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排序方式: 共有1736条查询结果,搜索用时 15 毫秒
1.
Xin Sun Qiang Lu Moroz V. Takeuchi H. Gebara G. Wetzel J. Shuji Ikeda Changhwan Shin Tsu-Jae King Liu 《Electron Device Letters, IEEE》2008,29(5):491-493
A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control). 相似文献
2.
Akira Watanabe Yoshimitsu Takeuchi Goji Saeki 《Journal of the American Ceramic Society》1985,68(11):308-C
The length of potassium titanate fibers produced by several conventional methods averages 50 μm, with a maximum of 100 μm. Extremely long fibers (most >1000 μm long) were obtained by calcination in N2 gas flowing at 5.2×10-4 m/s. 相似文献
3.
A new gram-positive, nonmotile coccus is described. Strains IFO 12422T (T = type strain) and IFO 15385 in the Institute for Fermentation, Osaka, culture collection, which were isolated from soil and water, respectively, have the following chemotaxonomic characteristics: menaquinone MK-9(H4); G + C content of DNA of 67 mol%; and LL-diaminopimelic acid, alanine, glycine, and glutamic acid in a molar ratio of ca. 1:2:1:1 (type A3 gamma). Mycolic acids are not present. The taxonomic characteristics of these organisms are different from those of previously described gram-positive, high-G + C-content cocci. The partial 16S rRNA sequence indicated that IFO 12422T represents a distinct line of descent among gram-positive bacteria with a high G + C content. The name Luteococcus japonicus gen. nov., sp. nov. is proposed. The type strain is strain IFO 12422. 相似文献
4.
To help in clarifying the relationship between the time lag and attenuation of nitrogen (N) loads generated in agricultural catchments, long-term trends in activities that generate N loads and in environmental N loads were estimated in catchments in Japan and Korea dominated by non-point-source emissions. Our approach used statistical data and geographical information system software to analyze pollutant loads. The method was successful in both countries because of the availability of well-developed statistics, geographical information, and weather and water quality monitoring systems, and the accumulation of research data concerning the generation of N loads and the fate of N in soils. Comparison of environmental loads with the loads observed in river water at the outlet of each catchment revealed that: (1) the effect of changes in the environmental load in a catchment appeared almost immediately in the river water quality in Korea, but did not appear clearly even 10 years later in Japan; and (2) the strength of the attenuation appeared to be much lower in Korea than in Japan. These findings suggest that regional characteristics play important roles in the sensitivity of water quality to load-generating activities. 相似文献
5.
Satoshi Takeuchi Ryo Sugihara 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》1998,410(3):104-508
The longitudinal electric field of single and double Gaussian laser beams are used to accelerate electrons. The longitudinal field of the single beam is concentrated on the axis and is favourable for acceleration. A set of two beams is considered. Beams run parallel, collinearly, overlap partially and have a phase difference iπ in between. As a result, the transverse components of fields cancel each other while the longitudinal components are double-fold. In both schemes, the electrons are accelerated in lengths of the Rayleigh range, which is common to the plasma-based accelerators. 相似文献
6.
Y. Nakamura Ichiro Tanaka N. Takeuchi S. Koshiba H. Sakaki 《Journal of Electronic Materials》1998,27(11):1240-1243
We studied morphology of GaAs surfaces and the transport properties of two-dimensional electron gas (2DEG) on vicinal (111)B
planes. Multi-atomic steps (MASs) are found on the vicinal (111)B facet grown by molecular beam epitaxy, which will affect
electron transport on the facet. We also studied how the morphology of GaAs epilayers on vicinal (111)B substrates depends
on growth conditions, especially on the As4 flux. The uniformity of MASs on the substrates have been improved and smooth surfaces were obtained when the GaAs was grown
with high As4 flux, providing step periodicity of 20 nm. The channel resistance of the 2DEG perpendicular to the MASs is reduced drastically
with this smooth morphology. These findings are valuable not only for fabricating quantum devices on the (111)B facets but
also those on the vicinal (111)B substrates. 相似文献
7.
Wakabayashi H. Ueki M. Narihiro M. Fukai T. Ikezawa N. Matsuda T. Yoshida K. Takeuchi K. Ochiai Y. Mogami T. Kunio T. 《Electron Devices, IEEE Transactions on》2002,49(1):89-95
Sub-50-nm CMOS devices are investigated using steep halo and shallow source/drain extensions. By using a high-ramp-rate spike annealing (HRR-SA) process and high-dose halo, 45-nm CMOS devices are fabricated with drive currents of 650 and 300 μA/μm for an off current of less than 10 nA/μm at 1.2 V with Toxinv =2.5 nm. For an off current less than 300 nA/μm, 33-nm pMOSFETs have a high drive current of 400 uA/μm. Short-channel effect and reverse short-channel effect are suppressed simultaneously by using the HRR-SA process to activate a source/drain extension (SDE) after forming a deep source/drain (S/D). This process sequence is defined as a reverse-order S/D (R-S/D) formation. By using this formation, 24-nm nMOSFETs are achieved with a high drive current of 800 μA/μm for an off current of less than 300 μA/μm at 1.2 V. This high drive current might be a result of a steep halo structure reducing the spreading resistance of source/drain extensions 相似文献
8.
T Yoshida M Satoh Y Nakagaito H Kuno M Takeuchi 《Canadian Metallurgical Quarterly》1993,76(1):147-150
The effects of various cytokines on survival and differentiation of an astrocyte progenitor cell line (AP-16) were examined. Epidermal growth factor (EGF) deprivation caused death of AP-16 cells by apoptosis. Transforming growth factor-alpha (TGF-alpha) and basic fibroblast growth factor (bFGF) prevented the apoptosis occurring in the absence of EGF. Leukemia inhibitory factor (LIF) and ciliary neurotrophic factor (CNTF) induced glial fibrillary acidic protein (GFAP) and decreased A2B5 antigen in AP-16 cells, indicating that these cytokines induced AP-16 cells to differentiate into astrocytes. 相似文献
9.
A simple, accurate and universal relationship between MOSFET drain current in saturation, effective channel length, and gate drive has been found. It can be explained by a simple analytical model, whose validity is supported by numerical simulation. The model shows that the length of a velocity saturated region is a crucial parameter for describing MOSFET performance, particularly for short channel devices. The shrinkage of the length deteriorates the merit of channel length scaling 相似文献
10.