A new voltage control equipment using fuzzy inference

Power system control equipment needs higher sensitivity and operational reliability. Advanced voltage control equipment is needed for reducing the frequency of tap changes and improving the characteristics (the relationship between the actual voltage and reference voltage) of the voltage to meet today's power system requirements. However, these objectives are in a trade-off relationship. Studies of voltage control derived from a knowledge base suitable for electric power systems can satisfy these objectives using fuzzy inference. Compared with corresponding conventional equipment, the new equipment improved the deviation of 30 min average voltage of 30 percent. This paper describes the design concept of new voltage control equipment using fuzzy inference. In addition, field test results are described along with rules of fuzzy inference, membership functions, and the deviation of 30 min average voltage through detailed simulation.     

Synthesis of Nanohole‐Structured Single‐Crystalline Platinum Nanosheets Using Surfactant‐Liquid‐Crystals and their Electrochemical Characterization

Nanohole‐structured single‐crystalline Pt nanosheets have been synthesized by the borohydride reduction of Na₂PtCl₆ confined to the lyotropic liquid crystals (LLCs) of polyoxyethylene (20) sorbitan monooleate (Tween 80) with or without nonaethylene‐glycol (C₁₂EO₉). The Pt nanosheets of around 4–10 nm in central thickness and up to 500 nm or above in diameter have a number of hexagonal‐shaped nanoholes ∼1.8 nm wide. High‐resolution electron microscope images of the nanosheets showed atomic fringes with a spacing of 0.22 nm indicating that the nanosheets are crystallographically continuous through the nanoholed and non‐holed areas. The inner‐angle distributions for the hexagonal nanoholes indicate that the six sides of the nanoholes are walled with each two Pt (111), Pt (1 1) and Pt (010) planes. The formation mechanism of nanoholed Pt nanosheets is discussed on the basis of structural and compositional data for the resulting solids and their precursory LLCs, with the aid of similar nanohole growth observed for a Tween 80 free but oleic acid‐incorporated system. It is also demonstrated that the nanoholed Pt nanostructures loaded on carbon exhibit fairly high electrocatalytic activity for oxygen reduction reaction and a high performance as a cathode material for polymer‐electrolyte fuel cells, along with their extremely high thermostability revealed through the effect of electron‐irradiation.     

Numerical Analysis of the Boundary Scattering Effect on Transport Properties in Bi-Sb Nanowires

In this study, we have numerically analyzed the transport properties of Bi-Sb nanowires, taking into account wire boundary scattering. Wire boundary scattering slightly decreased the Seebeck coefficient of Bi-Sb nanowires. This effect is due to the observation that boundary scattering and the mobility ratio of L-point electrons to T-point holes in the nanowires are smaller than those in bulk Bi-Sb because the wire boundary scattering suppresses the mobilities of L-point electrons and heavy holes. The largest Seebeck coefficient for all wire diameters was obtained when the Sb concentration was 5 at.%. The effective mass approached zero near 5 at.% Sb, and the small effective mass led to a large subband shift in each band. Thus, a small effective mass enhances the quantum effect at a fixed wire diameter, even if wire boundary scattering is taken into account.     

Development of 170 GHz/500 kW gyrotron

A development of 170GHz/500kW level gyrotron was carried out as R&D work of ITER. The oscillation mode is TE_31,8. In a short pulse experiment, the maximum power of 750kW was achieved at 85kV/40A. The efficiency was 22%. In the depressed collector operation, 500kW/36%/50ms was obtained. The maximum efficiency of 40% was obtained at P_RF=470kW whereas the power decrease by the electron trapping was observed. Pulse extension was done up to 10s at P_RF=170kW with the depressed collector operation. The power was limited by the temperature increase of the output window.     

Thin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory

Polymer ferroelectric-gate field effect transistors (Fe-FETs) employing ferroelectric polymer thin films as gate insulators are highly attractive as a next-generation non-volatile memory. For minimizing gate leakage current of a device which arises from electrically defective ferroelectric polymer layer in particular at low operation voltage, the materials design of interlayers between the ferroelectric insulator and gate electrode is essential. Here, we introduce a new solution-processed interlayer of conductive reduced graphene oxides (rGOs) modified with a conjugated block copolymer, poly(styrene-block-paraphenylene) (PS-b-PPP). A FeFET with a solution-processed p-type oligomeric semiconducting channel and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) insulator exhibited characteristic source–drain current hysteresis arising from ferroelectric polarization switching of a PVDF-TrFE insulator. Our PS-b-PPP modified rGOs (PMrGOs) with conductive moieties embedded in insulating polymer matrix not only significantly reduced the gate leakage current but also efficiently lowered operation voltage of the device. In consequence, the device showed large memory gate voltage window and high ON/OFF source–drain current ratio with excellent data retention and read/write cycle endurance. Furthermore, our PMrGOs interlayers were successfully employed to FeFETs fabricated on mechanically flexible substrates with promising non-volatile memory performance under repetitive bending deformation.     

Electron Holography Studies on Narrow Magnetic Domain Walls Observed in a Heusler Alloy Ni50Mn25Al12.5Ga12.5

Peculiar magnetic domain walls produced in Heusler alloys, which have attracted renewed interest due to their potential application to actuators and spintronic devices, are studied here using electron holography. The observations reveal unexpectedly narrow magnetic domain walls, the width of which showed perfect agreement with that of the antiphase boundaries (APB, e.g., only 3 nm). While the results can be explained by the significant depression of ferromagnetism due to the local chemical disorder, the electron phase shift indicates that ferromagnetic correlation still remains in the APB region.     

