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报导了一种专门为MBE生长而设计的计算机控制系统,改善并扩展了原控制单元SentinelⅢ的功能,并展示了由它控制生长的各种SiGe结构。 相似文献
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The surface states of Al0.7Ga0.3As(100) were studied by angle resolved ultraviolet photoelectron spectroscopy. It is first found that there exist two surface states on Al0.7Ga0.3As(100) surface, which can be removed by the adsorption of 1500L hydrogen. The evolution of these two surface states with thermal annealing was investigated. These two surface states were well developed by the annealing at 450℃. The ARUP spectra were measured to study their energy dispersions in k space. These results are discussed and compared with those of the GaAs(100)c(4×2) surface. 相似文献
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叙述用硫钝化GaAs表面的研究动态,包括表面处理工艺,已取得的效果及表面钝化的机理,并指出今后的研究内容。 相似文献
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利用局域分子束外延技术生长了含有SiGe量子阱的岛状结构。实现了生长的岛状结构侧面不与掩模材料相接触。这种含有量子阱的岛状结构具有比相同结构量子阱强20多倍的光致发光强度。 相似文献
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对进口ADES-400型角分辨电子能谱仪的计算机控制录谱系统进行了改造,使谱仪增加了高分辨电子能量损失谱(HREELS)的计算机控制录谱功能,并且使HREELS谱的灵敏度提高了近两个数量级。 相似文献
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X-ray photoelectron spectroscopy(XPS), ultraviolet photoelectron spec-troscopy (UPS) and high resolution electron energy loss spectroscopy (HREELS)are used to s tudy aluminum deposition on the GaP(111) surface prepared by ioa sputtering followed by thermal annealing. Because of the very limited thickness of Al overlayer, only the initial stage of Al/GaP (111) interface formation is investigated. At this stage, a Ga/Al replce-ment reaction has already been induced, forming an AIP overlayer covered with segragated Ga atoms. The interband transition of 1.7eV found on the clean GaP(l11) surface is removed, Evidences on the changes of valence band structure are studied and discussed carefully. 相似文献
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