Influence of Bulky Organo‐Ammonium Halide Additive Choice on the Flexibility and Efficiency of Perovskite Light‐Emitting Devices

Perovskite light‐emitting diodes (LEDs) require small grain sizes to spatially confine charge carriers for efficient radiative recombination. As grain size decreases, passivation of surface defects becomes increasingly important. Additionally, polycrystalline perovskite films are highly brittle and mechanically fragile, limiting their practical applications in flexible electronics. In this work, the introduction of properly chosen bulky organo‐ammonium halide additives is shown to be able to improve both optoelectronic and mechanical properties of perovskites, yielding highly efficient, robust, and flexible perovskite LEDs with external quantum efficiency of up to 13% and no degradation after bending for 10 000 cycles at a radius of 2 mm. Furthermore, insight of the improvements regarding molecular structure, size, and polarity at the atomic level is obtained with first‐principles calculations, and design principles are provided to overcome trade‐offs between optoelectronic and mechanical properties, thus increasing the scope for future highly efficient, robust, and flexible perovskite electronic device development.     

混合信号芯片设计处理关键的转折阶段

通过简单地剪切和粘贴知识产权(IP)内核可以加快无工厂半导体公司的系统级芯片(SOC)设计。 过去十年中,涌现出大量的为系统制造商提供专用芯片(ASIC)的小型IC设计公司。这些被称为无工厂企业(因为他们将IC制造过程转交给商业芯片制造工厂),需要的启动资金较少,而且如果市场接受他们的产品的话,能够获得丰厚的回报。在大量设计工具的支持下,这些无工厂设计企业在历史悠久的大型芯片制造商,如IBM、Intel、Motorola和德州仪器公司所主导的市场中赢得了一席之地。     

Cyclic Fatigue-Crack Propagation in Magnesia-Partially-Stabilized Zirconia Ceramics

The subcritical growth of fatigue cracks under (tension-tension) cyclic loading is demonstrated for ceramic materials, based on experiments using compact C(T) specimens of a MgO-partially-stabilized zirconia (PSZ), heat-treated to vary the fracture toughness K _c from ∼3 to 16 MPa·m^1/2 and tested in inert and moist environments. Analogous to behavior in metals, cyclic fatigue-crack rates (over the range 10⁻¹¹ to 10⁻⁵ m/cycle) are found to be a function of the stress-intensity range, environment, fracture toughness, and load ratio, and to show evidence of fatigue crack closure. Unlike toughness behavior, growth rates are not dependent on through0-thickness constraint. Under variable-amplitude cyclic loading, crack-growth rates show transient accelerations following low-high block overloads and transient retardations following high-low block overloads or single tensile overloads, again analogous to behavior commonly observed in ductile metals. Cyclic crack-growth rates are observed at stress intensities as low as 50% of K _c , and are typically some 7 orders of magnitude faster than corresponding stress-corrosion crack-growth rates under sustained-loading conditions. Possible mechanisms for cyclic crack advance in ceramic materials are examined, and the practical implications of such "ceramic fatigue" are briefly discussed.     

Naßmahlung in Rührwerksmühlen

Wet grinding in agitated ball mills. To ensure certain product qualities it is necessary to have very fine particles or a narrow particle size distribution. For this process agitated ball mill grinding can be used as well as crystallisation and precipitation. Cost effective grinding of very fine products to a narrow particle size distribution requires that the effects of variation of strain intensity, frequency of impacts, residence time distribution, size of grinding media, viscosity of liquid and concentration of feed material should be known. The most important parameters and their effects on the grinding result are demonstrated, as well as explained by a model, and the consequences for the operating conditions of agitated ball mills are presented. By using small grinding media in agitated ball mills the production rate can be increased, or at the same energy level smaller particles can be obtained by grinding or deagglomeration. At high flow rates and a narrow residence time distribution the feed material becomes more homogeneous. These facts require the development of new or modified types of agitated ball mills.     

