全文获取类型
收费全文 | 1032篇 |
免费 | 29篇 |
国内免费 | 3篇 |
专业分类
电工技术 | 69篇 |
化学工业 | 236篇 |
金属工艺 | 42篇 |
机械仪表 | 20篇 |
建筑科学 | 29篇 |
能源动力 | 56篇 |
轻工业 | 114篇 |
水利工程 | 1篇 |
石油天然气 | 2篇 |
无线电 | 67篇 |
一般工业技术 | 252篇 |
冶金工业 | 69篇 |
原子能技术 | 19篇 |
自动化技术 | 88篇 |
出版年
2023年 | 5篇 |
2022年 | 13篇 |
2021年 | 20篇 |
2020年 | 15篇 |
2019年 | 7篇 |
2018年 | 22篇 |
2017年 | 15篇 |
2016年 | 16篇 |
2015年 | 9篇 |
2014年 | 23篇 |
2013年 | 79篇 |
2012年 | 48篇 |
2011年 | 65篇 |
2010年 | 48篇 |
2009年 | 51篇 |
2008年 | 65篇 |
2007年 | 58篇 |
2006年 | 44篇 |
2005年 | 40篇 |
2004年 | 36篇 |
2003年 | 42篇 |
2002年 | 30篇 |
2001年 | 16篇 |
2000年 | 20篇 |
1999年 | 27篇 |
1998年 | 23篇 |
1997年 | 29篇 |
1996年 | 22篇 |
1995年 | 17篇 |
1994年 | 17篇 |
1993年 | 11篇 |
1992年 | 12篇 |
1991年 | 12篇 |
1990年 | 10篇 |
1989年 | 15篇 |
1988年 | 9篇 |
1987年 | 8篇 |
1986年 | 9篇 |
1985年 | 8篇 |
1984年 | 8篇 |
1983年 | 5篇 |
1982年 | 4篇 |
1981年 | 5篇 |
1980年 | 8篇 |
1979年 | 5篇 |
1977年 | 4篇 |
1976年 | 2篇 |
1975年 | 2篇 |
1974年 | 2篇 |
1967年 | 1篇 |
排序方式: 共有1064条查询结果,搜索用时 187 毫秒
1.
Eicosapentaenoic acid (EPA) production by an oleaginous fungus Mortierella alpina expressing heterologous the Δ17‐desaturase gene under ordinary temperature 下载免费PDF全文
2.
Peter V. Sushko Alexander L. ShlugerKatsuro Hayashi Masahiro HiranoHideo Hosono 《Thin solid films》2003,445(2):161-167
Recently it has been discovered that a nano-porous main group oxide 12CaO·7Al2O3 (C12A7) can be converted from a wide-gap insulator to a good transparent conductor. Using ab initio modelling we explain good conductivity of this material by very small barriers for hopping of localised electrons between neighbouring positive cages. We show that optical absorption of C12A7 in infrared region and at energies higher than 2.7 eV is due to inter-cage and intra-cage electron transitions, respectively. The proposed mechanisms can be useful in further search for conducting transparent media. 相似文献
3.
Mitsuho Yoshida Takako Sugiki Eiji ૿ sawa 《Fullerenes, Nanotubes and Carbon Nanostructures》1996,4(5):1019-1026
Application of our net algorithm to the generation of all possible IPR isomers for giant fullerenes Cn, n=102 to 120, missed nine out of 39,621 possible structures. Analysis revealed that the omission of too small and too large cap triangles was the reason. Within the range of fullerenes studied, the missed structures are of high-energy and do not affect the distribution of significantly low-energy isomers. 相似文献
4.
Kenji Nomura Hiromichi OhtaKazushige Ueda Toshio Kamiya Masahiro HiranoHideo Hosono 《Thin solid films》2003,445(2):322-326
We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO3(ZnO)m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 105. The field-effect mobility increased from ∼1 to ∼10 cm2 (V s)−1 as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds. 相似文献
5.
Sh ichi sawa Eiji sawa Yü ji Hirose 《Fullerenes, Nanotubes and Carbon Nanostructures》1995,3(5):565-585
Initial steps of thermal transformation from doubly bonded [2+2] (1) and [4+4] (2) dimers of C60 have been analyzed on the basis of computed structural features and Pople's energy partition scheme. Completely conjugated C120 structures 3 and 4 are found to be considerably stable and proposed to be important intermediates. The linkage patterns in 3 and 4 are also likely to appear in the repeating units of the metastable dimer and polymer phases of A1 crystals. 相似文献
6.
