ under a certain condition, where P/sub X//sup n/ denotes the probability distribution of X/sup n/. Under criterion ii), we first determine the minimum rate achieved by FV codes. Next, we show that 1/nl(/spl phi//sub n/(X/sup n/)) of an arbitrary FV code achieving the minimum rate in a certain sense has a property similar to the lossless case.     

Polarisation-insensitive high-isolation nonreciprocal device for optical circulator application

A novel high-isolation structure for a polarisation-insensitive nonreciprocal device intended for optical circulator application is proposed. It consists of birefringent crystals and polarisation rotators. Experimental demonstration shows an isolation of over 42 dB and an insertion loss of under 1.5 dB.<>     

Influences of buried-oxide interface on inversion-layer mobility inultra-thin SOI MOSFETs

This paper reports on a study of the inversion-layer mobility in n-channel Si MOSFETs fabricated on a silicon-on-insulator (SOI) substrate. In order to make clear the influences of the buried-oxide interface on the inversion-layer mobility in ultra-thin film SOI transistors, SOI wafers of different quality at the buried-oxide interface were prepared, and the mobility behaviors were compared quantitatively. The transistors with a relatively thick SOI film exhibited the universal relationship between the effective mobility and the effective normal field, regardless of the buried-oxide interface quality. It was found, however, that Coulomb scattering due to charged centers at the backside interface between SOI films and buried oxides has great influence on the effective mobility in the thin SOI thickness region, depending on the buried-oxide interface quality. This means that Coulomb scattering due to charged centers at the buried-oxide interface can degrade the mobility with decreasing SOI thickness, unless the SOI wafer quality at the buried-oxide interface is controlled carefully     

Low-energy electron-enhanced etching of HgCdTe

Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are illustrated. The LE4 mechanism is understood from a mechanistic study in terms of three etch variables: direct current (DC) bias, gas composition, and sample temperature. For this paper, the effects of DC bias (electron energy) and gas composition (CH₄ concentration) are summarized qualitatively, followed by quantitative evidence. Etch rate, the amount of polymer, surface stoichiometry, and surface roughness have specific relations with each etch variable under competition between pure LE4 and polymer deposition.     

Convergence acceleration and accuracy improvement in power bus impedance calculation with a fast algorithm using cavity modes

Based on the cavity-mode model, we have developed a fast algorithm for calculating power bus impedance in multilayer printed circuit boards. The fast algorithm is based on a closed-form expression for the impedance Z matrix of a rectangular power bus structure; this expression was obtained by reducing the original double infinite series into a single infinite series under an approximation. The convergence of the single series is further accelerated analytically. The accelerated single summation enables much faster computation, since use of only a few terms is enough to obtain good accuracy. In addition, we propose two ways to compensate for the error due to the approximation involved in the process of reducing the double series to the single series, and have demonstrated that these two techniques are almost equivalent.     

A 150 ns 16-Mb CMOS SRAM with interdigitated bit-line architecture

Circuit techniques for a reduced-voltage-amplitude data bus, fast access 16-Mb CMOS SRAM are described. An interdigitated bit-line architecture reduces data bus line length, thus minimizing bus capacitance. A hierarchical sense amplifier consists of 32 local sense amplifiers and a current sense amplifier. The current sense amplifier is used to reduce the data bus voltage amplitude and the sensing of the 16-b data bus signals in parallel. Access time of 15 ns and an active power of 165 mW were achieved in a 16-Mb CMOS SRAM. A split-word-line layout memory cell with double-gate pMOS thin-film transistors (TFTs) keeps the transistor width stable while providing high-stability memory cell characteristics. The double-gate pMOS TFT also increases cell-storage node capacitance and soft-error immunity     

Coding Theorems on the Threshold Scheme for a General Source

In this paper, coding theorems on the (t, m) -threshold scheme for a general source are discussed, where m means the number of the shares and t means a threshold. The (t,m) -threshold scheme treated in this paper encrypts n source outputs Xⁿ to m shares at once and is required to satisfy the two conditions that 1) Xⁿ is reproduced from arbitrary t shares, and 2) almost no information of Xⁿ is revealed from any t - 1 shares. It is shown that the (t,m) -threshold scheme must satisfy certain inequalities including the limit inferiors in probability. One of the inequalities is closely related to the minimum length of the fair random bits needed to a dealer for realizing the (t, m) -threshold scheme. In addition, it is shown that a certain variation of Shamir's threshold scheme meets the two conditions. The same approach can be taken to the problems of Shannon's cipher system with the perfect secrecy and fixed-length source coding with vanishing decoding error probability. It is shown that the same kind of inequalities, which indicate the converse coding theorems, hold in both two cases.     

Transmission performance of chirp-controlled signal by usingsemiconductor optical amplifier

We examine the fiber transmission performance of the optical signal whose chirp is controlled by utilizing phase modulation in semiconductor optical amplifier (SOA) with both simulations and experiments. This chirp control technique converts a positive chirp created by electroabsorption (EA) modulator into negative chirp, which reduces the waveform degradation due to the chromatic dispersion in transmission over standard single-mode fiber (SMF). It also provides an optical gain that is sufficient to compensate the insertion loss of the EA modulator. We investigate how the chirp control is affected by the input power to the SOA and the carrier lifetime of the SOA. As the SOA input power increases, the negative chirp becomes large, while the waveform is largely distorted due to gain saturation. However, the waveform distortion at high SOA input powers can be shaped by using a frequency discriminator. The acceleration of the carrier lifetime also reduces the waveform distortion due to gain saturation. We demonstrate that the chirp control technique is effective even for a high bit rate optical signal up to 10 Gb/s, when the carrier lifetime is expedited by optical pumping     

Multipath structure for FSR expansion in waveguide-based optical ring resonator

A multipath structure of a ring resonator is proposed to expand the free spectral range. Simulation work indicates that the multipath ring resonator has 25 GHz-adjacent-channel crosstalk of -41 dB, maximum interchannel crosstalk of -18 dB, and -1 dB bandwidth of 4 GHz for a typical expansion factor of 10. The results show the advantages of characteristics compared with a double-cavity ring resonator and a triple-coupler ring resonator.