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We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (fT) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (gm) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K  相似文献   
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Ultraviolet (UV) disinfection is becoming increasingly popular as an alternative disinfection technology to chlorination in recent years. In this study, we investigated the photoreactivation of Escherichia coli following medium-pressure (MP) UV disinfection of synthetic water by a bench-scale collimated beam apparatus. The UV doses ranged from 1.6 -19.7 mWs/cm2 and photoreactivation was investigated for 6 hours under fluorescent light. In addition, chloramination was applied after UV disinfection to investigate its ability to control photoreactivation. It was found that photoreactivation occurred for all UV doses tested and the increase in bacteria numbers ranged from 0.04 to 1.35 log10. However, the degree of photoreactivation decreased with increased UV doses. Chloramination experiments revealed that the addition of 0.5 mg/l of monochloramine resulted in suppression of photoreactivation for 1 hour only. An increased monochloramine dose of 1 mg/l was found to prevent photoreactivation for the entire duration of the experiment. The results of this study have shown that photoreactivation occurs even after MP UV disinfection, although it is of a lesser extent at higher UV doses. This study has also established that secondary chloramination can effectively suppress and eliminate photoreactivation with a chloramine dose of 1 mg/l.  相似文献   
5.
Self-consistent effects on the starting current of gyrotron oscillators are examined. Field profiles in the open cavity are shown to be sensitive to the interaction dynamics. This can either significantly raise or lower the oscillation threshold, particularly for the low-Q modes. The transition from resonant-mode oscillations at the low magnetic field to backward-wave oscillations at the high magnetic field is demonstrated.  相似文献   
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A study was carried out to understand the effect of precyclic loading on stress-corrosion-crack initiation in an X-65 pipeline steel exposed to a near-neutral-pH soil environment. The test specimens were precyclically loaded before corrosion exposure to represent a service history of up to about 20 years, depending on the severity of pressure fluctuation. Microcracks had initiated on the polished surface of the X-65 pipeline steel after long-time exposure at open-circuit potential (OCP) in a near-neutral-pH synthetic soil solution. These microcracks were mostly initiated from pits at metallurgical discontinuities such as grain boundaries, pearlitic colonies, and banded phases in the steel. Strong preferential dissolution was observed along planes of the banded structures in the steel. The selective corrosion attack at these metallurgical discontinuities is attributed to the galvanic nature of those areas to their neighbors. Cyclic loading prior to corrosion exposure had significant effects on microcrack initiation and propagation during subsequent corrosion exposure. Cyclic loading prior to corrosion exposure either reduced or increased the probability of crack initiation and the rate of crack propagation, depending upon the magnitude of the stress cycles. The largest reduction was seen at a peak cyclic stress of about 0.8 of the yield strength. This cyclic-loading-dependent cracking behavior might be related to the alteration of the substructures and the residual stress in the steel as a result of precyclic loading.  相似文献   
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A multilevel soliton communication system is proposed and assessed. In this system, at the transmitter end each channel transmits its data via fundamental solitons with a pre-specified amplitude (i.e., soliton width). At the receiver end we take advantage of the sensitive relationship between the amount or fundamental soliton self-wavelength shift and the width of the soliton in the subpicosecond region. We first compress the incoming soliton noises to the subpicosecond level and pass them through a short length of fiber at the end of which the pulses have become separated in the wavelength domain since each soliton, corresponding to a data channel, has experienced a different Raman self-wavelength shift. The channels are then easily separated by optical filters. We have derived the design constraint relations for such a system. We have then heuristically designed a 40 Gbs (four channels) system for a 1000 km propagation distance (total data-rate distance product of 40 Tb/km). Numerical simulations and noise analyses have verified the feasibility and practicality of the proposed system with very good design margins. The wavelength jitter is found to be much smaller than the desired filter spacing, and thus its contribution to the bit error rate is negligible. We also argue that the system is more tolerant to Gordon-Haus timing jitter than conventional TDM soliton systems. The system is all fiber and is, therefore very cost effective as it does not require sophisticated electro-optic and microwave circuits for demultiplexing. The system can potentially operate at much higher speeds than those achievable in conventional soliton systems and it can be used in parallel with WDM soliton system  相似文献   
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文中严格地讨论了任意截面形状,任意模式的柱形谐振腔Q值与构成该谐振器的传输线衰减常数间的关系,给出了更一般的公式,推广了Davidson和Sim-monds^[1]、Barlow和Cullen^[2]以及Yeh和Shimabukuro^[3,4]的结果。  相似文献   
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本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件,制备了优质非晶氮化硅薄膜,其介电常数为7.5、击穿强度为5.5MV/cm、电导率为10-13(Ωcm)-1。  相似文献   
10.
对传统双曲线极尖的四极透镜进行了磁性能分析。在此基础上,提出了极尖断面为折线的四极透镜结构。磁场的数值分析以及测量结果表明:该结构产生的场梯度均匀,且具有磁场集中、磁场梯度高、便于加工和安装的对称性控制等优点。该结构的四极透镜已用于CYCIAE-30回旋加速器和HI-13串列加速器束流输运线之中  相似文献   
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