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1.
D. A. Mirzaev N. I. Vorob’ev O. K. Tokovi D. V. Shaburov E. A. Fominykh 《Russian Metallurgy (Metally)》2006,(1):38-41
The solutions to a differential equation for the problem of heating of a cylinder in a medium with a fixed temperature are used to obtain equations for estimating the change in the hydrogen concentration in forgings from data on the hydrogen concentration at the cylinder axis or on the average bulk hydrogen concentration. Similar equations are also obtained for forgings having square cross sections. The calculation demonstrates that, for the case of a twofold decrease in the hydrogen concentration in a forging, the calculated times of annealing of a cylindrical forging differ by three times. 相似文献
2.
P. B. Lovyrev A. I. Lavrov V. A. Babkin A. N. Aminov S. M. Melekhin Yu. P. Kazantsev P. M. Korol’kov 《Metallurgist》2006,50(3-4):152-157
Specifications require that all the welds in 12-m-diam. decomposers with a capacity of 3600 m3 be subjected to high-temperature tempering before going into service in order to alleviate the stresses from the welding
operation. Specialists at the organizations VNIIPTkhimnefteapparatury and VNIImontazhspetsstroi have proposed out-of-furnace
volumetric (complete) of the assembled decomposer with the use of special heaters. The use of this heating method has shortened
assembly operations while providing the welds with a highquality heat treatment and reducing the stresses overall (including
welding stresses, stresses from assembly of the decomposer, etc.) The technology ensures uniform heating of the housing of
the decomposer and provides for close control over the process. The experience gained in heat-treating decomposers can also
be used in the construction of other containers that come into contact with corrosive media.
__________
Translated from Metallurg, No. 3, pp. 61–64, March, 2006. 相似文献
3.
The phenomenon of persistent tunneling photoconductivity was studied using the tunneling spectroscopy technique at liquid-helium temperature: the separation between the unoccupied levels in a δ-doped layer at the GaAs surface decreased after illumination. This decrease was due to an increase in the width of the quantum well of the δ-doped layer. For photon energies hv exceeding the GaAs band gap E g , this increase in the width of the quantum well was related to the accumulation of positive charge in the depth of GaAs induced by the generation of the electron-hole pairs and photoionization of deep centers. For hv < E g (including the case of CO2 laser), only photoionization is important. The experimental data agree with the self-consistent calculations. The critical temperature for the effect has been determined (T c = 45 K); at higher temperatures, the effect disappears. 相似文献
4.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献
5.
Polycrystalline Cu(In,Ga)Se2 (CIGS) films with various ratios of Cu, In, and Ga were grown by codeposition of all elements in vacuum. The X-ray diffraction
study showed that the films are single-phase and possess a chalcopyrite structure with predominant [112] orientation. The
films exhibited a mirror smooth surface and had a close-packed structure composed of crystallites with clear faceting and
a transverse size of 0.1–0.3 μm. Related surface barrier structures of the (In,Ag)/Cu(In,Ga)Se2 type were obtained and their spectra of the quantum efficiency of photoconversion were studied. The obtained structures can
be used for optimization of the CIGS film technology. 相似文献
6.
The state of the surface of n-GaAs crystals upon high-vacuum microwave plasmachemical (HVMWPC) etching in various gas mixtures and the influence of the semiconductor surface condition on the photoelectric characteristics of related metal-semiconductor-metal structures with double Schottky barrier (MSMDSB structures) are investigated. Dependence of the HVMWPC etching rate of the GaAs surface on the gas mixture composition and substrate temperature is determined. It is shown that the HVMWPC etching regime strongly influences the photoelectric properties of MSMDSB structures: the treatment can lead to either growth or drop in photosensitivity of the samples. Optimum etching regimes are established for which good semiconductor surface quality and high photosensitivity of the MSMDSB structures are retained at a high etching rate. 相似文献
7.
Phase transformations in particles of ultrafine powders of graphite, hexagonal boron nitride, and quartz during rapid heating and cooling by passage through a laser beam were investigated. A continuous infrared laser with a wavelength of 10.6 μm was used as a heat source through which the powders were recycled several times. Methods of concentrating the product phases are described. Particles of diamond, carbides, cubic boron nitride, koesite and stishovite were obtained in the mixed products. 相似文献
8.
N. A. Sivov A. I. Martynenko G. N. Bondarenko M. P. Filatova E. Yu. Kabanova N. I. Popova A. N. Sivov E. B. Kruts’ko 《Petroleum Chemistry》2006,46(1):41-59
Structures and compositions of the monomers guanidine acrylate and guanidine methacrylate, their homopolymers, and copolymers with diallyldimethylammonium chloride enriched in acrylate comonomer units were determined. It was shown that ampholytic copolymers, owing to their ionic nature, contained comonomeric guanidine acrylate or methacrylate units and diallyldimethylammonium chloride units, as well as the acrylate comonomer with the diallyl counterion and polymeric acrylate and diallyl ion pairs. It follows from IR and 1H NMR data that guanidine methacrylate has the same structure (with two hydrogen bonds) in the solid state and in solutions. Guanidine acrylate structures in the solid state and in dimethylsulfoxide are identical and analogous to guanidine methacrylate structure in this solvent. In water, the guanidine acrylate structure has another type of hydrogen bonding (with one hydrogen bond, where the proton is shifted toward the guanidine group). These features of hydrogen bonding of guanidine acrylate and guanidine methacrylate are also retained in their homopolymers and copolymers with diallyldimethylammonium chloride. It was shown that the thermal stability of the copolymers was higher than that of their homopolymers, confirming the formation of intramolecular ion pairs of oppositely charged units of ampholytic copolymers. Moreover, the thermal stability of guanidine methacrylate-diallyldimethylammonium chloride copolymers is higher than that of guanidine acrylate-diallyldimethylammonium chloride copolymers. 相似文献
9.
A. M. Kut’in V. S. Polyakov M. F. Churbanov G. E. Snopatin 《Inorganic Materials》2007,43(9):1018-1023
Using a flow method, we have measured the vapor pressure of tellurium tetraiodide, an attractive reagent for chemical vapor deposition technology. The results, combined with earlier tensimetric data, have been used to evaluate the basic thermodynamic functions of TeI4 and its thermolysis products. 相似文献
10.
A. D. Pogrebnyak M. V. Il’yashenko V. S. Kshnyakin V. V. Ponaryadov Sh. M. Ruzimov Yu. N. Tyurin 《Technical Physics Letters》2003,29(12):1028-1030
Chromium carbide-nickel coatings were deposited onto a technical grade copper substrate by means of a high-velocity plasma
jet of a plasmatron operating in specially selected regimes. An analysis of the coatings showed evidence of the formation
of a Ni-based solid solution, a complex chromium carbide (Cr7C3), and an fcc crystal phase with a lattice parameter of 3.614 Å. The surface of the coatings exhibits a characteristic relief
resulting from a dynamic interaction between melted and fused particles of the initial powder. The local hardness on some
areas of the surface and in depth of the coating reaches 66±4.5 HRC, while the coating adhesion strength varies from 25 to
300 MPa. 相似文献