A sensorless brushless dc motor system

This paper describes a brushless dc motor system without position or speed sensor. The brushless motor consists of a permanent magnet synchronous motor and a voltage-source inverter capable of controlling the amplitude and frequency of voltage. The rectangular-shaped stator current with a conducting interval of 120° (electrical) is controlled to be in phase with the trapezoidal back electromotive force. This results in producing maximum torque. Variable speed is achieved by adjusting the average motor voltage similarly to chopper control of dc motors. In this paper, two sensorless position detecting methods, i.e., an “indirect method” suited for the lower-speed range and a “direct method” suited for the higher-speed range are proposed. The combination of the two makes it possible to detect the rotor position over a wide-speed range. Furthermore, a speed-sen-sorless PLL control is proposed in applying the principle of the direct method. Experimental results obtained from a prototype brushless dc motor are shown to confirm the validity of the sensorless drive. The starting procedure of the motor also is discussed because it is impossible to detect the rotor position at a standstill.     

Hematopoietic–Mesenchymal Signals Regulate the Properties of Mesenchymal Stem Cells

It is well known that the properties of hematopoietic stem/progenitor cells (HSCs), such as their self-renewal ability and multipotency, are maintained through interactions with mesenchymal stem/stromal cells (MSCs). MSCs are rare cells that are present in the bone marrow and are useful for clinical applications due to their functional ability. To obtain the necessary number of cells, MSCs must be cultured to expand, but this causes a remarkable decrease in stem cell properties, such as multipotency and proliferation ability. In this study, we show that the c-Mpl signal, which is related to the maintenance of hematopoietic stem cells, has an important effect on the proliferation and differentiation ability of MSCs. Utilizing a co-culture system comprising MSCs and HSCs, it is suggested that signaling from hematopoietic cells to MSCs supports cell proliferation. Interestingly, the enhanced proliferation ability of the HSCs was decreased in c-Mpl knock-out HSCs (c-Mpl-KO). In addition, the MSCs co-cultured with c-Mpl-KO HSCs had reduced MSC marker expression (PDGFRa and Sca-1) compared to the MSCs co-cultured with c-Mpl-wild-type HSCs. These results suggest that a hematopoietic–mesenchymal signal exists, and that the state of the HSCs is important for the stability of MSC properties.     

计及旁路二极管效应的太阳能模组性能评估

为避免功率失配损失,太阳能模组一般都配置旁路二极管,提供一个能量散逸的途径。基于这种配置提出一种新的太阳能模组性能评估算法。依据实际旁路区段配置建立网络方程,通过牛顿–拉夫逊非线性迭代方法实现拓扑求解,继而获得模组的整体性能。在用制造商标准测试数据验证了该评估算法的有效性后,进一步考察各种阴影场景下的模组整体性能,并给出全局最大功率点(maximal power point,MPP)位置随辐射强度变化时的定性结论。理论分析和仿真结果表明,由于多辐射强度导致功率多峰值的存在,常规最大功率点跟踪(maximal power point track,MPPT)算法可能会因为只能检测到MPPT伪极大值点而失效;而且,旁路二极管的合理配置对太阳能模组性能有很大影响。     

Tough and Self‐Recoverable Thin Hydrogel Membranes for Biological Applications

Tough and self‐recoverable hydrogel membranes with micrometer‐scale thickness are promising for biomedical applications, which, however, rarely be realized due to the intrinsic brittleness of hydrogels. In this work, for the first time, by combing noncovalent DN strategy and spin‐coating method, we successfully fabricated thin (thickness: 5–100 µm), yet tough (work of extension at fracture: 10⁵–10⁷ J m^?3) and 100% self‐recoverable hydrogel membranes with high water content (62–97 wt%) in large size (≈100 cm²). Amphiphilic triblock copolymers, which form physical gels by self‐assembly, were used for the first network. Linear polymers that physically associate with the hydrophilic midblocks of the first network, were chosen for the second network. The inter‐network associations serve as reversible sacrificial bonds that impart toughness and self‐recovery properties on the hydrogel membranes. The excellent mechanical properties of these obtained tough and thin gel membranes are comparable, or even superior to many biological membranes. The in vitro and in vivo tests show that these hydrogel membranes are biocompatible, and postoperative nonadhesive to neighboring organs. The excellent mechanical and biocompatible properties make these thin hydrogel membranes potentially suitable for use as biological or postoperative antiadhesive membranes.     

Thin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory

Polymer ferroelectric-gate field effect transistors (Fe-FETs) employing ferroelectric polymer thin films as gate insulators are highly attractive as a next-generation non-volatile memory. For minimizing gate leakage current of a device which arises from electrically defective ferroelectric polymer layer in particular at low operation voltage, the materials design of interlayers between the ferroelectric insulator and gate electrode is essential. Here, we introduce a new solution-processed interlayer of conductive reduced graphene oxides (rGOs) modified with a conjugated block copolymer, poly(styrene-block-paraphenylene) (PS-b-PPP). A FeFET with a solution-processed p-type oligomeric semiconducting channel and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) insulator exhibited characteristic source–drain current hysteresis arising from ferroelectric polarization switching of a PVDF-TrFE insulator. Our PS-b-PPP modified rGOs (PMrGOs) with conductive moieties embedded in insulating polymer matrix not only significantly reduced the gate leakage current but also efficiently lowered operation voltage of the device. In consequence, the device showed large memory gate voltage window and high ON/OFF source–drain current ratio with excellent data retention and read/write cycle endurance. Furthermore, our PMrGOs interlayers were successfully employed to FeFETs fabricated on mechanically flexible substrates with promising non-volatile memory performance under repetitive bending deformation.     

