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1.
In order to produce highly concentrated bioethanol by pervaporation using an ethanol‐permselective silicalite membrane, techniques to suppress adsorption of succinic acid, which is a chief by‐product of ethanol fermentation and causes the deterioration in pervaporation performance, onto the silicalite crystals was investigated. The amount adsorbed increased as the pH of the aqueous succinic acid solution decreased. The pervaporation performance also decreased with decreasing pH when the ternary mixtures of ethanol/water/succinic acid were separated. Using silicalite membranes individually coated with two types of silicone rubber, pervaporation performance was significantly improved in the pH range of 5 to 7, when compared with that of non‐coated silicalite membranes in ternary mixtures of ethanol/water/succinic acid. Moreover, when using a silicalite membrane double‐coated with the two types of silicone rubber, pervaporation performance was stabilized at lower pH values. In the separation of bioethanol by pervaporation using the double‐coated silicalite membrane, removal of accumulated substances having an ultraviolet absorption maximum at approximately 260 nm from the fermentation broth proved to be vital for efficient pervaporation. Copyright © 2005 Society of Chemical Industry  相似文献   
2.
This paper focuses on the microscopic damage and progressive failure of a composite reinforced by plain-weave glass cloth under tensile fatigue loading. The fatigue process was divided into three stages like that of multi-directional laminates. It was found that the internal damage at each stage (matrix cracks, debonds in the weft, successive debonds in the warp and ‘metadelaminations’ between warps and wefts) occurred near the cross-over point of the fabric. The modulus decay mechanism was explained by considering the progression of this internal damage. From the end of the first stage to the beginning of the middle stage, a characteristic damage state (CDS) (called a ‘meta-CDS’) was observed. It was found that woven composites have a unit area of damage accumulation (called a ‘unit cell’) and the damage of each unit cell and its distribution control the total fatigue damage of the material.  相似文献   
3.
The effect of plasma elongation on the second‐stable spherical tokamak (ST) was numerically studied using the experimentally measured pressure and current profiles of ultrahigh‐beta STs. The maximum beta of ST over 50% was obtained in the TS‐3 ST/CT experiment by applying an external toroidal field to an FRC. It was found that the marginal beta for the ballooning instability increased with the plasma elongation κ of ST. The elongated STs with κ > 2 have the magnetic shear (S)–pressure gradient (α) profiles located in the second‐stable regime for the ballooning mode and the stability margin increased with κ. The close relation between the absolute minimum‐B profile and the second stability was documented. The effect of elongation on maximum beta was observed to saturate when κ exceed 3, indicating that the optimized elongation for high‐beta STs is located around 2 < κ < 3. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 155(4): 1–6, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20132  相似文献   
4.
Electric power systems are expanding in size and complexity, and the requirement for the energy management system (EMS) is becoming more important. In this computer control system, a single control computer is used mainly as the primary computer and its software is very complicated because of its hugh number of small, quick tasks to obtain high response speed. Therefore, much effort is needed to develop and modify the programs, and the responsiveness of this centralized architecture varies greatly when many faults occur in the power system. This paper describes a new distributed architecture for the EMS. Distributed processors execute the functions cooperatively with periodic access to the common bulletin board database in which information about the power system exist. This architecture facilitates the software development and maintenance, and it also enhances the performance by the parallel processing of the distributed functions.  相似文献   
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6.
The lipid droplet (LD), an organelle that exists ubiquitously in various organisms, from bacteria to mammals, has attracted much attention from both medical and cell biology fields. The LD in white adipocytes is often treated as the prototype LD, but is rather a special example, considering that its size, intracellular localization and molecular composition are vastly different from those of non-adipocyte LDs. These differences confer distinct properties on adipocyte and non-adipocyte LDs. In this article, we address the current understanding of LDs by discussing the differences between adipocyte and non-adipocyte LDs.  相似文献   
7.
Crack-tip dislocations in silicon crystals have been examined by using high-voltage electron microscopy. Cracks were introduced by the Vickers indentation method at room temperature and the indented specimens were annealed at high temperatures to induce dislocations around crack tips under the presence of residual stress due to the indentation. A selected area around a crack tip was thinned by a focused ion beam (FIB) technique. Specimens were thinned in advance by a twin-blade cutting (TBC) method, which is a simple cutting process for saving FIB machine time. A combination of FIB and TBC can be a useful thinning procedure for the efficient preparation of transmission electron microscopy specimens. Characteristic dislocation structures were observed around the tip of a crack, aiding the elucidation of dislocation processes, which is essential to increase the fracture toughness of materials.  相似文献   
8.
This paper proposes a power integrity control technique for dynamically controlling power supply voltage fluctuations for a device under test (DUT), and demonstrates its effectiveness for eliminating the overkills/underkills due to the difference of power supply impedance between an automatic test equipment (ATE) and a practical operating environment of the DUT. The proposed method injects compensation currents into the power supply nodes on the ATE system in a feed-forward manner such that the ATE power supply waveform matches with the one on the customer’s operating environment of the DUT. A method for calculating the compensation current is also described. Experimental results show that the proposed method can emulate the power supply voltage waveform under a customer’s operating condition and eliminate 95 % of overkills/underkills in the maximum operating frequency testing with 105 real silicon devices. Limitations and applications of the proposed method are also discussed.  相似文献   
9.
The high residual stress in a resin-molded electronic package sometimes makes the electronic functions unstable. Therefore the residual stress in electronic packages, especially on the top surfaces of semiconductor chips, should be evaluated. The objective of this study is to present a simple method for evaluating residual stress in resin-molded semiconductor chips using a combination of experimental and numerical methods. The actual residual stress of the packaging process was measured by using test chips that included piezoresistive gauges. A linear thermoelastic finite element analysis was then carried out using a three-dimensional model. The finite element analysis was performed under a stress-free temperature determined by the temperature dependence of the residual stress, which was experimentally measured by using the piezoresistive test chips. The measured residual stress using the test chips agreed well with the results of the finite element analysis. It was therefore confirmed that the present evaluation method, combining experimental and numerical methods, is reliable and reasonable.  相似文献   
10.
Channel length dependence of field-effect mobility and source/drain parasitic resistance in pentacene thin-film transistors with a bottom-gate, bottom-contact configuration was investigated. Schottky barrier effect such as nonlinear behaviors in transistor output characteristics appeared and became more prominent for shorter channel length less than 10 μm, raising some concerns for a simple utilization of conventional parameter extraction methods. Therefore the gate-voltage-dependent hole mobility and the source/drain parasitic resistance in the pentacene transistors were evaluated with the aid of device simulation accounting for Schottky contact with a thermionic field emission model. The hole mobility in the channel region shows smaller values with shorter channel length even after removing the influence of Schottky barrier, suggesting that some disordered semiconductor layers with low carrier mobility exist near the contact electrode. This experimental data analysis with the simulation enables us to discuss and understand in detail the operation mechanism of bottom-gate, bottom-contact transistors by considering properly each process of charge carrier injection, carrier flow near the contact region, and actual channel transport.  相似文献   
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