Theory and design of a tapered line distributed photodetector

We present the theory and design of a tapered line distributed photodetector (TLDP). In the previously demonstrated velocity-matched distributed photodetector (VMDP), high electrical bandwidth is achieved by proper termination in the input end to absorb reverse traveling waves, sacrificing one-half of the quantum efficiency. By utilizing the tapered line structure and phase matching between optical waves and microwaves in our analyzed structure, a traveling-wave photodetector is more realizable and ultrahigh bandwidth can be attained due to removal of the extra input dummy load that sacrifices one-half of the total quantum efficiency. To investigate the advantages of TLDP over VMDP, we calculate their electrical bandwidth performances by using an analytic photodistributed current model. We adopted low-temperature-grown (LTG) GaAs-based metal-semiconductor-metal (MSM) traveling-wave photodetectors as example unit active devices in the analytic bandwidth calculation for their high-speed and high-power performances. Both VMDP and TLDP in our simulation are assumed to be transferred onto glass substrates, which would achieve high microwave velocity/impedance and make radiation loss negligible. The simulated bandwidth of a properly designed LTG GaAs MSM TLDP is /spl sim/325 GHz, which is higher than the simulated bandwidth of the LTG GaAs MSM VMDP with an open-circuit input end (/spl sim/240 GHz) and is almost comparable to the simulated bandwidth of an input-terminated LTG GaAs MSM VMDP (/spl sim/330 GHz). This proposed method can be applied to the design of high-bandwidth distributed photodetectors for radio-frequency photonic systems and optoelectronic generation of high-power microwaves and millimeter waves.     

用小尺寸R－CT试样研究核压力容器钢断裂韧性及与Charpy试样的比较

提出了一种用双边带深侧槽的小尺寸圆形紧凑拉伸试样评定核压力容器（ＲＰＶ）钢断裂韧性的单试作试验方法，给出了用该方法测定的两个厂家生产的核压力容器用Ａ５０８ＣＬ３钢的断裂韧性参数，还与Ｃｈａｒｐｙ试样的试验结果及大尺寸标准试样的试验结果进行了比较。研究结果表明：用双边带深侧槽的小尺寸Ｒ－ＣＴ试样测得的断裂韧性值比相同恻槽深度预制疲劳裂纹Ｃｈａｒｐｙ试样的测试值更接近有效断裂韧性值，所以，用于核压力容器断裂韧性的监测是可行的。     

各国核电厂场外应急计划的比较

本文分析和比较了各国核电厂的应急计划,特别是场外应急的干予水平和应急计划区,讨论了我国干予水平、核电厂应急计划区和香港核应急计划几个实际问题。     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

A three-dimensional non-epitaxial atomistic growth model for thin-film deposition: effect of surface mobility

The effect of the atomic mobility on a film surface has been studied by using a three-dimensional atomistic thin-film deposition model which simulates three-dimensional thin-film images, surface profiles and cross-sectional area pictures. In addition, quantitative results of surface RMS roughness, average film thickness, atomic coordination number and its distribution, and solid fraction of the deposited thin films, were obtained from the simulations. When the film surface mobility increased from 0.3 to 3.0, RMS roughness decreased from 6.5 to 1.1, solid fraction increased from 0.27 to 0.56 and average film thickness decreased from 40 to 28, due to the reduction of the voids within the film. The full-width half magnitude of the atomic coordination distribution became narrower indicating the increased degree of crystallization. With increase in surface mobility crossing the boundary to 1.5, the film evolved from a porous or loose columnar structure with voids, to a densely packed fibrous grain structure which can be categorized by the zone structure models.     

转移法色交换

将图Ｇ的着色由一种变为中一种，通常用Ｋｅｍｐｅ法以交换。但是，对于某些情况，用此法无效。针对这个问题，本文提出了一种转移法色交换，它适用于平面图着色，方法直观，清晰且有效。     

Process and design analysis for ultrafine-pitched wiresweep elimination in advanced copper heat spreader BGA package

The semiconductor device trend for increasing functionalities and performances yet with smaller overall feature sizes presents escalating obstacles to the decreasing form factor along with demanding thermal carrying capability required at the package level. To confront this compounding issue, ultrafine-pitch wirebond interconnect coupled with thermally enhanced copper heat spreader attached to the package are introduced. However, the additional copper heat spreader thickness introduced within the package challenges the design of the package's wire, its loop height, and the molding process control to prevent wire sweeping occurrences. This study investigates the impact of different ultrafine pitched wire types, wire loop designs, copper heat spreader structures, and mold material types on eliminating device short from occurring due to the wire sweeping phenomena. A full factorial experiment is performed using an active silicon device packaged in a thermally enhanced ball grid array (BGA) test vehicle. In addition, test characterization is carried out using x-ray and multiinsertions hot/cold continuity tests. Then, a detailed failure analysis is performed by package decapsulation and scanning electron microscopy/energy-dispersive x-ray (SEM/EDX) to confirm the experimental findings. In conclusion, the study finds that for an ultrafine-pitched thermally enhanced BGA package, wire type is insignificant to reduce wire shorting occurrences. However, mold material and copper heat spreader structure using an optimized wire loop design are significant factors in eliminating wiresweep shorting phenomena. This study concludes with a wirebond interconnect and heat slug design recommended along with an improved process parameters and assembly material sets found from the experiment.