Harvesting small trees and forest residues

Eight countries collaborated and shared technical information on the harvesting of small trees and forest residues in a three year program. Proceedings and reports from workshops and reviews are summarized in a review of activities and harvesting systems of the participating countries. Four databases were developed for harvesting and transportation of these materials.     

顾客不嫌信息多

很多公司的在线销售增长情况不理想,领导者在失望之余认为原因是在线客户的忠诚度不高,消费意愿也不强。殊不知,在线销售不如人意的真实原因并非如此,而是公司没能充分发掘客户最为看重的价值点——参与感。     

Sequential Monte Carlo in reachability heuristics for probabilistic planning

Some of the current best conformant probabilistic planners focus on finding a fixed length plan with maximal probability. While these approaches can find optimal solutions, they often do not scale for large problems or plan lengths. As has been shown in classical planning, heuristic search outperforms bounded length search (especially when an appropriate plan length is not given a priori). The problem with applying heuristic search in probabilistic planning is that effective heuristics are as yet lacking.In this work, we apply heuristic search to conformant probabilistic planning by adapting planning graph heuristics developed for non-deterministic planning. We evaluate a straight-forward application of these planning graph techniques, which amounts to exactly computing a distribution over many relaxed planning graphs (one planning graph for each joint outcome of uncertain actions at each time step). Computing this distribution is costly, so we apply Sequential Monte Carlo (SMC) to approximate it. One important issue that we explore in this work is how to automatically determine the number of samples required for effective heuristic computation. We empirically demonstrate on several domains how our efficient, but sometimes suboptimal, approach enables our planner to solve much larger problems than an existing optimal bounded length probabilistic planner and still find reasonable quality solutions.     

Broad-area InAs/GaAs quantum dot lasers incorporating intermixed passive waveguide

InAs/GaAs quantum dot lasers incorporating passive waveguide created by post-growth intermixing processing have been studied. Emission wavelength of the passive section shows relative blueshift as high as 135 nm with respect to the emission wavelength of the active section. Intrinsic losses in the section formed by the intermixing are very small. Broad-area lasers with 100 mum stripe width incorporating intermixed section have demonstrated improvements in far-field pattern under both pulsed and continuous wave pumping current     

High performance laser with nanopatterned active layer by selective area epitaxy

Lasers containing a nanopatterned active layer demonstrating excellent threshold characteristics are presented. The nanopatterned active layer is fabricated using high-resolution electron beam lithography and selective-area metal organic chemical vapour deposition crystal growth. Results demonstrating an order of magnitude improvement over previous results are reported.     

Monolithic fabrication of 2 × 2 crosspoint switches inInGaAs-InAlGaAs multiple quantum wells using quantum-well intermixing

In this letter, we report the fabrication of 2 × 2 crosspoint switches, which monolithically integrate passive waveguides, electro-absorption modulators and optical amplifiers onto one chip using sputtered SiO₂ quantum-well intermixing technique. The switches have low insertion loss to be about 4-5 dB and extinction ratios up to 26 dB     

Reprocessing of thermally oxidized aluminum arsenide (AlAs) in epitaxial multilayers without delamination

Annealing or processing of AlAs that has been subjected to a wet thermal oxidation process can result in severe delamination of material at the oxidation front. This paper reports a procedure for preventing this delamination and presents a possible cause for the delamination.     

Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP

Impurity induced disordering of GaInAs quantum well structures with barriers of AlGaInAs and of GaInAsP has been investigated using boron and fluorine. The impurities were introduced by ion implantation followed by thermal annealing. Annealing unimplanted P-based quaternary material at temperatures greater than 500° C caused a blue shift of the exciton peak. At annealing temperatures greater than 650° C red shifts in the exciton peak of unimplanted Al-based quaternary material were observed. Boron implantation caused small blue shifts of the exciton peak in both material systems at low annealing temperatures. Much larger blue shifts were observed in the fluorine implanted samples.     

Large modulation depth, single-moded quantum well waveguide modulator operating around 1.57 mu m

The performance of long wavelength single-mode waveguide modulators suitable for monolithic integration with a quantum well laser is reported. The device operated between 1.560 mu m and 1.570 mu m. The guiding layer was formed by a 0.27 mu m quaternary layer at the centre of which were four 50 AA In/sub 0.53/Ga/sub 0.47/As quantum wells separated by 100 AA InP barrier layers. Lateral confinement was obtained by etching ridges in the top InP contact layer. For devices of 500 mu m length, a modulation depth of 19 dB was obtained at a wavelength of 1.568 mu m with a reverse bias voltage of only 3 V and an internal loss of 2.5 dB.<>     

飞思卡尔触摸传感器实现新的应用

概述 有了接近式触摸传感器,按字面意思理解就是没有按压操作了.因为它们是触摸式按钮,而不是按压式按钮.在任何情况下,接近式触摸传感器都没有移动部件.没有弹簧,没有敲击,没有跳动的键帽.而且,它们可以满足任何空间要求.没有任何突出的东西,因此开发人员可以将它们直接安装在设计轮廓上.