首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   234750篇
  免费   18042篇
  国内免费   9491篇
电工技术   12994篇
技术理论   25篇
综合类   14459篇
化学工业   39479篇
金属工艺   13673篇
机械仪表   14945篇
建筑科学   17995篇
矿业工程   7741篇
能源动力   6575篇
轻工业   14035篇
水利工程   3701篇
石油天然气   17000篇
武器工业   1717篇
无线电   25785篇
一般工业技术   27901篇
冶金工业   13104篇
原子能技术   2342篇
自动化技术   28812篇
  2024年   1034篇
  2023年   3901篇
  2022年   6696篇
  2021年   9438篇
  2020年   7287篇
  2019年   6179篇
  2018年   6879篇
  2017年   7731篇
  2016年   6905篇
  2015年   9127篇
  2014年   11530篇
  2013年   13612篇
  2012年   14641篇
  2011年   15882篇
  2010年   13791篇
  2009年   13004篇
  2008年   12682篇
  2007年   12184篇
  2006年   12638篇
  2005年   10991篇
  2004年   7438篇
  2003年   6402篇
  2002年   5645篇
  2001年   5044篇
  2000年   5589篇
  1999年   6605篇
  1998年   5549篇
  1997年   4545篇
  1996年   4290篇
  1995年   3560篇
  1994年   2873篇
  1993年   2006篇
  1992年   1558篇
  1991年   1243篇
  1990年   943篇
  1989年   751篇
  1988年   543篇
  1987年   343篇
  1986年   287篇
  1985年   198篇
  1984年   141篇
  1983年   114篇
  1982年   124篇
  1981年   98篇
  1980年   71篇
  1979年   36篇
  1978年   26篇
  1977年   20篇
  1976年   35篇
  1973年   13篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
1.
The pill-box and block RF windows for millimeter wave (MMW) tubes are presented. The pill-box window is suitable for broadband MMW tubes. And the block window can be used for high power tubes in short MMW. The equivalent circuits for two windows are given. To reach better match characteristics in wider operating bandwidth, the optimum design methods for pill-box and block window in MMW tubes are described in this paper. The testing results show that the theoretic computation is fast and useful accuracy. The design methods possess references value to designer for MMW tubes.  相似文献   
2.
Amphiphilic magnetic microspheres ranging in diameter from 5 to 100 µm were prepared by dispersion copolymerization of styrene and poly(ethylene oxide) vinylbenzyl (PEO‐VB) macromonomer (MPEO) in the presence of Fe3O4 magnetic fluid. The effects of various polymerization parameters on the average particle size were systematically investigated. The average particle size was found to increase with increasing styrene concentration and initiator concentration. It also increased with decreasing stabilizer concentration and molecular weight of MPEO. The content of the hydroxyl groups localized in the microspheres ranged from 0.01 to 0.2 mmol g?1. © 2003 Society of Chemical Industry  相似文献   
3.
撞车     
流火 《视听技术》2006,(1):83-83
洛杉矶夜晚在公路上发生的一起 轻微的多车追尾事故,将数个毫 不相关的男男女女联系到了一起, 其中包括:政治前途远大的州议 员夫妇、受到无理警察纠缠只得忍气吞声的黑人 导演夫妇、两个无厘头式的黑人抢劫者、种族歧 视极深的白人警察、脾气不好的波斯杂货商、韩  相似文献   
4.
A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.  相似文献   
5.
丙烯腈中有机杂质丙烯醛、丙酮、乙腈是其重要指标,现在丙烯腈的国标测试方法用填充柱气相色谱法分析丙烯腈中有机杂质丙烯醛、丙酮、乙腈的含量,此法分析时间长,灵敏度低。为了及时准确提供分析数据,用毛细管气相色谱法测定丙烯腈中有机杂质的含量。  相似文献   
6.
A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.  相似文献   
7.
Polyaryloxydiphenylsilanes were prepared from phosphorus‐containing diols and diphenydichlorolsilane through solution polymerization. With a stoichiometric imbalance in feed monomers, the resulting polymers exhibited moderate melting points and good processing properties. The polymers prepared showed initial decomposition temperatures above 340 °C, excellent thermal stability, high char yields at 850 °C and very high limited oxygen index values of 56–59. The polymers' char yields and their (P + Si) contents showed linear relationships. © 2003 Society of Chemical Industry  相似文献   
8.
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.  相似文献   
9.
研究了两种比活度的131Ⅰ-MIBG在正常及利血平抑制后在鼠体内的分布,结果表明:注射后4h,正常鼠心肌对3.22TBq/g的MIBG摄取为9.08%ID/g,明显高于对18.5GBq/g的摄取(4.87%ID/g)。计算表明,比活度主要影响了鼠心肌交感神经囊泡内摄取,而与囊泡外摄取无关.当MIBG用于心肌显像时,高比活度的MIBG有利于诊断。  相似文献   
10.
A distributed problem solving system can be characterized as a group of individual cooperating agents running to solve common problems. As dynamic application domains continue to grow in scale and complexity, it becomes more difficult to control the purposeful behavior of agents, especially when unexpected events may occur. This article presents an information and knowledge exchange framework to support distributed problem solving. From the application viewpoint the article concentrates on the stock trading domain; however, many presented solutions can be extended to other dynamic domains. It addresses two important issues: how individual agents should be interconnected so that their resources are efficiently used and their goals accomplished effectively; and how information and knowledge transfer should take place among the agents to allow them to respond successfully to user requests and unexpected external situations. The article introduces an architecture, the MASST system architecture, which supports dynamic information and knowledge exchange among the cooperating agents. The architecture uses a dynamic blackboard as an interagent communication paradigm to facilitate factual data, business rule, and command exchange between cooperating MASST agents. The critical components of the MASST architecture have been implemented and tested in the stock trading domain, and have proven to be a viable solution for distributed problem solving based on cooperating agents  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号