Electrical passivation in hydrogen plasma exposed GaN

Lightly p-doped (3×10¹⁷ cm^-3) GaN grown on GaAs substrates by metal organic molecular beam epitaxy (MOMBE) shows deactivation of the residual acceptors on exposure to a microwave (2.45 GHz) hydrogen plasma at 250°C. Subsequent annealing to 350°C produces further dopant passivation, while higher temperatures (450°C) restore the initial conductivity. These results suggest that hydrogen carrier gases should be avoided during vapour phase growth of III-V nitrides     

坑道用水下堵漏剂的研制

坑道水下堵漏剂的研制包括F－1、F－2和F－3型。其中F－1是一种有机堵漏剂，它可以在水中固化；F－2是一种无机防水堵漏剂，施工方便；F－3是速凝型，它可在瞬间固化，能对坑道的涌水口进行堵漏。     

Magnetic Resonance Visualisation of Flow and Pore Structure in Packed Beds with Low Aspect Ratio

Different NMR techniques were combined to obtain the structure and velocity information for a systematic investigation of fixed beds with low aspect ratio (tube diameter to particle diamter, d_t/d_p) in the range 1.4 to 32. The structure of the void space was determined for a variety of packed beds of glass beads or regular and irregular porous pellets by magnetic resonance imaging (MRI). Based on the images the radial distribution of the voids within the bed was obtained. Ordering effects were found even for non‐spherical and polydisperse particles, and a maximum of the fluid density near the tube wall was confirmed for all pellet geometries and sizes. By combining MRI with velocity encoding, velocity profiles and distributions of flow velocity components of a single fluid phase through packed beds have been acquired. The radial velocity distribution follows an oscillatory pattern which largely reflects the ordering of the particles, which can be accessed from the density distribution of the interparticle fluid. Maximum velocities of up to four times the average value were found to occur near the tube wall. This wall effect was observed for all but the smallest particles, where the aspect ratio was d_t/d_p = 32. Moreover, a visualisation of flow pattern in the presence of packed particles was achieved by using a tagging technique, and the stationary flow field could be identified for an experimental time of several hours.     

飞行人员骨密度与内分泌调节关系的探讨

对37名骨密度(BD)低下的飞行员(实验组)和BD正常的48名飞行员、100名地面人员(正常对照组)进行了BD和血清TT_3、TT_4、TSH IRMA、CT、PTH、E_2和T放射免疫测定。结果显示,实验组BD均值明显低于对照组(p<0.01),血清TT_3、TT_4、CT、E_2(女性)和T(男性)均值与对照组比较,大多数年龄存在着显著或非常显著差异(p<0.05或p<0.01)。同时对飞行人员BD与几种内分泌激素关系进行了探讨。     

激光光束质量因子的研究进展

本文详细分析了各种光场下光束质量M2因子。在不同的场中,A.E.Siegman当初所定义的M2因子,已经有了很大的变化,因而M2因子的特性也与当初不同,不仅M2因子可以大于等于1,而且可以小于1,甚至小于0。其反映的物理意义,也从经典场中的衍射极限倍数,变化为非经典场中的准直性量度以及对空间相干性的某些反映。此外还列举并分析了几种特殊的光束质量因子,最后讨论了M2因子应用的问题并指出了其局限性。     

Effects of Sc2O3 and MgO passivation layerson the output power of AlGaN/GaN HEMTs

The low temperature (100°C) deposition of Sc₂O₃ or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz, there was a better than 3 dB increase in output power of 0.5×100 μm² HEMTs for both types of oxide passivation layers. Both Sc₂ O₃ and MgO produced larger output power increases at 4 GHz than conventional plasma-enhanced chemical vapor deposited (PECVD) SiN_x passivation which typically showed ⩽2 dB increase on the same types of devices. The HEMT gain also in general remained linear over a wider input power range with the Sc₂O₃ or MgO passivation. These films appear promising for reducing the effects of surface states on the DC and RF performance of AlGaN/GaN HEMTs     

共晶自生复合材料的晶形转变

自生复合材料的晶形转变受到成分过冷与曲面过冷两个因素的控制.非金属相具有较大的熔化熵且易形成小平面是改变领先相的因素,而领先相的改变则可能是晶形转变的根本原因.