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1.
Alok Singh Sitaram Dash Mohammed Kamruddin Puthupparampil K. Ajikumar Ashok K. Tyagi Vinjamoor S. Raghunathan Baldev Raj 《Journal of the American Ceramic Society》2002,85(4):927-932
Formation of nanocrystalline calcia from calcite has been studied in situ via transmission electron microscopy. The crystallographic transformation occurred via two mechanisms: the first is by distortion of the cleaved rhombohedron of calcite, formed by {104} planes in hexagonal coordinates, into a cube. This produced a microstructure of oriented, elongated nanocrystals of calcia with planar boundaries. In the second mechanism, the micrometer-sized parent calcite particles broke up into nano-sized grains as the decomposition began, leading to irregularly shaped, randomly oriented nanocrystals of calcia. 相似文献
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Rakeshkumar Vanzara Priyanka Sharma Haresh S. Bhatt Sudeep Tanwar Sudhanshu Tyagi Neeraj Kumar Mohammad S. Obaidat 《International Journal of Communication Systems》2019,32(2)
Due to the widespread popularity and usage of Internet of things (IoT)‐enabled devices, there is an exponential increase in the data traffic generated from these IoT devices. Most of these devices communicate with each other using heterogeneous links having constraints such as latency, throughput, and interference from concurrent transmissions. This results in an extra burden on the underlying communication infrastructure to manage the traffic within these constraints between source and destination. However, most of the existing applications use different Transmission Control Protocol (TCP) variants for traffic management between these devices and are dependent on the stage of the sender, irrespective of the application types and link characteristics. Each operating system (OS) has different TCP variant for all applications, irrespective of path characteristics. Hence, a single TCP variant cannot select the best suitable link, which results in degradation in throughput compared to the existing default. Moreover, it cannot use the full capacity of the available link for different applications and network links, especially in heterogeneous network such as IoT. To cope up with these challenges, in this paper, we propose an Adaptive and Dynamic TCP Interface Architecture (ADYTIA). ADYTIA allows the usage of different TCP variants based on application and link characteristics, irrespective of the physical links of the entire path. It allows the usage of different TCP variants based on their design principle across heterogeneous technologies, platforms, and applications. ADYTIA is implemented on NS‐2 and Linux kernel for real testbed experiments. Its ability to select the best suitable TCP variant results in 20% to 80% improvement in throughput compared with the existing default and single TCP variant on Linux and Windows. 相似文献
4.
C A Betty R Sasikala O D Jayakumar T Sakuntala A K Tyagi 《Progress in Photovoltaics: Research and Applications》2011,19(3):266-274
Porous silicon interfaces have been modified with nitrided TiO2 (TiON) nanoparticles to develop highly efficient photoelectrodes. Photoelectrodes were prepared by impregnating the electrochemically prepared porous silicon microchannels with titanium oxynitride. Photocatalytic measurements were carried out on titanium oxynitride particles in water‐methanol mixture and the results showed a dependence on the nitrogen concentration. Among the photoelectrodes used for photocurrent measurements, porous silicon impregnated with TiO2 nitrided at 600 °C showed maximum photocurrent increase after exposure to sunlight‐type radiation. The enhancement in photocurrent was one order more for the porous silicon/titanium oxynitride hetero‐structure than that of polished silicon/titanium oxynitride hetero‐structure. Photoelectrodes thus prepared were found to have stable performance for a period of six months. This observation promises the possibility of using porous silicon/titanium oxynitride hetero‐structures as efficient electrodes for photovoltaic cells. Copyright © 2010 John Wiley & Sons, Ltd. 相似文献
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An analytical two-dimensional capacitance-voltage model for AlGaN/GaN high electron mobility transistor (HEMTs) is developed, which is valid from a linear to saturation region. The gate source and gate drain capacitances are calculated for 120 nm gate length including the effects of fringing field capacitances. We obtain a cut-off frequency (fT) of 120 GHz and maximum frequency of oscillations (fmax) of 160 GHz. The model is very useful for microwave circuit design and analysis. Additionally, these devices allow a high operating voltage VDS, which is demonstrated in the present analysis. These results show an excellent agreement when compared with the experimental data. 相似文献
7.
