High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping andInGaAs emitter contacts

The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×10⁸ h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology     

Coupling techniques in boundary-combined methods for solving elliptic problems with singularities

Three coupling strategies in matching the Ritz-Galerkin method and the finite element method are introduced for general elliptic equations, and useful numerical techniques are provided. Numerical experiments have been carried out for solving the typical, singular Motz problem, which shows that optimal convergence rates of numerical solutions can be achieved by using the combined methods and techniques provided in this paper.     

Structure and properties of polyimide‐bonded magnets processed from prepolymers based on diacetyl derivatives of aromatic diamines and dianhydrides

We report a novel method of polyimide (PI) synthesis from prepolymers based on dianhydrides and diacetyl derivatives of aromatic diamines that facilitate the preparation of a melt processable mixture at 300 ± 10°C of the prepolymer and magnetic Nd‐Fe‐B alloy to provide PI‐bonded magnets with enhanced properties. It is shown that chemical structure of the prepolymers strongly influences viscosity behavior via crystallization of the oligoimide in the melt, leading to formation of PI with rigid‐rod like structure. This structural ordering of the prepolymers based on diacetyl derivative of diamine used in this study, if not controlled, leads to exponential increase of melt viscosity with time, making it practically impossible to prepare melt processable mixture of the magnetic particles and the PI prepolymers at elevated temperatures. The results obtained demonstrate that appropriate dianhydrides and diacetyl derivatives of diamines that do not lead to crystallization of oligoimides in prepolymer mixture can be used under controlled processing conditions to prepare melt‐processable PI‐bonded magnets containing rigid‐rod like PI structure that significantly increases thermal stability of the magnets. The temperature dependencies of the magnetic properties of the PI‐bonded magnets under conditions that they are likely to encounter during their service life were found to be remarkably similar to that of commercial thermoplastic magnets such as injection‐molded nylon magnets. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 100: 478–485, 2006     

An adaptive XIGA with locally refined NURBS for modeling cracked composite FG Mindlin–Reissner plates

Engineering with Computers - This paper is devoted to numerical investigations on mechanical behavior of cracked composite functionally graded (FG) plates. We thus develop an efficient adaptive...     

Modeling of microstructure effects on the mechanical behavior of ultrafine-grained nickels processed by hot isostatic pressing

Bulk ultrafine-grained nickel specimens having grain sizes in the range of 0.25-5 μm were consolidated by hot isostatic pressing technique. The resulting microstructures were characterized by transmission electron microscopy and X-ray diffraction analysis. Compression tests were carried out at room temperature and at strain rate of 1.6×10⁻⁴ s⁻¹. It was found that the measured yield strength does not follow the Hall-Petch law as a consequence of the presence of oxide phase. Therefore, the use of micromechanics based model, which takes into account only the Hall-Petch relationship at grain level for predicting the grain sized effects on mechanical behavior of this kind of materials, is not accurate yet. In this study, a modification made to the generalized self-consistent model was proposed for studying both grain size and oxide phase dependence of ultrafine-grained materials behavior. Because of the novel modification, an optimization procedure with two steps was required to identify the parameters of micromechanical model. An acceptable agreement between experimental and numerical results was achieved. Moreover, the influence of texture on the yield strength and the application of the proposed model to the spark plasma sintering processed materials were also discussed.     

InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers

We describe a quasi-planar HBT process using a patterned implanted subcollector with a regrown MBE device layer. Using this process, we have demonstrated discrete SHBT with f/sub t/>250 GHz and DHBT with f/sub t/>230 GHz. The process eliminates the need to trade base resistance for extrinsic base/collector capacitance. Base/collector capacitance was reduced by a factor of 2 over the standard mesa device with a full overlap between the heavily doped base and subcollector regions. The low proportion of extrinsic base/collector capacitance enables further vertical scaling of the collector even in deep submicrometer emitters, thus allowing for higher current density operation. Demonstration ring oscillators fabricated with this process had excellent uniformity and yield with gate delay as low as 7 ps and power dissipation of 6 mW/CML gate. At lower bias current, the power delay product was as low as 20 fJ. To our knowledge, this is the first demonstration of high-performance HBTs and integrated circuits using a patterned implant on InP.     

Sidegating in a GaAs MBE-grown HFET structure

The sidegating effect in a MBE-grown HFET GaAs structure is considerable and persists to large distances. On the other hand, the leakage current is very low. A model that takes into account the unusual features of sidegating in this structure and is consistent with other studies of similar structures is proposed. On the basis of the model, a change in the isolation process was implemented. This resulted in a large reduction of the sidegating effect and confirmed the main features of the model     

A cross-layer analysis of TCP/link adaptation technologies over free-space optical links with Markov error model

This paper presents a comprehensive cross-layer framework on the performance of transmission control protocol (TCP) over a free-space optical (FSO) link, which employs automatic repeat request (ARQ) and adaptive modulation and coding (AMC) schemes. Not similar to conventional works in the literature of FSO, we conduct a Markov error model to accurately capture effects of burst errors caused by atmospheric turbulence on cross-layer operations. From the framework, we quantify the impacts of different parameters/settings of ARQ, AMC, and the FSO link on TCP throughput performance. We also discuss several optimization aspects for TCP performance.