CdTe/CdS thin film solar cells grown in substrate configuration

The ability to grow efficient CdTe/CdS solar cells in substrate configuration would not only allow for the use of non‐transparent and flexible substrates but also enable a better control of junction formation. Yet, the problems of barrier formation at the back contact as well as the formation of a p–n junction with reduced recombination losses have to be solved. In this work, CdTe/CdS solar cells in substrate configuration were developed, and the results on different combinations of back contact materials are presented. The Cu content in the electrical back contact was found to be a crucial parameter for the optimal CdCl₂‐treatment procedure. For Cu‐free cells, two activation treatments were applied, whereas Cu‐containing cells were only treated once after the CdTe deposition. A recrystallization behavior of the CdTe layer upon its activation similar to superstrate configuration was found; however, no CdTe–CdS intermixing could be observed when the layers were treated consecutively. Remarkably high V_OC and fill factor of 768 mV and 68.6%, respectively, were achieved using a combination of MoO₃, Te, and Cu as back contact buffer layer resulting in 11.3% conversion efficiency. With a Cu‐free MoO₃/Te buffer material, a V_OC of 733 mV, a fill factor of 62.3%, and an efficiency of 10.0% were obtained. Copyright © 2012 John Wiley & Sons, Ltd.     

Do ESD fails in systems correlate with IC ESD robustness?

Integrated circuits (ICs) are qualified for their electrostatic discharge (ESD) robustness according to the well-known IC ESD standards Human Body Model, Machine Model, and Charged Device Model in order to guarantee safe handling in ESD protected areas. For electronic systems like mobile phones which are in direct use by consumers, certain robustness against system level ESD is demanded, too. As the ESD test methods of device and system level stress are completely different (waveforms, stress application, operating condition of the DUT, etc.), correlations between models of both worlds are difficult to establish. Therefore, the system vendors more and more demand a specified ESD robustness for devices (ICs) according to an ESD system level standard. Testing ICs to a system level ESD standard requires careful considerations; first ideas are summarized in the new Standard Practice “Human Metal Model” of the ESDA/ANSI. However, the approach of deriving system ESD robustness from IC robustness is currently too much simplified and bears severe potential risks. Nevertheless, there are methodologies and approaches to use IC ESD characterization for defining ESD protection concepts for systems. Appropriate high-current characterization of ICs can be the cornerstone for a successfully optimized system ESD protection.     

Decohesion Kinetics of PEDOT:PSS Conducting Polymer Films

The highly conductive polymer PEDOT:PSS is a widely used hole transport layer and transparent electrode in organic electronic devices. To date, the mechanical and fracture properties of this conductive polymer layer are not well understood. Notably, the decohesion rate of the PEDOT:PSS layer and its sensitivity to moist environments has not been reported, which is central in determining the lifetimes of organic electronic devices. Here, it is demonstrated that the decohesion rate is highly sensitive to the ambient moisture content, temperature, and mechanical stress. The kinetic mechanisms are elucidated using atomistic bond rupture models and the decohesion process is shown to be facilitated by a chemical reaction between water molecules from the environment and strained hydrogen bonds. Hydrogen bonds are the predominant bonding mechanism between individual PEDOT:PSS grains within the layer and cause a significant loss in cohesion when they are broken. Understanding the decohesion kinetics and mechanisms in these films is essential for the mechanical integrity of devices containing PEDOT:PSS layers and yields general guidelines for the design of more reliable organic electronic devices.     

Molecular Origin of the Charge Carrier Mobility in Small Molecule Organic Semiconductors

Small‐molecule organic semiconductors are used in a wide spectrum of applications, ranging from organic light emitting diodes to organic photovoltaics. However, the low carrier mobility severely limits their potential, e.g., for large area devices. A number of factors determine mobility, such as molecular packing, electronic structure, dipole moment, and polarizability. Presently, quantitative ab initio models to assess the influence of these molecule‐dependent properties are lacking. Here, a multiscale model is presented, which provides an accurate prediction of experimental data over ten orders of magnitude in mobility, and allows for the decomposition of the carrier mobility into molecule‐specific quantities. Molecule‐specific quantitative measures are provided how two single molecule properties, the dependence of the orbital energy on conformation, and the dipole‐induced polarization determine mobility for hole‐transport materials. The availability of first‐principles based models to compute key performance characteristics of organic semiconductors may enable in silico screening of numerous chemical compounds for the development of highly efficient optoelectronic devices.