A New Public-Key Cryptosystem over a Quadratic Order with Quadratic Decryption Time

We present a new cryptosystem based on ideal arithmetic in quadratic orders. The method of our trapdoor is different from the Diffie—Hellman key distribution scheme or the RSA cryptosystem. The plaintext m is encrypted by mp ^r , where p is a fixed element and r is a random integer, so our proposed cryptosystem is a probabilistic encryption scheme and has the homomorphy property. The most prominent property of our cryptosystem is the cost of the decryption, which is of quadratic bit complexity in the length of the public key. Our implementation shows that it is comparably as fast as the encryption time of the RSA cryptosystem with e=2 ¹⁶ +1 . The security of our cryptosystem is closely related to factoring the discriminant of a quadratic order. When we choose appropriate sizes of the parameters, the currently known fast algorithms, for example, the elliptic curve method, the number field sieve, the Hafner—McCurley algorithm, are not applicable. We also discuss that the chosen ciphertext attack is not applicable to our cryptosystem. Received 29 June 1998 and revised 15 November 1998     

Modification of physicochemical properties of actin filaments suppresses cell fragmentation in the execution phase of staurosporine-induced apoptotic processes

Effects of jasplakinolide (JSP), a stabilizer of F-actin, and latrunculin A (LTA), a destabilizer of F-actin, on a series of events occurring in the execution phase of staurosporine (STS)-induced apoptotic processes were studied using human osteosarcoma 143B cells. Time-dependent apparent increases of the population of cells with collapsed membrane potential of mitochondria (Delta Psi(m)) caused by STS treatment were not due to actual decreases in the Delta Psi(m) per cell, but due to the fragmentation of cells resulting in decreases in the number of active mitochondria per cell. Decreases in the Delta Psi(m) in fragmented cells occurred late in the execution phase. Both JSP and LAT failed to prevent STS-induced release of cytochrome c from mitochondria followed by the activation of caspases 3 and 9, the cleavage of poly (ADP-ribose) polymerase (PARP) and apoptotic nuclear fragmentation. However, both drugs prevented STS-induced apoptotic cell fragmentation and decreases in the Delta Psi(m). These results indicate that physicochemical states of actin filaments play a certain role in the execution phase of STS-induced apoptotic processes.     

Evaluation of TEM samples of an Mg-Al alloy prepared using FIB milling at the operating voltages of 10 kV and 40 kV

Transmission electron microscopy (TEM) samples of an Mg-Al alloy has been prepared using a Ga-focused ion beam (FIB) milling at two different operating voltages of 10 kV and 40 kV to investigate the influence of the FIB energy on the sample quality. The fine structures of the samples have been studied using a high resolution TEM, and the concentration of the implanted Ga was analysed using an energy dispersive X-ray (EDX) analysis. The result of the TEM observation revealed that point defects were introduced to the sample finally milled at 40 kV but not at 10 kV. However, crystal lattice images and electron diffraction patterns were clearly observed on both the samples. The typical influence of the FIB energy was indicated in the elemental analysis. The relative Ga concentration in the thin sample finally milled at 10 kV was 1.0-2.0 at% that is less than half of 4.0-6.0 at% of the Ga concentration in the sample finally milled at 40 kV. A comparison between the experimental results of the Ga concentration measurement with simulation was also discussed.     

D‐A1‐D‐A2 Backbone Strategy for Benzobisthiadiazole Based n‐Channel Organic Transistors: Clarifying the Selenium‐Substitution Effect on the Molecular Packing and Charge Transport Properties in Electron‐Deficient Polymers

Unipolar n‐type semiconducting polymers based on the benzobisthiadiazole (BBT) unit and its heteroatom‐substituted derivatives are for the first time synthesized by the D‐A₁‐D‐A₂ polymer‐backbone design strategy. Selenium (Se) substitution is a very effective molecular design, but it has been seldom studied in n‐type polymers. In this study, within the similar conjugated framework, the Se substitution effects on the optical, electrochemical, solid‐state polymer packing, electron mobility, and air‐stability of the target unipolar n‐type polymers are unraveled. Replacing the sulfur (S) atom in the thiadiazole heterocycles with the Se atom leads to narrower bandgaps and deeper lowest unoccupied molecular orbital (LUMO) levels of the n‐type polymers. Furthermore, the Se‐substituted polymer (pSeN‐NDI) shows shorter lamellar packing distances and stronger edge‐on π–π stacking interactions than its S‐counterpart (pSN‐NDI), as observed by the two‐dimensional grazing‐incidence wide‐angle X‐ray scattering (GIWAXS) patterns. With the deeper LUMO level and thin‐film microstructures suitable for transistors, pSeN‐NDI exhibits four‐fold higher electron mobilities (μ_e) than pSN‐NDI. However, the other Se‐containing polymer, pSeS‐NDI, forms rather amorphous film structures, which is caused by its limited thermal stability and decomposition during the thermal annealing processes, thus giving rise to a lower μ_e than its S‐counterpart (pBBT‐NDI). Most importantly, pBBT‐NDI demonstrates an electron mobility of 0.039 cm² V^?1 s^?1, which is noticeable among the unipolar n‐type polymers based on the BBT and its analogs.