Longitudinal elastic waves in columns due to earthquake motion

An analysis is presented of longitudinal waves in a thin elastic column. Velocity is specified at one end, and the boundary condition at the other end is expressed in terms of a range of effective impedances of an attached structure. Propagation, reflection and interference of the waves are followed by the method of characteristics. Integration of differential equations along characteristics yields the wave-induced stress, which is then applied to problems of earthquake excitation. Numerical examples are given for recorded updown ground motion of the Kobe Earthquake.     

STRUCTURE FORMATION OF COATED FILMS WITH DISPERSED PIGMENTS DURING DRYING

In the drying of coated films with dispersed pigments, such as floppy disks, the structure of the film is formed during the drying process and depends on the drying condition. It is important to understand the structure formation during drying for the design of the dryer and die better quality of the product. We measured die drying characteristics of the film and determined the structure of dried film experimentally. A qualitative model for the structure formation during drying of the coated film is suggested.     

Characteristics and classification of high-current fault arcs on distribution systems

When a fault occurs on transmission or distribution systems due to lightning or overvoltage, often an arc discharge occurs at the fault point. The arc discharge, which is caused by a fault current, has a high current, high temperature, strong light emission, etc., thus it sometimes causes heavy damages to electric power equipment. The arc discharge is influenced by the conditions around the arcs, i.e., gas, insulation materials, gap length, weather, etc. Also, the arc voltage along the arc column indicates the characteristics of the arc. If the voltage waveforms of the arcs caused by the fault on transmission or distribution systems are classified, it is possible to find the location and the equipment where the fault occurred. In this paper, the arc voltage data in 6-kV class XLPE cables and 6-kV class overhead lines are analyzed and an artificial neural network method is applied to classify the arc voltage waveforms. The results obtained from the six artificial neural networks developed show that the artificial neural network method is effective for classification of arc voltage waveforms if adequate input parameters are selected.     

Predicted and observed initial short circuit current for lead-acid batteries

Initial short circuit currents have been observed using our electronic short circuit switch and also predicted from terminal voltage and ohmic resistance according to Ohm's law for several kinds of lead-acid batteries in various states-of-charge. Ohmic resistance was measured by the d.c. step and the a.c. impedance methods. The predicted and the observed values have been compared in order to establish a prediction method for initial short circuit current. A good agreement was obtained, the root mean square percentage deviation of the predicted value from that observed being only 219%, which confirms the validity of the prediction method for the initial short circuit current.     

Highly Stable Au Nanoparticles with Tunable Spacing and Their Potential Application in Surface Plasmon Resonance Biosensors

Colloidal Au‐amplified surface plasmon resonance (SPR), like traditional SPR, is typically used to detect binding events on a thin noble metal film. The two major concerns in developing colloidal Au‐amplified SPR lie in 1) the instability, manifested as a change in morphology following immersion in organic solvents and aqueous solutions, and 2) the uncontrollable interparticle distance, determining probe spacing and inducing steric hindrance between neighboring probe molecules. This may introduce uncertainties into such detecting techniques, degrade the sensitivity, and become the barricade hampering colloidal Au‐based transducers from applications in sensing. In this paper, colloidal Au‐amplified SPR transducers are produced by using ultrathin Au/Al₂O₃ nanocomposite films via a radio frequency magnetron co‐sputtering method. Deposited Au/Al₂O₃ nanocomposite films exhibit superior stability, and average interparticle distances between Au nanoparticles with similar average sizes can be tuned by changing surface coverage. These characteristics are ascribed to the spacer function and rim confinement of dielectric Al₂O₃ and highlight their advantages for application in optimal nanoparticle‐amplified SPR, especially when the probe size is smaller than the target molecule size. This importance is demonstrated here for the binding of protein (streptavidin) targets to the probe (biotin) surface. In this case, the dielectric matrix Al₂O₃ is a main contributor, behaving as a spacer, tuning the concentration of Au nanoparticles, and manipulating the average interparticle distance, and thus guaranteeing an appropriate number of biotin molecules and expected near‐field coupling to obtain optimal sensing performance.     

Scalable 10 Gbit/s 4×20.25 μm CMOS/SIMOX ATM switch LSIcircuit based on distributed contention control

A scalable 10 Gbit/s 4×2 ATM switch LSI circuit has been fabricated. It employs a new distributed contention control technique that makes the LSI circuit expandable. To increase the LSI circuit throughput, 0.2 μm CMOS/SIMOX (separation by implanted oxygen) technology is used. It allows the LSI circuit to offer 221 I/O pins, an operating speed of 1.25 Gbit/s and 7 W power consumption     

A 10-Gb/s (1.25 Gb/s×8)4×2 0.25-μm CMOS/SIMOX ATMswitch based on scalable distributed arbitration

This paper presents the design and implementation of a scalable asynchronous transfer mode switch. We fabricated a 10-Gb/s 4×2 switch large-scale integration (LSI) that uses a new distributed contention control technique that allows the switch LSI to be expanded. The developed contention control is executed in a distributed manner at each switch LSI, and the contention control time does not depend on the number of connected switch LSI's. To increase the LSI throughput and reduce the power consumption, we used 0.25-μm CMOS/SIMOX (separation by implanted oxygen) technology, which enables us to make 221 pseudo-emitter-coupled-logic I/O pins with 1.25-Gb/s throughput. In addition, power consumption of 7 W is achieved by operating the CMOS/SIMOX gates at -2.0 V. This consumption is 36% less than that of bulk CMOS gates (11 W) at the same speed at -2.5 V. Using these switch LSI's, an 8×8 switching multichip module with 80-Gb/s throughput was fabricated with a compact size     

640-Gb/s high-speed ATM switching system based on 0.25-μm CMOS,MCM-C, and optical WDM interconnection

A 640-Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM-C, 0.25-μm CMOS, and optical wavelength-division-multiplexing (WDM) interconnection is fabricated for future broadband backbone networks. A 40-layer, 160×114 mm ceramic MCM forms the basic ATM switch module with 80-Gb/s throughput. It consists of 8 advanced 0.25-μm CMOS LSIs and 32 I/O bipolar LSIs. The MCM has a 7-layer high-speed signal line structure having 50-Ω strip lines, high-speed signal lines, and 33 power supply layers formed using 50-μm thick ceramic layers to achieve high capacity. A uniquely structured closed-loop-type liquid cooling system for the MCM is used to cope with its high power dissipation of 230 W. A three-stage ATM switch is made using the optical WDM interconnection between high-performance MCMs. For WDM interconnection, newly developed compact 10-Gb/s, 8-WDM optical transmitter and receiver modules are used. These modules are each only 80×120×20 mm and dissipate 9.65 W and 22.5 W, respectively. They have a special chassis for cooling, which contains high-performance heat-conductive plates and micro-fans. An optical WDM router based on an arrayed waveguide router is used for mesh interconnection of boards. The optical WDM interconnect has 640-Gb/s throughput and simple interconnection     

Development of 170 GHz/500 kW gyrotron

A development of 170GHz/500kW level gyrotron was carried out as R&D work of ITER. The oscillation mode is TE_31,8. In a short pulse experiment, the maximum power of 750kW was achieved at 85kV/40A. The efficiency was 22%. In the depressed collector operation, 500kW/36%/50ms was obtained. The maximum efficiency of 40% was obtained at P_RF=470kW whereas the power decrease by the electron trapping was observed. Pulse extension was done up to 10s at P_RF=170kW with the depressed collector operation. The power was limited by the temperature increase of the output window.