Efficiency of repeated batch penicillin fermentation using two fermentors. Computer simulation and optimisation

Repeated batch operation using two fermentors (RBTF) to penicillin fermentation was demonstrated by computer simulation to improve productivity. Three operation modes were compared: chemostat, repeated batch operation using a single fermentor (RBSF) and RBTF; in each case account was made of the lag period before growth. The simulated fermentor performances were assessed on the basis of the penicillin productivity and concentration; the simulation was based on published batch fermentation data. It was shown that RBTF was superior to RBSF and chemostat. The advantage of RBTF increased as the lag period became greater.     

Preferential Oxidation of CO in H2-Rich Gas at Low Temperatures over Au Nanoparticles Supported on Metal Oxides

We investigated Au catalysts supported on TiO₂, Fe₂O₃, and ZnO for their preferential oxidation of CO in a H₂-rich atmosphere. Both full conversion and selectivity were achieved over Au/Fe₂O₃ and Au/ZnO around room temperature, but at higher temperatures the CO conversion was suppressed due to competition between CO and H₂.     

One-step formation of ethyl methyl ketone from 1-butene and water on ultrastable Y-type zeolite catalyst

Proton exchanged ultrastable Y-type zeolite with silica/alumina = 40 showed a pronounced catalytic activity for the formation of ethyl methyl ketone directly from 1-butene and water. The formation rate of ethyl methyl ketone was much higher than those on MoO₃-based catalysts in the oxidation of 1-butene by oxygen. It was suggested that the basic site necessary for the formation of ethyl ketone directly from 1-butene and water would be the pentacoordinated Al.     

Bone Tissue Engineering in Rat Calvarial Defects Using Induced Bone-like Tissue by rhBMPs from Immature Muscular Tissues In Vitro

This study aimed to induce bone-like tissue from immature muscular tissue (IMT) in vitro using commercially available recombinant human bone morphogenetic protein (rhBMP)-2, rhBMP-4, and rhBMP-7, and then implanting this tissue into a calvarial defect in rats to assess healing. IMTs were extracted from 20-day-old Sprague-Dawley (SD) fetal rats, placed on expanded polytetrafluoroethylene (ePTFE) with 10 ng/μL each of rhBMP-2, BMP-4, and BMP-7, and cultured for two weeks. The specimens were implanted into calvarial defects in 3-week-old SD rats for up to three weeks. Relatively strong radiopacity was observed on micro-CT two weeks after culture, and bone-like tissue, comprising osteoblastic cells and osteoids, was partially observed by H&E staining. Calcium, phosphorus, and oxygen were detected in the extracellular matrix using an electron probe micro analyzer, and X-ray diffraction patterns and Fourier transform infrared spectroscopy spectra of the specimen were found to have typical apatite crystal peaks and spectra, respectively. Furthermore, partial strong radiopacity and ossification were confirmed one week after implantation, and a dominant novel bone was observed after two weeks in the defect site. Thus, rhBMP-2, BMP-4, and BMP-7 differentiated IMT into bone-like tissue in vitro, and this induced bone-like tissue has ossification potential and promotes the healing of calvarial defects. Our results suggest that IMT is an effective tissue source for bone tissue engineering.     

Highly Reproducible and Regulated Conductance Quantization in a Polymer‐Based Atomic Switch

A detailed understanding of the conductance quantization and resistive switching phenomena in redox‐based memories is crucial for realizing atomic‐scale memory devices and for finding the adequate design principles on which they can be based. Here, the emergence of quantized conductance states and their correlation with resistive switching characteristics in polymer‐based atomic switches are investigated using combinations of current–voltage measurements and first‐principles density functional theory (DFT) simulations. Various conductance states, including integer and half‐integer multiples of a single atomic point contact and fractional conductance variations, are observed in an Ag/polyethylene oxide/Pt device under sweeping of bias voltage. Moreover, highly controllable and reproducible quantized conductance behaviors by tuning the voltage sweep rate and the sweep voltage range, suggesting well‐controlled formation of the atomic point contact, are demonstrated. The device also exhibits longer retention times for higher conductance states. The DFT simulations reveal the transmission eigenstate of geometrically optimized atomic point contact structures and the impact of the atomic configurations and structural stability on the conductance state, which also explains their resistive switching behaviors. The well‐defined, multiple quantized conductance states observed in these polymer‐based atomic switches show promise for the development of new multilevel memory devices.     

Growth of AgGaTe2 and AgAlTe2 Layers for Novel Photovoltaic Materials

AgGaTe₂ and AgAlTe₂ layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe₂ and AgAlTe₂ by x-ray diffraction (XRD). The AgAlTe₂ layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe₂ layer was different from that of the AgAlTe₂ layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe₂ layers had an epitaxial relationship with the a-plane sapphire substrates.     

Annealing effects of a high-quality ZnTe substrate

The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate (100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EX^L and EX^U) at 2.382 eV and 2.381 eV, respectively, were clearly observed. This meant that this substrate was high quality. The intensity of a bound exciton peak (2.375 eV), which is caused by a Zn vacancy, of a neutral acceptor decreased with an increase of the Zn vapor pressures.