Analysis of dinosaur samples by nuclear microscopy

Several dinosaur bone and eggshell fossil samples unearthed at different sites in China were analyzed by means of nuclear microscopy. Concentrations and distributions of elements such as Na, Mg, Al, P, S, Ca, Cr, Mn, Fe, Cu, Zn, As, Br, Sr, Y, Ce, Pb and U, etc. were obtained for each sample. The results of quantitative PIXE and RBS analyses show unusually high concentrations of U and Ce in several samples obtained from a period near the K-T boundary (between Cretaceous and Tertiary periods, 65 million years ago), suggesting that some form of environmental pollution could be the cause of dinosaur extinction.     

Surface morphology and nodule formation mechanism of cellulose acetate membranes by atomic force microscopy

By the use of atomic force microscopy (AFM), formation mechanism of nodular structure in cellulose acetate membranes was systematically investigated. Elementary factors affecting the nodule formation were delineated on the basis of both kinetic and thermodynamic considerations. It was shown that (1) the exact nature of nodular structure is thermodynamic equilibrium glassy state; nodular structure will vanish in the rubbery state; (2) the thermodynamic factor affecting nodule formation is the membrane formation temperature; with the membrane formation temperature decreasing, more chain segments are able to form nodular structures; (3) nodule formation is dependent on the segment rearrangement; variation of the solvent environment is the major kinetic factor affecting the segment rearrangement and nodule formation. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 88: 1328–1335, 2003     

An SVD-based adaptive robust speech steganography using MDCT coefficient

Multimedia Tools and Applications - Speech is one of the essential ways of communication. The study of speech steganography provides great value in information security. To improve imperceptibility...     

国内外不锈钢精炼剂研究发展现状

分析了精炼剂组元元素的作用能力，讨论并总结了精炼剂组元的复合作用，介绍了几种国内、国外精炼剂产品，提出发展高效复合精炼剂的想法。     

含Cl^-溶液中SO4^2-对316不锈钢临界点蚀温度的影响

采用外加恒电位下腐蚀电流-温度扫描方法研究了在0．5％Cl^-溶液中，SO4^2-浓度对316不锈钢点腐蚀行为的影响．结果表明，随着SO4^2-浓度的增加，钝化电流增加，开路电位降低．当SO4^2-浓度低于0．42％时，316不锈钢的临界点蚀温度比不存在SO4^2-时的临界点蚀温度低；当SO4^2-浓度大于0．42％时，临界点蚀温度比不存在SO4^2-时的临界点蚀温度高．从离子竞争吸附的角度进行分析，对SO4^2-加速与抑制点蚀两种作用规律的形成原因进行了解释．     

光学薄膜元器件外观特性机器视觉检测系统

本系统利用工业级摄像头及开发包的机器视觉功能与计算软件编程控制技术相结合,通过与输入控制系统中的标准膜片模板外观品质进行对比,实现高速高效、准确识别检测光学薄膜器件中滤光片的外观缺陷。可在生产线上根据外观品质标准模板中设定的类别进行自动分类装盒。     

Small Changes,Big Impact: Tungsten Bronzes with Extremely Large Second Harmonic Generation Achieved by the Transition Metal Doping on the B-Site

Two novel transition metal-doped tungsten bronze oxides, Pb_2.15Li_0.85Nb_4.85Ti_0.15O₁₅ (PLNT) and Pb_2.15Li_0.55Nb_4.85W_0.15O₁₅ (PLNW), are synthesized by high-temperature solid-state reactions. The Rietveld method using the high-resolution synchrotron radiation indicates that PLNT and PLNW crystallize in the orthorhombic polar noncentrosymmetric space group, Pmn2₁ (no. 31). As a class of tungsten bronze oxide, PLNT and PLNW retain a unique rigid framework composed of d⁰ transition metal cation (Ti⁴⁺ or W⁶⁺)-doped highly distorted NbO₆ octahedra along with the subsequently generated Pb/LiO₁₂ and PbO₁₅ polyhedra. Interestingly, the d⁰ transition metal-doped tungsten bronzes, PLNT and PLNW, exhibit extremely large second-harmonic generation (SHG) responses of 56 and 67 × KH₂PO₄, respectively. The observed immeasurably strong SHG is mainly attributed to a net polarization originating from the alignment of highly distorted NbO₆ octahedra with doped transition metals in the frameworks. It is believed that doping transition metal cations at the B-site of the tungsten bronze structures should be an innovative strategy to develop novel high-performance nonlinear optical materials.     

Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET

Impact of the discrete dopants on device performance is crucial in determining the behavior of nanoscale semiconductor devices. Atomistic quantum mechanical device simulation for studying the effect of discrete dopants on device's physical quantities is urgent. This work explores the physics of discrete-dopant-induced characteristic fluctuations in 16-nm fin-typed field effect transistor (FinFET) devices. Discrete dopants are statistically positioned in the three-dimensional channel region to examine associated carrier's characteristic, concurrently capturing “dopant concentration variation” and “dopant position fluctuation”. An experimentally validated quantum hydrodynamic device simulation was conducted to investigate the potential profile and threshold voltage fluctuations of the 16-nm FinFET. Results of this study provide further insight into the problem of fluctuation and the mechanism of immunity against fluctuation in 16-nm devices.     

A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions

A quantum correction model for nanoscale double-gate MOSFETs under inversion conditions is proposed. Based on the solution of Schrödinger-Poisson equations, the developed quantum correction model is optimized with respect to (i) the left and right positions of the charge concentration peak, (ii) the maximum of the charge concentration, (iii) the total inversion charge sheet density, and (iv) the average inversion charge depth, respectively. This model can predict inversion layer electron density for various oxide thicknesses, silicon film thicknesses, and applied voltages. Compared to the Schrödinger-Poisson results, our model prediction is within 3.0% of accuracy. This quantum correction model has continuous derivatives and is therefore amenable to a device simulator.