Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

用于控制变速电动机的功率模块

改善洗衣机、电冰箱以及空调等家用电器能源使用效率的需求正在增加。从传统的固定转速马达转换到变速马达可以节省能耗30％之多。但这种设计的难度较大，虽已经出现了几种方案来降低此类项目的数字设计工作难度，但是设计人员仍需要集成模块和相关的设计工具来促进功率级的设计。为了使低成本变速马达控制器成为可能，元器件供应商设法通过简化设计和降低结构复杂度来减少变速控制器的成本。例如，已经出现了几种数字信号控制平台，它们结合了DSP和集成PWM和马达控制外围设备的RISC处理器。这些平台可运行第三方或者自行开发的马达控制算法。     

A Convenient Synthesis of Some Coumarin Derivatives Using SnCl2 · 2H2O as Catalyst

Some substituted coumarins have been synthesized by von-Pechmann condensation using SnCl₂ · 2H₂O (10 mol %) as catalyst in ethanolic medium. The reactions are simple, easy in handling and environmentally benign.     

Lipid free radical generation and brain cell membrane alteration following nitric oxide synthase inhibition during cerebral hypoxia in the newborn piglet

Nitric oxide (NO) is reported to cause neuronal damage through various mechanisms. The present study tests the hypothesis that NO synthase inhibition by N(omega)-nitro-L-arginine (NNLA) will result in decreased oxygen-derived free radical production leading to the preservation of cell membrane structure and function during cerebral hypoxia. Ten newborn piglets were pretreated with NNLA (40 mg/kg); five were subjected to hypoxia, whereas the other five were maintained with normoxia. An additional 10 piglets without NNLA treatment underwent the same conditions. Hypoxia was induced with a lowered FiO2 and documented biochemically by decreased cerebral ATP and phosphocreatine levels. Free radicals were detected by using electron spin resonance spectroscopy with a spin trapping technique. Results demonstrated that free radicals, corresponding to alkoxyl radicals, were induced by hypoxia but were inhibited by pretreatment with NNLA before inducing hypoxia. NNLA also inhibited hypoxia-induced generation of conjugated dienes, products of lipid peroxidation. Na+,K+-ATPase activity, an index of cellular membrane function, decreased following hypoxia but was preserved by pretreatment with NNLA. These data demonstrate that during hypoxia NO generates free radicals via peroxynitrite production, presumably causing lipid peroxidation and membrane dysfunction. These results suggest that NO is a potentially limiting factor in the peroxynitrite-mediated lipid peroxidation resulting in membrane injury.     

Freestanding Alumina Membrane by Double-Layer Anodization

A novel method has been developed for fabricating full or partial freestanding anodic alumina. In our method a sacrificial metal layer is introduced between an Al film and a Si₃N₄ substrate. A freestanding alumina film at wafer scale is successfully achieved by anodizing the double metal layer, during which the alumina is spontaneously stripped off the Si₃N₄ substrate due to the anodic oxidation of the sacrificial layer. The barrier oxide of the alumina film is effectively removed either by H₃PO₄ dissolution or by CF₄ reactive ion etching. The freestanding alumina film is utilized as a contact mask to transfer its nanoporous pattern to a Si substrate. By patterning the sacrificial metal layer with contact lithography, a partial freestanding alumina film is successfully achieved on the silicon chip, producing a unique micro/nanofluidic channel. Compared with previous techniques, the method reported here is advantageous for its simplicity and flexibility     

A radix-8 wafer scale FFT processor

Wafer Scale Integration promises radical improvements in the performance of digital signal processing systems. This paper describes the design of a radix-8 systolic (pipeline) fast Fourier transform processor for implementation with wafer scale integration. By the use of the radix-8 FFT butterfly wafer that is currently under development, continuous data rates of 160 MSPS are anticipated for FFTs of up to 4096 points with 16-bit fixed point data.     

Simulation of leachate migration in leaky aquifers

A two-dimensional cross-section finite difference model is presented to simulate density dependent leachate migration in leaky aquifers. Unlike existing models, a new approach is adopted to couple the groundwater-flow equation and the hydrodynamic dispersion equation with the elimination of the intermediate step of calculating velocities. The concept of the reference density is employed, permitting increased accuracy (over pressure-based models) in the representation of the transport process. The model is then used to study the effect of several hydraulic and transport parameters on the flow pattern and plume migration which are found to be very sensitive to most of these parameters. Equiconcentration and equipotential lines are overlapped to provide a better understanding of the coupling effect.