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A locomotive cabin adsorption air‐conditioner has been equipped in #DF4B‐2369 locomotive; and has been successfully run for 2 years. It is powered by waste heat from the exhaust of the diesel engine. The influence on heat transfer is described by the equivalent heat transfer coefficient or thermal resistance of components inside the adsorber. The variation of adsorption capacity is expressed by a non‐equilibrium adsorption function. The dynamic heat transfer process of adsorption air‐conditioning system is treated with the lumped parameter method. Some typical running experimental results are present. The diesel engine rotating speed and locomotive speed influenced on the refrigeration system are discussed. The maximum mean refrigeration power is regarded as an objective function. Based on experiments and theoretical analysis, the running characteristics of the air‐conditioning system are optimized. Some techniques of performance improvement are suggested as well. Copyright © 2006 John Wiley & Sons, Ltd. 相似文献
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Jeong-Soo Lee Yang-Kyu Choi Daewon Ha Balasubramanian S. Tsu-Jae King Bokor J. 《Electron Device Letters, IEEE》2003,24(3):186-188
The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin. 相似文献
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第三节 常见氧化物膜目前研究最多的氧化物膜可谓二氧化硅和二氧化钛膜 ,这两种薄膜也是接受呈色离子、制备彩色镀膜常用的基体膜 ,所以 ,有必要将它们单独列出 ,加以讨论。1 二氧化钛膜在所有高折射率材料中 ,由钛的化合物制备的氧化物膜具有特殊的实际意义。因此 ,对二氧化 相似文献
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对在实际组网中选择合理的ASON架构和保护方式作了相应分析,并为搭建可向ASON平滑演进的传统网络时需注意的问题提供了参考意见, 相似文献
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Chel-Jong Choi Tae-Yeon Seong Key-Min Lee Joo-Hyoung Lee Young-Jin Park Hi-Deok Lee 《Electron Device Letters, IEEE》2002,23(4):188-190
The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions 相似文献
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We propose and evaluate a medium-access control (MAC) protocol for synchronous cellular packet direct-sequence code-division multiple-access (DS/CDMA). The protocol is designed for handling a variety of multimedia traffic types in an integrated wireless-access network (IWAN). For instance, the protocol is suited for carrying multiple traffic types of different priorities. An analytical model for the equilibrium state has been developed for the proposed protocol. A comparative evaluation of the protocol is done for three different radio frequency bandwidths currently under consideration for personal communication services (PCS), i.e., 1.25 MHz, 5 MHz, and 10 MHz. Our results demonstrate that the proposed protocol is both robust and flexible for the intended IWAN applications. It offers a significant multiplexing gain as the bandwidth increases 相似文献