R. Rajesh M. Hussain Z. H. Zaidi R. K. Tyagi Gaurav Singhal Mainuddin A. L. Dawar M. Endo 《Journal of Infrared, Millimeter and Terahertz Waves》2004,25(9):1361-1382
Chemical oxygen-iodine Laser (COIL) is one of the fast emerging high power laser source for near Infrared (λ=1.315μm) laser generation. The heart of the system is the singlet oxygen generator (SOG) which is a pumping source for this laser. A Jet type SOG with a novel approach was designed and fabricated. Singlet oxygen was taken out of the SOG at an angle of 40° thus avoiding the carry over of droplets, which is one of the major drawbacks of horizontal system. The preliminary results have been reported in our earlier publication. The present paper discusses the performance of this generator for various operational conditions viz. diluent's gas nitrogen / helium, basic hydrogen peroxide composition, generator pressure and gas velocity. Further, conditions for the stable operation from generator as well as chlorine injection point of view have been identified. 相似文献
8.
Kun Liang Ray A. Matsumoto Wei Zhao Naresh C. Osti Ivan Popov Bishnu P. Thapaliya Simon Fleischmann Sudhajit Misra Kaitlyn Prenger Madhusudan Tyagi Eugene Mamontov Veronica Augustyn Raymond R. Unocic Alexei P. Sokolov Sheng Dai Peter T. Cummings Michael Naguib 《Advanced functional materials》2021,31(33):2104007
MXenes exhibit excellent capacitance at high scan rates in sulfuric acid aqueous electrolytes, but the narrow potential window of aqueous electrolytes limits the energy density. Organic electrolytes and room-temperature ionic liquids (RTILs) can provide higher potential windows, leading to higher energy density. The large cation size of RTIL hinders its intercalation in-between the layers of MXene limiting the specific capacitance in comparison to aqueous electrolytes. In this work, different chain lengths alkylammonium (AA) cations are intercalated into Ti3C2Tx, producing variation of MXene interlayer spacings (d-spacing). AA-cation-intercalated Ti3C2Tx (AA-Ti3C2), exhibits higher specific capacitances, and cycling stabilities than pristine Ti3C2Tx in 1 m 1-ethly-3-methylimidazolium bis-(trifluoromethylsulfonyl)-imide (EMIMTFSI) in acetonitrile and neat EMIMTFSI RTIL electrolytes. Pre-intercalated MXene with an interlayer spacing of ≈2.2 nm, can deliver a large specific capacitance of 257 F g−1 (1428 mF cm−2 and 492 F cm−3) in neat EMIMTFSI electrolyte leading to high energy density. Quasi elastic neutron scattering and electrochemical impedance spectroscopy are used to study the dynamics of confined RTIL in pre-intercalated MXene. Molecular dynamics simulations suggest significant differences in the structures of RTIL ions and AA cations inside the Ti3C2Tx interlayer, providing insights into the differences in the observed electrochemical behavior. 相似文献
9.
A 90-nm logic technology featuring strained-silicon 总被引:10,自引:0,他引:10
Thompson S.E. Armstrong M. Auth C. Alavi M. Buehler M. Chau R. Cea S. Ghani T. Glass G. Hoffman T. Jan C.-H. Kenyon C. Klaus J. Kuhn K. Zhiyong Ma Mcintyre B. Mistry K. Murthy A. Obradovic B. Nagisetty R. Phi Nguyen Sivakumar S. Shaheed R. Shifren L. Tufts B. Tyagi S. Bohr M. El-Mansy Y. 《Electron Devices, IEEE Transactions on》2004,51(11):1790-1797
A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-performance dense logic is presented. Strained silicon is used to increase saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10% and 25%, respectively. Using selective epitaxial Si/sub 1-x/Ge/sub x/ in the source and drain regions, longitudinal uniaxial compressive stress is introduced into the p-type MOSEFT to increase hole mobility by >50%. A tensile silicon nitride-capping layer is used to introduce tensile strain into the n-type MOSFET and enhance electron mobility by 20%. Unlike all past strained-Si work, the hole mobility enhancement in this paper is present at large vertical electric fields in nanoscale transistors making this strain technique useful for advanced logic technologies. Furthermore, using piezoresistance coefficients it is shown that significantly less strain (/spl sim/5 /spl times/) is needed for a given PMOS mobility enhancement when applied via longitudinal uniaxial compression versus in-plane biaxial tension using the conventional Si/sub 1-x/Ge/sub x/ substrate approach. 相似文献
10.
Wireless Personal Communications - Wireless Sensor Networks (WSNs) are used to collect and transmitted the data in various applications from normal to those which requires significant security... 相似文献