GaAs pHEMT-based technology for microwave applications in a volume MMIC production environment on 150-mm wafers

The establishment of a 150-mm (6-in) gallium arsenide (GaAs) facility is described together with the development of very high yielding and cost-effective semiconductor device technologies and a manufacturing capacity of over 40000 wafers/annum. The background to the demand for very high volumes of RF products for this market is discussed, together with the prospects for future growth. The paper describes recent process development by the utilization of a data-driven yield management system to support the delivery of high-quality RF products to customers. Finally, "end of line" DC and RF testing of finished 150-mm GaAs pHEMT foundry wafers is described, enabling scalar measurements of power, noise, and intermodulation products as well as vector measurements of S-parameters and noise parameters at frequencies of up to 40 GHz.     

On the hot-carrier-induced post-stress interface trap generation inn-channel MOS transistors

A continued fast interface trap generation is observed in n-channel MOS transistors after termination of the hot-carrier stress. The magnitude of this post-stress effect is strongly dependent on the conditions of the preceding stress, on the post-stress conditions and on the process parameters. For measurements at 293 K, a simple model is proposed which is based on the release of hydrogen by the thermal detrapping of holes, and which can explain the observed dependencies. The importance of the post-stress D_it-generation is illustrated for the case of dynamic stress conditions where it can lead to an apparently deviating degradation behavior     

Surface Areas of Nitrated Hydrotalcites

Hydrotalcites in the nitrate form were prepared using microwave irradiation in the hydrotreatment step. The surface area (BET) of nitrated hydrotalcites was evaluated. Solids were characterized by atomic absorption, X-ray diffraction and BET analysis. Thermal pretreatment temperature determined the surface area of the hydrotalcites.     

The use of hypertext in the writing of group papers

Abstract The Virtual Constructing Tool (VCT) was developed at the Nijmegen School of Management in 1998. The VCT is intended to facilitate the process of writing group papers through the use of construction and communication tools and is based completely on the Internet. The VCT allows a paper to be structured by means of hyperlinking and cooperation between students. Students are allowed to divide tasks, but they are held responsible for the quality of the arguments in the paper as a whole. They are invited to spend time in dealing with validity claims and in building a valid train of thought. Producing a group paper includes four interrelated working processes: exploring the subject, exchanging information, arguing and discussing and editing. Hyperlinking offers a contribution in each of these processes which varies from associative linking of pieces of information to strengthening linear structuring. Therefore, a different perspective has been taken to that of those authors who consider hyperlinking as a tool par excellence for the nonlinear production of information.     

10 Gbit/s transmission over 50 km nonzero dispersion-shifted fibreusing 1.3 μm directly modulated uncooled transmitters

A 1.3 μm uncooled transmitter with wide-open eye diagrams at laser temperatures of 20, 50, and 85°C is presented. Using this transmitter, it is demonstrated that 10 Gbit/s transmission is possible over a 50 km nonzero dispersion-shifted Lucent TrueWave-RS fibre. This result is compared with transmission over a 55 km standard singlemode fibre     

Multi-Gb/s silicon bipolar clock recovery IC

A novel clock recovery IC for optical fiber communication systems with data rates up to several Gb/s is presented. It combines nonlinear signal preprocessing directly with a regenerative frequency divider scheme and an external filter in the divider loop. Hence, the center frequency of the filter and the working frequency of the amplifier are halved. The extracted clock frequency corresponds to half the bit rate, as required for many clocked circuit components within fiber optic lines. Two versions of the same IC design, scheduled for two bit rate ranges between 0.3-4 Gb/s, are realized with a conventional Si bipolar process. Clock recovery is demonstrated at 2.2 and 3.52 Gb/s, using both cavity and surface acoustic wave (SAW) filters