Recovery of fluorocarbons in Japan as a measure for abating global warming

The objective of this study is to evaluate the potential for recovering fluorocarbons as measures for the abatement of global warming. In this study, we focused on the three different kinds of fluorocarbons: CFCs, HCFCs and HFCs, and targeted refrigerant use because of the availability of relevant data. We first estimated future fluorocarbon emissions from the targeted appliances; we next compared those emissions in the units of CO₂ equivalent to the level of CO₂ emissions in 1990 from a quantitative point of view. As the result of this study, it was found that fluorocarbon emissions in 1999 and 2010 would be equal to approximately 7 and 3% of the level of CO₂ emissions in 1990 respectively. Moreover, if we implement a 100% recovery rate in every recovery route, we can reduce a large amount of emissions which correspond to approximately 2–5% of the level of CO₂ emissions in 1990, even if we take into account the energy-related CO₂ emissions by the transportation and decomposition of fluorocarbons.     

Perfect Blind-Channel Shortening for Multicarrier Systems

In multicarrier systems, when the order of a channel impulse response is larger than the length of the cyclic prefix (CP), there is a significant performance degradation due to interblock interference (IBI). This paper proposes a blind-channel shortening method in which the equalizer parameter vector is formed by the noise subspace of the received signal correlation matrix so that the output power is maximized. The proposed method can not only shorten the effective channel impulse response to within the CP length but also maximize the output signal-to-interference-and-noise ratio while eliminating the IBI. We point out that the performance depends on the choice of a decision delay and propose a simple method for determining the appropriate delay. We propose both a batch algorithm and an adaptive algorithm and show by simulation that they are superior to the conventional algorithms.     

Detection and modification of confusing color combinations for red‐green dichromats to achieve a color universal design

Color‐vision deficiency is a relatively common genetic condition, which often leads to the obstruction of necessary information in colored images. It is important to minimize such inconvenient effects in communication using colored images from a universal design perspective. The universal design principle stipulates that all environments and products should be usable by all people, regardless of age, physical attributes, and ability. This article proposes a method to detect color combinations in a given image that would confuse color dichromats, and suggests a way in which to modify them to make the image easily distinguishable for both normal and dichromatic observers. Confusing color combinations were detected based on a color‐difference calculation using simulations of how the color would appear to dichromats. The confusing colors were then modified based on the minimization of an evaluation function, which was defined as the sum of the degree of confusion and the degree of color change from the original image. Several colored images obtained by the proposed method were compared with the originals by red–green dichromatic observers who judged them to be clearer, thereby confirming that the proposed method was effective for color rendering for universal design. © 2008 Wiley Periodicals, Inc. Col Res Appl, 33, 203–211, 2008     

Design and Circuit Analysis of Quasi-one Junction SQUID Comparators for Low Temperature Detector Array Read-out

In this study, we report on our simulation and experimental results for quasi-one junction SQUIDs (QOS) comparator targeted to be used in the front-end of the detector read-out circuits. The QOS is used as a 1-bit quantizer in the front-end of the read-out circuit. Their performance and reliability is very much depending on the circuit parameters of the QOSs. The main design parameters are the threshold level, gray zone width, and the chip-to-chip reproducibility over different fabrication batches. For some special applications, such as detector readout, the overall power consumption needs to be sufficient small. We measured threshold and gray zone counting each individual switching event for various bias and input current values and for different QOS designs. In addition, circuit simulations including thermal noise are used to explain the observed circuit behavior and to optimize design parameters.     

ZnSe/ZnMgSSe blue laser diode

The continuous wave operation of an ZnSe/ZnMgSSe laser diode was achieved for the first time at 77 K. Blue stimulated emission was observed at a wavelength of 447 nm and the threshold current density was 225 A/cm/sup 2/.<>     

A Bit-Error Rate Measurement and Error Analysis of Wireline Data Transmission using Current Source Model for Single Event Effect under Irradiation Environment

