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Sample preparation for DNA and RNA assays is a prime candidate for laboratory automation. A novel, parallel processing device that performs the three separate liquid-handling functions necessary for such sample preparation-dispensing, pipetting, and pressurizing-is presented. The device comprises an array of fine nozzles connected by fluidic channels to automatically and precisely distribute flow between one source and an array of points. The design principles, as well as the experimental and computational methods used to develop the device, are described. Test results, including accuracy, uniformity, volume range, and timing, are presented. The functionality of the device is demonstrated by performing a solid-phase extraction of DNA with two types of microcolumns.  相似文献   
3.
Freestanding silicon nanocrystals (Si‐ncs) offer unique optical and electronic properties for new photovoltaic, thermoelectric, and other electronic devices. A method to fabricate Si‐ncs which is scalable to industrial usage has been developed in recent years. However, barriers to the widespread utilization of these nanocrystals are the presence of charge‐trapping defects and an oxide shell formed upon ambient atmosphere exposure hindering the charge transport. Here, we exploit low‐cost post‐growth treatment routes based on wet‐etching in hydrofluoric acid plus surface hydrosilylation or annealing enabling a complete native oxide removal and a reduction of the defect density by up to two orders of magnitude. Moreover, when compared with only H‐terminated Si‐ncs we report an enhancement of the conductivity by up to a factor of 400 for films of HF etched and annealed Si‐ncs, which retain a defect density below that of untreated Si‐ncs even after several months of air exposure. Further, we demonstrate that HF etched and hydrosilylated Si‐ncs are extremely stable against oxidation and maintain a very low defect density after a long‐term storage in air, opening the possibility of device processing in ambient atmosphere.  相似文献   
4.
The reflection and photoluminescence excitation spectra under circular polarization of the incident light are measured in wide quantum wells whose width is much larger than the exciton Bohr radius. It is found that, in the absence of a magnetic field, the relation between the intensities of even and odd absorption peaks is reversed upon reversal of the sign of circular polarization.  相似文献   
5.
Piezoelectricity is a well‐established property of biological materials, yet its functional role has remained unclear. Here, a mechanical effect of piezoelectric domains resulting from collagen fibril organisation is demonstrated, and its role in tissue function and application to material design is described. Using a combination of scanning probe and nonlinear optical microscopy, a hierarchical structuring of piezoelectric domains in collagen‐rich tissues is observed, and their mechanical effects are explored in silico. Local electrostatic attraction and repulsion due to shear piezoelectricity in these domains modulate fibril interactions from the tens of nanometre (single fibril interactions) to the tens of micron (fibre interactions) level, analogous to modulated friction effects. The manipulation of domain size and organisation thus provides a capacity to tune energy storage, dissipation, stiffness, and damage resistance.  相似文献   
6.
We report the successful system demonstration of a four-wavelength integrated-optics amplifying combiner. The arrangement consists of an all-connectorized 4/spl times/1 glass splitter followed by a 4.5-cm-long Er/Yb-doped waveguide amplifier. When injecting 120 mW of 975-nm laser diode pump, we record, in the amplifying section, 11.6 dB of net gain in the single pass configuration and 23 dB in the double pass as well as a noise figure of 4.5 dB. These results show the potentiality of ion-exchange technology for the fabrication of lossless telecommunication devices.  相似文献   
7.
Development of nano-composite lead-free electronic solders   总被引:1,自引:0,他引:1  
Inert, hybrid inorganic/organic, nano-structured chemicals can be incorporated into low melting metallic materials, such as lead-free electronic solders, to achieve desired levels of service performance. The nano-structured materials technology of polyhedral oligomeric silsesquioxanes (POSS), with appropriate organic groups, can produce suitable means to promote bonding between nano-reinforcements and the metallic matrix. The microstructures of lead-free solder reinforced with surface-active POSS tri-silanols were evaluated using scanning electron microscopy (SEM). Wettability of POSS-containing lead-free solders to copper substrate was also examined. Steady-state deformation of solder joints made of eutectic Sn-Ag solder containing varying weight fractions of POSS of different chemical moieties were evaluated at different temperatures (25°C, 100°C, and 150°C) using a rheometric solids analyzer (RSA-III). Mechanical properties such as shear stress versus simple shear-strain relationships, peak shear stress as a function of rate of simple shear strain, and testing temperature for such nano-composite solders are reported. The service reliability of joints made with these newly formulated nano-composite solders was evaluated using a realistic thermomechanical fatigue (TMF) test profile. Evolution of microstructures and residual mechanical property after different extents of TMF cycles were evaluated and compared with joints made of standard, unreinforced eutectic Sn-Ag solder.  相似文献   
8.
This paper presents ProFlex, a distributed data storage protocol for large-scale Heterogeneous Wireless Sensor Networks (HWSNs) with mobile sinks. ProFlex guarantees robustness in data collection by intelligently managing data replication among selected storage nodes in the network. Contrarily to related protocols in the literature, ProFlex considers the resource constraints of sensor nodes and constructs multiple data replication structures, which are managed by more powerful nodes. Additionally, ProFlex takes advantage of the higher communication range of such powerful nodes and uses the long-range links to improve data distribution by storage nodes. When compared with related protocols, we show through simulation that Proflex has an acceptable performance under message loss scenarios, decreases the overhead of transmitted messages, and decreases the occurrence of the energy hole problem. Moreover, we propose an improvement that allows the protocol to leverage the inherent data correlation and redundancy of wireless sensor networks in order to decrease even further the protocol’s overhead without affecting the quality of the data distribution by storage nodes.  相似文献   
9.
High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.  相似文献   
10.
本文基于SOI技术,开发了一款新型的600V/0.3A 6-pack IGBT/MOSFET驱动器芯片.此款名为6ED003L06-F的芯片集成了三相电平转换、门极驱动和电路保护等诸多特性,在缩小芯片尺寸的同时也提高了性能,例如抗反相瞬态电压的鲁棒性等。另外,本文还利用该SOI驱动芯片开发了SmartPACK/SmartPIM系列新型IPM模块,该模块在一块基于DCB层的底板上集成了SOI驱动器,600V IGBT3和自举功能,并且无须支承板。这种IPM可对应6A-12A的额定电流,同时具有结构紧凑、成本低廉、操作简单等优点,适用于各类小功率驱动特别是消费类驱动应用。  相似文献   
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