Phosphonitrilic chloride: 37. Reaction of 1,1-diamino-3,3,5,5-tetrakis (2,2,2-trifluoroethoxy) cyclotriphosphazene with organosilanes

The Spiro compound N₃P₃(OCH₂CF₃)₄(NH)₂Si(CH₃)₂ formed by reaction of 1,1-diamino-3,3,5,5-tetrakis(2,2,2-trifluoroethoxy)cyclotriphosphazene N₃P₃(OCH₂CF₃)₄(NH₂)₂ and dimethyldichlorosilane Cl₂Si(CH₃)₂ is a yellow or orange coloured oil soluble in organic solvents, vapourized at 160°C without decomposition, and not hydrolysed appreciably in boiling water. Linear compounds are formed by reaction of N₃P₃(OCH₂CF₃)₄(NH₂)₂ with diphenyldichlorosilane or phenyltrichlorosilane owing to hindrance of the phenyl radical. These compounds are amorphous or tacky solids, soluble in organic solvents and stable to water.     

Synthesis and properties of poly (organophosphazenes) ionomers [NP(HNC6H5)2−(x+y)(HNC6H4SO3H) x (HNC6H4SO3Li) y ] n

Poly(anilino sulphamicphosphazenes) such as [NP(HNC₆H₅)_2–x (HNC₆H₄SO₃H) _x ] _n for polymer (I) x=0.3 and for polymer (II) x=0.8 were prepared by the reaction of poly(anilinophosphazene) [NP(HNC₆H₅)₂] _n and sulphonic chloride HSO₃Cl in tetrachloroethane solvent several timeS. Also, H protons in the polymer (I) and (II) were prepared from lithum hydroxide in aqueous solution. It was found, by chemical analysis, that the product prepared with (I) and (II) had compositions such as [NP(HNC₆H₅)_1.7 (HNC₆H₄SO₃H)_0.1(HNC₆H₄SO₃Li)_0.2] _n (III) and [NP(HNC₆H₅)_1.2(HN-C₆H₄SO₃Li)_0.8] _n (IV). Also, the resistivity of products (III) and (IV) were determined and found to be 3.3×10⁷ and 1.5×10⁷ cm^–1, respectively.     

Measurement of RF Transmission Mode in ITER Relevant EC H&;CD Transmission Line

The preliminary results of mode measurement in the ITER relevant 40 m long transmission test line composed from 63.5 mm diameter corrugated waveguides and miter bends are presented. The field patterns were measured by taking temperature profiles on a paper screen placed in front of the waveguide end using an infrared imaging camera. The complex electric field at the waveguide end was retrieved from the measured temperature profiles. As a result, the transmission power includes 87% of HE₁₁ mode and 6% of LP₁₁ odd (HE₂₁+TE₀₁) mode and small ratios of other modes. The mode content had small dependence on length of the transmission line. This result indicated that the higher order mode content generated at the input of the transmission line is conserved and propagated through the transmission line. This suggests that the initial RF coupling to the waveguide is critical since it affects the launcher efficiency.     

Characterization of Distribution of Trap States in Silicon-on-Insulator Layers by Front-Gate Characteristics in n-Channel SOI MOSFETs

We characterized the distribution of trap states in silicon-on-insulator (SOI) layers in epitaxial layer transfer (ELTRAN) wafers and in low-dose separation by implanted oxygen (SIMOX) wafers. We measured the front- and back-gate characteristics of MOSFETs with SOI layers of different thicknesses. We used the current-Terman method to estimate the trap states at the gate oxide (GOX)/SOI interface and at the SOI/buried oxide (BOX) interface separately. As a result, we concluded that the high-density trap states in the SOI layers in SIMOX wafers cause a gate-voltage shift, which is attributed to the charged trap states only in the inversion layer. We also found that the trap states are distributed within about 30 nm from the SOI/BOX interface in the SOI layer in SIMOX wafers, which indicates that the distribution of trap states originates from the oxygen implantation that is peculiar to the SIMOX process.     

A high-density low on-resistance trench lateral power MOSFET with a trench bottom source contact

A novel trench lateral power MOSFET with a trench bottom source contact (TLPM/S) is proposed, fabricated, characterized, and compared with the equivalent TLPM with a trench bottom drain contact (TLPM/D). The TLPM/S is formed along the sidewalls of the trenches so as to reduce the device pitch and realize very small on-resistance per unit area. A total of eight masks are used for fabricating the device. Since the gate electrode and the trench bottom source contact are formed by self-aligning to the trench sidewalls, the device pitch is reduced. Using a line width of 0.6 /spl mu/m, the fabricated TLPM/S, whose device pitch is 3.0 /spl mu/m, exhibits a specific on-resistance of 60 m/spl Omega/-mm/sup 2/ for a breakdown voltage of 73 V, which is close to the estimated silicon limit for this voltage class of devices. Due to reduced Miller capacitance, the TLPM/S exhibits excellent switching performance, and is approximately 50% faster than the equivalent TLPM/D.     

Validation of temporal BRDFs of paddy fields estimated from MODIS reflectance data

The effect of the bidirectional reflectance distribution function (BRDF) is one of the most important factors in correcting and validating the reflectance obtained from remotely sensed data. While the importance of BRDF has become widely recognized, bidirectional reflectance factor (BRF) data measured for correction and validation are insufficient because of the technical difficulty of the measurement. The primary objective of the present research is to estimate BRDF effects from Moderate Resolution Imaging Spectroradiometer (MODIS) data. Temporal ground-based BRDFs of rice paddy fields were estimated from ground measurements conducted in June and August 2002. MODIS-derived BRDFs obtained from MODIS reflectance data and ground-based BRDFs were estimated using the reciprocal form of the RossThick and LiSparse (RossThick-LiSparse-R) kernels, a semiempirical BRDF model adopted for the operational MODIS BRDF product. The MODIS-derived band 1 (620-680 nm) and band 2 (841-876 nm) BRDFs were compared with the ground-based BRDFs corresponding to the same waveband, respectively. The comparison results demonstrate that BRDFs of paddy fields change in accordance with paddy growth and that MODIS-derived BRDFs are closely related to ground-based BRDFs in most of the cases. It was also revealed that MODIS-derived BRDFs can be estimated to a high degree of accuracy when MODIS data necessary for the estimation are available.     

Mobile satellite CDMA system robust to Doppler shift

This paper suggests a dual-channel PSK demodulator for LEO satellite DS/CDMA communications, whose performance is absolutely invariant to time-variant Doppler offset of a carrier and local oscillator instability. The demodulator does not require any preamble (pilot signal) for carrier recovery, differential encoder/decoder, and carrier recovery circuit such as PLL and Costas loop, thereby resulting in high transmission efficiency and system complexity reduction. In a CDMA channel with the demodulator, the transmitted CDMA signal is composed of two orthogonal linear polarized components, which are spread by different spreading codes, and only one of which is modulated by the data stream. At the receiver, one of the two components despread by the corresponding matched-filter is utilized as a pilot reference carrier for the demodulation. Thereby, the Doppler offset is completely eliminated from the received signal since both these components exhibit the same Doppler and local oscillator instability     

ASYMPTOTIC EXPANSIONS FOR THE DISTRIBUTION OF AN ESTIMATOR IN THE FIRST-ORDER AUTOREGRESSIVE PROCESS

Abstract. In this paper, two asymptotic expansions for the distribution for an estimator of the parameter in a first-order autoregressive process are derived, according to two situations. Some well known estimators are special cases of the estimator discussed here. The series expansions are carried to terms of order T ^-1.