基于小角度高位技术的钻孔初采期瓦斯治理

回采工作面初采期瓦斯涌出不均衡,易出现瓦斯超限现象。针对新源煤矿近距离煤层群开采、瓦斯涌出量大等特点,提出了小角度高位钻孔抽采治理初采期瓦斯的方法;2219工作面应用实践表明,初采期内,小角度高位钻孔抽采瓦斯纯量最高5.25m3/min,瓦斯抽采率64.02%,回风流瓦斯浓度最高为0.32%,上隅角最高瓦斯浓度0.96%,未出现瓦斯超限现象,取得了很好的初采期瓦斯治理效果。     

Effects of different carbon sources and C/N values on nonvolatile taste components of Pleurotus eryngii

Pleurotus eryngii, the second largest industrial cultivation mushroom in China, is usually cultivated on substrates mainly consisting of sawdust and corncob. In this study, experiments were performed to determine the effects of different carbon sources and C/N values on nonvolatile taste components of P. eryngii. The effects of different carbon sources on nonvolatile taste components levels revealed that sawdust was beneficial to high levels of crude protein, amino acids, 5′‐nucleotides and equivalent umami concentration, while corncob was beneficial to high contents of carbohydrate, polysaccharides and trehalose. At the similar C/N values, relatively higher sawdust content was beneficial to umami amino acid production, while relatively higher corncob content was beneficial to high contents of carbohydrate, polysaccharides and mannitol. Higher C/N value was beneficial to high levels of crude protein, amino acids, 5′‐nucleotides and equivalent umami concentration, while lower C/N value was beneficial to high contents of carbohydrate, polysaccharides and trehalose. These results provided information for P. eryngii fruit body industrial cultivation to obtain specific nonvolatile taste components with high levels.     

锚栓用量对纯锚固岩棉保温系统抗风压性能的影响

采用ETAG 004:2013《外墙外保温薄抹灰系统欧洲技术认证指南》中规定的静态泡沫块法,测试在单位面积上使用不同数量锚栓的岩棉板外保温系统的抗风压性能。通过试验可以得出:在混凝土墙体上单纯采用敲击式锚栓锚固岩棉板外保温系统时,拉伸强度可达12.9 k Pa;单位面积增加锚栓的使用量可以提高系统的抗拉承载力,但在不同条件下增加相同数量锚栓对系统抗风载能力提高的程度不同;在普通混凝土墙中,单纯锚固岩棉板保温系统破坏时,单个锚栓承载力平均值的最大值约为其拉拔承载力的50.3%。     

Low-temperature synthesis of SiC nanowires with Ni catalyst

SiC nano wires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 ℃ by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron microscopy(SEM), transmission electron microscopy(TEM)and X-ray diffraction(XRD). The results show that the assynthesized nanowires are β-SiC single crystalline with diameter range of 50-100 nm, and length of tens of micron by directly annealing at 900 ℃. The SiC nano wires grow along the [111] direction with highly uniform morphology. And the possible growth mechanism of SiC nano wires is proposed.The present work provides an efficient strategy for the production of high-quality SiC nano wires.