Transparent ultra-long-haul DWDM networks with "broadcast-and-select" OADM/OXC architecture

We describe an experimental realization of ultra-long-haul (ULH) networks with dynamically reconfigurable transparent optical add-drop multiplexers (OADMs) and optical cross-connects (OXCs). A simple new approach to dispersion management in ULH dense-wavelength-division-multiplexing (DWDM) transparent optical networks is proposed and implemented, which enables excellent transmission performance while avoiding dispersion compensation on a connection-by-connection basis. We demonstrate "broadcast-and-select" node architectures that take full advantage of this method. Our implementation of signal leveling ensures minimum variations of path-averaged power among the wavelength-division-multiplexing (WDM) channels between the dynamic gain-equalizing nodes and results in uniform nonlinear and spontaneous-emission penalties across the WDM spectrum. We achieve 80/spl times/10.7-Gb/s DWDM networking over 4160 km (52 spans/spl times/80 km each) of all-Raman-amplified symmetric dispersion-managed fiber and 13 concatenated OADMs or 320/spl times/320 wavelength-port OXCs with 320-km node spacing. The WDM channels use 50-GHz grid in C band and the simple nonreturn-to-zero (NRZ) modulation format. The measured Q values exhibit more than a 1.8-dB margin over the forward-error correction threshold for 10/sup -15/ bit-error-rate operation. We compare these results with point-to-point transmission of 80/spl times/10-Gb/s NRZ WDM signals over 4160 km without OADM/OXC and provide detailed characterization of penalties due to optical signal-to-noise-ratio degradation, filter concatenation, and crosstalk.     

Nanoimprint Lithography Facilitated Plasmonic-Photonic Coupling for Enhanced Photoconductivity and Photocatalysis

Imprint lithography has emerged as a reliable, reproducible, and rapid method for patterning colloidal nanostructures. As a promising alternative to top-down lithographic approaches, the fabrication of nanodevices has thus become effective and straightforward. In this study, a fusion of interference lithography (IL) and nanosphere imprint lithography on various target substrates ranging from carbon film on transmission electron microscope grid to inorganic and dopable polymer semiconductor is reported. 1D plasmonic photonic crystals are printed with 75% yield on the centimeter scale using colloidal ink and an IL-produced polydimethylsiloxane stamp. Atomically smooth facet, single-crystalline, and monodisperse colloidal building blocks of gold (Au) nanoparticles are used to print 1D plasmonic grating on top of a titanium dioxide (TiO₂) slab waveguide, producing waveguide-plasmon polariton modes with superior 10 nm spectral line-width. Plasmon-induced hot electrons are confirmed via two-terminal current measurements with increased photoresponsivity under guiding conditions. The fabricated hybrid structure with Au/TiO₂ heterojunction enhances photocatalytic processes like degradation of methyl orange (MO) dye molecules using the generated hot electrons. This simple colloidal printing technique demonstrated on silicon, glass, Au film, and naphthalenediimide polymer thus marks an important milestone for large-scale implementation in optoelectronic devices.     

10-Gb/s error-free transmission under optical reflection using isolator-free 1.3- /spl mu/m InP-based vertical-cavity surface-emitting lasers

Error-free transmission through 10-km single-mode fiber at 10 Gb/s under -13-dB optical reflections has been demonstrated for the first time using a directly modulated 1.3-/spl mu/m InP-based VCSEL without any optical isolator. The 13-GHz relaxation oscillation frequency and stable polarization suppresses relative intensity noise degradation under optical reflection. Only 1-dB error-free power penalty has been observed with optical reflection set with the worst polarization direction.     

Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED

All the six lattice parameters (a, b, c, alpha, beta and gamma) of a strained area of an InAs layer grown on a GaAs substrate were determined without any assumption of the crystal lattice symmetry from the higher-order Laue zone (HOLZ) lines appearing in one convergent-beam electron diffraction (CBED) pattern. The analysis was performed with three steps. Firstly, the parameters alpha and beta were determined from the deviations of the HOLZ lines from the mirror symmetry perpendicular to the [001] direction. Secondly, the parameter c was determined from the distance between the intersections of the HOLZ lines, which have the same h and k indices but different l indices. Finally, the parameters a, b and gamma were determined simultaneously from several distances between the intersections of the HOLZ lines. The lattice parameters determined for the strained area were a = 0.611(2) nm, b = 0.615(1) nm, c = 0.6119(7) nm, alpha = 89.5(1) degrees, beta = 89.0(2) degrees and gamma = 89.1(2) degrees. This result implies that the cubic lattice of InAs is elongated approximately in the [111] direction and the exact lattice symmetry is triclinic. The same analysis procedure was applied to another two specimen areas. It was found that the areas have orthorhombic distortions with lattice parameters a = 0.607(2) nm, b = 0.604(1) nm and c = 0.6085(7) nm for one area, and with a = 0.607(2) nm, b = 0.605(1) nm and c = 0.6065(7) nm for the other area. It is should be emphasized that the present analysis of lattice distortions is immediately applicable to the other semiconductors, such as Si, SiGe or GaAs layers, without assuming any crystal system.