A high-speed wireline interfaces, e.g. LVDS (Low Voltage Differential Signaling), are widely used in the aerospace field for powerful computing in artificial satellites and aircraft [19]. This paper describes Bit Error Rate (BER) prediction methodology for wireline data transmission under irradiation environment at the design stage of data transmitter, which is useful in proactively determining if the design circuit meets the BER criteria of the target system. Using a custom-designed LVDS transmitter (TX) to enhance latch-up immunity [42], the relationship between transistor size and BER has been analyzed with focusing on Single Event Effect (SEE) as a cause of the bit error. The measurement was executed under ⁸⁴Kr¹⁷⁺ exposure of 322.0 MeV at various flux condition from 1?×?10³ to 5?×?10⁵ count/cm²/sec using cyclotron facility. For the analysis of the bit error, circuit simulation by SPICE was utilized with expressing the irradiation environment by a current source model. The current source model represents a single event strike into the circuit at drain and substrate junctions in bulk MOSFETs. For the construction of the current source model, a charge collection was simulated at the single particle strike with the creation of 3D Technology CAD (TCAD) models for the MOS devices of bulk transistor process technology. The simulation result of the charge correction was converted to a simple time-domain equation, and the single-event current source model was produced using the equation. The single-event current source was applied to SPICE simulation at bias current related circuits in the LVDS transmitter, then simulation results are carefully verified whether the output data is disturbed enough to cause bit errors on wireline data transmission. By the simulation, sensitive MOSFETs have been specified and a sum of the gate area for these MOSFETs has 29% better correlation than the normal evaluation index (sum of the drain area) by comparison to the actual BER measurement. Through the precise revelation of the sensitive area by SPICE simulation using the current model, it became possible to estimate BER under irradiation environment at the pre-fabrication design stage.

     

Application of CMP process monitor to Cu polishing

We have developed a chemical mechanical polishing (CMP) process monitor which uses polishing vibration. The monitor enables us to accurately detect the polishing end point in copper (Cu) polishing even when the process conditions such as initial film thickness, slurry flow and polishing rate are changed and when polishing multilayer film. Furthermore, the monitor is not only applicable to Cu polishing but also to planarizing polishing of an inter-level dielectric layer. The monitor can be also used to control the processes and the equipment because of its capability to detect abnormalities in the polishing conditions     

Upconversion pumped thulium-doped fluoride fiber amplifier andlaser operating at 1.47 μm

A 1.064-μm band upconversion pumped Tm³⁺-doped fluoride fiber amplifier and a laser both operating at 1.47 μm are investigated in detail. The two devices are based on the ³F ₄→³H₄ transition in a trivalent thulium ion, which is a self-terminating system. When pumped at 1.064 μm, the amplifier has a gain of over 10 dB from 1.44 to 1.51 μm and a low-noise characteristic. Also, the fiber laser generates a high-output power of over 100 mW with a slope efficiency of 59% at around 1.47 μm. These levels of performance will be important for optical communication systems     

Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Wafer Bonding

Ge/Si heterojunctions formed by wet wafer bonding were observed using transmission electron microscopy and energy-dispersive x-ray spectroscopy. For the samples annealed at 880°C, there was a transition layer at the heterointerface with modified regions in the Si and Ge extending 20 nm to 30 nm from the interface. In these modified regions, crystal defects were observed, and a large amount of Ge was detected on the Si side of the junction. For the samples annealed at 250°C or 350°C, the transition layers had an amorphous-like structure with a thickness of about 10 nm. No modified layer or enlargement of lattice spacing was observed.     

Improvement of Electrical Contact Between TE Material and Ni Electrode Interfaces by Application of a Buffer Layer

A single ??-structure thermoelectric (TE) module based on p-type NaCo₂O₄, n-type Mg₂Si, and Ni electrode was fabricated by the spark plasma sintering (SPS) method. The NaCo₂O₄ powder was synthesized by using a metal?Ccitric acid complex decomposition method. Bulk Mg₂Si prepared by melt quenching was ground into a powder and sieved to particle size of 75???m or less. To obtain a sintered body of NaCo₂O₄ or Mg₂Si, the powder was sintered using SPS. Pressed Ni powder or mixed powder consisting of Ni and SrRuO₃ powder was inserted between these materials and the Ni electrode in order to connect them, and electrical power was passed through the electrodes from the SPS equipment. The open-circuit voltage (V _OC) values of a single module in which TE materials were connected to the Ni electrodes by using pressed Ni powder was 82.7?mV, and the maximum output current (I _max) and maximum output power (P _max) were 212.4?mA and 6.65?mW at ??T?=?470?K, respectively. On the other hand, V _OC of a single module in which TE materials and an Ni electrode were connected with a mixed powder (Ni:SrRuO₃?=?6:4 volume fraction) was 109?mV, and I _max and P _max were 4034?mA and 109?mW at ??T?=?500?K, respectively. These results indicate that the resistance at the interface between the TE materials and the Ni electrode can be decreased and the output power can be increased by application of a buffer layer consisting of Ni and SrRuO₃.