Unified reliability estimation and management of NoC based chip multiprocessors

We present a new architecture level unified reliability evaluation methodology for chip multiprocessors (CMPs). The proposed reliability estimation (REST) is based on a Monte Carlo algorithm. What distinguishes REST from the previous work is that both the computational and communication components are considered in a unified manner to compute the reliability of the CMP. We utilize REST tool to develop a new dynamic reliability management (DRM) scheme to address time-dependent dielectric breakdown and negative-bias temperature instability aging mechanisms in network-on-chip (NoC) based CMPs. Designed as a control loop, the proposed DRM scheme uses an effective neural network based reliability estimation module. The neural-network predictor is trained using the REST tool. We investigate how system’s lifetime changes when the NoC as the communication unit of the CMP is considered or not during the reliability evaluation process and find that differences can be as high as 60%. Full-system based simulations using a customized GEM5 simulator show that reliability can be improved by up to 52% using the proposed DRM scheme in a best-effort scenario with 2–9% performance penalty (using a user set target lifetime of 7 years) over the case when no DRM is employed.     

W-band waveguide photomixer using a uni-traveling-carrier photodiode with 2-mW output

Developed a W-band (75-110 GHz) waveguide photomixer with a uni-traveling carrier photodiode, which can be driven by two 1.5-/spl mu/m lasers. It generates an output power of 2.2/spl plusmn/0.2 mW at 100 GHz with a laser power of less than 100 mW, and its relative power variation is as small as 3 dB across the entire frequency range of the W-band. A 100-GHz superconductor-insulator-superconductor receiver driven by this photomixer shows the same noise temperature around 26 K as that driven by a conventional Gunn oscillator.     

Experimental studies of bistatic scattering from two-dimensionalconducting random rough surfaces

Despite the recent development of analytical and numerical techniques for problems of scattering from two-dimensional rough surfaces, very few experimental studies were available for verification. The authors present the results of millimeter-wave experiments on scattering from two-dimensional conducting random rough surfaces with Gaussian surface roughness statistics. Machine-fabricated rough surfaces with controlled roughness statistics were examined. Special attention was paid to surfaces with large rms slopes (ranging from 0.35 to 1.00) for which enhanced backscattering is expected to take place. Experimentally, such enhancement was indeed observed in both the copolarized and cross-polarized returns. In addition, it was noticed that at moderate angles of incidence, the scattering profile as a function of observation angle is fairly independent of the incident polarization and operating frequency. This independence justifies the use of the geometric optics approximation embodied in the Kirchhoff formulation for surfaces with large surface radius of curvature. When compared with the experimental data, this analytical technique demonstrates good agreement with the experimental data     

Characterization of plasma membrane H+-ATPase from salt-tolerant yeast Candida versatilis

Plasma membrane was isolated from the salt-tolerant yeast Candida versatilis and the ATPase in plasma membrane was characterized. The ATPase was a typical H⁺-ATPase with similar properties to the Saccharomyces cerevisiae and Zygosaccharomyces rouxii enzymes. It was reacted with antibody (IgG) raised against S. cerevisiae plasma membrane H⁺-ATPase. The ATPase activity was not changed by adding NaCl and KCl to the assay solutions, but was increased by NH, especially by ammonium sulfate. In vivo stimulation of ATPase activity was observed by the addition of NaCl into the culture medium, as observed in Z. rouxii. No in vivo activation of H⁺-ATPase by glucose metabolism was observed in C. versatilis cells and the activity was independent of the growth phase, like Z. rouxii and unlike S. cerevisiae cells.     

Schottky barrier heights of contact metals to p-type ZnSe

Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage (J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C⁻²-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level lower than 0.4 eV and/or increase of doping concentrations to a level higher than 10²⁰ cm⁻³ are essential to obtain an ohmic contact with contact resistivity of around 10⁻³ Ω·cm².     

