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<正> 甲基托布津(以下简称TM)是一种高效内吸性杀菌剂。其微量测定法已有三种:①薄层分析法;②高压液体色谱法;③紫外光谱法。其中①法精确度低,②、③法均需贵重的仪器设备,一般实验室难以满足,且紫外光谱法还得将样品用一定试剂进行较长时间处理,待TM转化成降解产物后再行测定,操作手续繁,分析周期长。为此,研究制定简单易行的TM分光光度测定法显得尤有必要。 相似文献
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在岩石巴西劈裂试验中,垫条直径直接影响岩石抗拉强度的大小。为此,选取典型砂岩试样,进行了1.3 mm、1.8 mm、2.3 mm、2.9 mm、3.5 mm、4.0 mm 6种垫条直径的巴西劈裂试验。研究结果表明:(1)钢丝垫条直径从1.3 mm增大到4.0 mm,砂岩劈裂抗拉强度呈“减小—稳定—增大”的非单调变化规律,总体可以分为三个阶段,其中,垫条比为0.026~0.046、0.058~0.081时,砂岩的抗拉强度试验结果变化幅度较大,而且离散性比较明显;垫条比为0.046~0.058时,砂岩的抗拉强度趋于稳定,而且,试验结果离散性明显较小,破裂面平直,垫条对岩样的劈裂张拉破坏起到很好的导向控制作用。(2)钢丝垫条直径对岩石抗拉强度及破坏模式的影响,实际上是垫条直径与矿物颗粒粒径相互关系的影响,从试验结果来看,当垫条比为0.046~0.058时,也即垫条直径与矿物颗粒粒径比值在5.750~7.250时,试验得到的岩石劈裂抗拉强度比较稳定,离散性较小。因此,在岩石巴西劈裂试验中,建议根据岩石矿物颗粒大小选取合适的垫条直径,以保证试验结果的合理性和准确性。 相似文献
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The FTO/TiO2 seed layer/TiO2 nanorods were prepared by ion beam deposition and hydrothermal methods. Under UV light, the photocurrent density of FTO/TiO2 seed layer/TiO2 nanorods can reach 1.39 mA/cm2, which is higher than that without seed layer and nanorods structure. Not only that, the FTO/TiO2 seed layer/TiO2 nanorods can also adsorb visible light, which overcomes the defect that traditional TiO2 can not absorb visible light. The photocurrent density of FTO/TiO2 seed layer/TiO2 nanorods can reach 0.21 mA/cm2 under visible light. The increased performance resulted from the deposition of the TiO2 seed layer, which can reduce the band gap of TiO2. FTO/TiO2 seed layer/TiO2 nanorods also exhibited high photodegradation ability for organic pollutant methylene blue (MB). Within 120 min, 77.3% MB can be degraded, and the degradation rates remained almost unchanged after four cycles. Not only that, compared with powdered photocatalysts, FTO/TiO2 seed layer/TiO2 nanorods is easy to recover, and it can be reused by rinsing it with water several times and drying it naturally after the reaction. 相似文献
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串行通信控制器SCCs是MPC860T最强大的通信处理模块。通过配置QMC协议,使标准情况下只支持一条逻辑通道的SCC可以支持多达64条逻辑通道,进而支持具有广泛应用的E1/T1多时隙链路。本文阐述了MPC860T的SCC接口工作原理和QMC协议,重点研究了在SCC上实现QMC协议的基本设计方法及具体实现过程,并给出了主要功能函数的设计流程。 相似文献
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Gallium oxide(Ga2O3) thin films were prepared on Si substrate by magnetron sputtering. The obtained samples were comprehensively characterized by X-ray photoelectron spectroscopy(XPS) and scanning electron microscope(SEM). Ti, Pt, Ni and AZO were deposited on the Ga2O3 thin films as electrodes. This paper mainly studies the metal-semiconductor contact formed by these four materials on the films and the influence of annealing at 500℃ on the metal-semiconductor contact. The I-V characteristics show a good linear relationship, which indicates ohmic contact between Ga2O3 and other electrodes. 相似文献
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