Eiji Takeda 《Microelectronics Reliability》1993,33(11-12)
A universal guideline and state-of-the-art hot-carrier effects in scaled MOSFETs are reviewed and discussed from the viewpoints of 1) DC and AC hot-carrier effects, 2) hot-carrier detrapping phenomena, 3) mechanical stress effects on hot-carrier phenomena, and 4) hot-carrier resistant device structures.In the deep-submicron region, the hot-carrier applicable voltage is less than 3 V, so AC hot-carrier effects from the dynamic operation of actual circuits should be taken into account. Despite much experimentation and analysis, there is still no universally accepted theory that explain the AC degradation mechanism. This is because the noise caused by the wiring inductance in ULSI circuits and in measurement systems screens the intrinsic AC hot-carrier effects.Here, AC hot-carrier degradation enhanced by gate pulse-induced-noise is analyzed experimentally and theoretically. After eliminating the noise problem, it is found that AC hot-carrier degradation in LDD (Lightly doped drain) and GOLD (gate-drain overlapped device) structures can be estimated based on DC degradation in terms of the effective stress time which takes the duty ratio into account. In addition, it is found that the noise is negligible when the wiring inductance is smaller that 80 nH (250 mω), which is important for future circuit design.Furthermore, hot-carrier detrapping effects, especially in p-channel MOS devices, and hot-carrier phenomena under mechanical stress are investigated experimentally to better understand the underlying hot-carrier physics. Finally, future hot-carrier resistant device structures are discussed. 相似文献
7.
8.
Eiji Hoashi Takehiko Yokomine Tomoaki Kunugi 《International Journal of Heat and Mass Transfer》2003,46(21):4083-4095
This paper presents a numerical simulation of wave-type heat transfer phenomena propagating in an aluminum thin foil irradiated by a pulsed laser using the cubic interpolated propagation method coupled with a thermo-convective model. We did not use the two-step model and dual-phase lag model, which are generally known as the non-Fourier heat conduction law, but wave-type heat transfer phenomena could be observed by our method. The main characteristic of the method is to solve the governing equation including the equation of continuity, the equation of motion, the equation of energy and the equation of state. It is found that when the pulse duration is under the order of picosecond, the pure heat conduction is hardly observed and heat transfer toward the inside of materials occurs only by a thermal shock wave. The heat conduction mode after pulse laser irradiation is strongly dependent upon the value of total incident laser energy density Ein and the threshold value for pure heat conduction is 5.0 × 104 J/m2 for an aluminum. 相似文献
9.
Kazuhiko Honda Eiji ૿ sawa Zdenek Slanina Takatoshi Matsumoto 《Fullerenes, Nanotubes and Carbon Nanostructures》1996,4(5):819-834
As a continuation of the studies on thermal transformation of the [2+2] C60 dimer (1), the consequence of the pyracylene-rearrangement-like valence isomerization of the fulvalene partial structure at the bridge of the ring-opened product from 1, namely 2, was searched by dynamic reaction coordinate /AM1 semiempirical MO calculations. It is predicted that the fulvalene bridge of 2 rearranges into naphthalene partial structure by the concerted 'in-plane' mechanism to give a wide-bridged C120 intermediate having twenty five-membered rings and two ten-membered rings (3). The computed energy of activation (145 kcal/mol) is 40 kcal/mol lower than those computed for pyracylene rearrangements. In contrast, the recently reported analogous rearrangement of indigo (13) to dibenzonaphthyridindione (14) is computed to occur by the stepwise 'sp3' mechanism. 相似文献
10.
Manabu Ishitobi Takeshi Myoi Koji Soshin Eiji Hiraki Mutsuo Nakaoka 《Electrical Engineering in Japan》2005,153(3):79-87
This paper presents a single lossless inductive snubber‐assisted ZCS‐PFM series resonant DC‐DC power converter with a high‐frequency high‐voltage transformer link for industrial‐use high‐power magnetron drive. The current flowing through the active power switches rises gradually at a turned‐on transient state with the aid of a single lossless snubber inductor, and ZCS turn‐on commutation based on overlapping current can be achieved via the wide range pulse frequency modulation control scheme. The high‐frequency high‐voltage transformer primary side resonant current always becomes continuous operation mode, by electromagnetic loose coupling design of the high‐frequency high‐voltage transformer and the magnetizing inductance of the high‐frequency high‐voltage transformer. As a result, this high‐voltage power converter circuit for the magnetron can achieve a complete zero current soft switching under the condition of broad width gate voltage signals. Furthermore, this high‐voltage DC‐DC power converter circuit can regulate the output power from zero to full over audible frequency range via the two resonant frequency circuit design. Its operating performances are evaluated and discussed on the basis of the power loss analysis simulation and the experimental results from a practical point of view. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 153(3): 79–87, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20126 相似文献