A 7 ns 1 Mb BiCMOS ECL SRAM with shift redundancy

A 7-Mb BiCMOS ECL (emitter coupled logic) SRAM was fabricated in a 0.8 μm BiCMOS process. An improved buffer with a high-level output of nearly V_CC is adopted to eliminate the DC current in the level converter circuit, and the PMOS transistor has a wide operating margin in the level converter. The configurable bit organization is realized by using a sense-amplifier switch circuit with no access degradation. A wired-OR demultiplexer for the ×1 output, having the same critical path as the ×4 output circuit, allows for the same access time between the two modes. The ×1 or ×4 mode is electrically selected by the external signal. A simplified programming redundancy technology, shift redundancy, is utilized. Address programming is performed by cutting only one fuse in the shift redundancy. The RAM operates at the ECL-10K level with an access time of 7 ns. and the power dissipation at 50 MHz is 600 mW for the × mode     

Changes in the surface structure of the hamster sperm head associated with maturation, in vitro capacitation and acrosome reaction: an atomic force microscopic study

Structural changes of the hamster sperm head surface associated with maturation, capacitation and acrosome reaction were examined by atomic force microscopy. Spermatozoa were taken from the initial segment and distal cauda of the epididymis, washed in a modified Tyrode solution and fixed by glutaraldehyde. Some sperms taken from distal cauda epididymides were incubated with the capacitation medium before fixation. All samples were attached on the glass slide, dried in a critical point drier and observed by atomic force microscopy. The sperm head surface was characterized by the presence of numerous round particles, approximately 40 and 60 nm in diameter. The distribution and density of these particles on the sperm surface were significantly different between the equatorial segment and post-acrosomal region in each sperm, and also between sperms under different conditions. The surface of the equatorial segment was rather smooth in sperms from the initial segment of the epididymis, but had many large (60 nm) particles in sperms from the distal cauda epididymides, suggesting that the large particles were glycoproteins which were secreted from the epididymis and attached to the sperm surface during maturation. The number of these particles dramatically decreased in both capacitated acrosome-unreacted and acrosome-reacted sperms. This finding supports the idea that glycoproteins are removed from the sperm surface during capacitation. Atomic force microscopic studies of the sperm head surface are expected to be used for future molecular studies on the cell surface components involved in the mechanism of maturation, capacitation and acrosome reaction.     

A channel-erasing 1.8-V-only 32-Mb NOR flash EEPROM with a bitlinedirect sensing scheme

A 1.8-V-only 32-Mb NOR flash EEPROM has been developed based on the 0.25-μm triple-well double-metal CMOS process. A channel-erasing scheme has been implemented to realize a cell size of 0.49 μm² , the smallest yet reported for 0.25-μm CMOS technology. A block decoder circuit with a novel erase-reset sequence has been designed for the channel-erasing operation. A bitline direct sensing scheme and a wordline boosted voltage pooling method have been developed to obtain high-speed reading operation at low voltage. An access time of 90 ns at 1.8 V has been realized     

A high fill factor and progressive scan PtSi Schottky-barrier IR-CCD image sensor using new wiring technology

A back surface illuminated 130/spl times/130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using new wiring technology, referred to as CLOSE Wiring, CLOSE Wiring, designed to effectively utilize the space over the SB photodiodes, brings about flexibility in clock line designing, high fill factor, and large charge handling capability in a vertical CCD (VCCD). This image sensor uses a progressive scanned interline-scheme, and has a 64.4% fill factor in a 30 /spl mu/m/spl times/30 /spl mu/m pixel, a 3.9 mm/spl times/3.9 mm image area, and a 5.5 mm/spl times/5.5 mm chip size. The charge handling capability for the 3.3 /spl mu/m wide VCCD achieves 9.8/spl times/10/sup 5/ electrons, The noise equivalent temperature difference obtained was 0.099 K for operation at 120 frames/sec with a 50 mm f/1.3 lens.<>