Optically preamplified receiver performance due to VSB filtering for 40-Gb/s optical signals modulated with various formats

Optically preamplified receiver performance according to the vestigial sideband (VSB) filtering has been numerically investigated for 40-Gb/s optical signals modulated with nonreturn-to-zero, duobinary nonreturn-to-zero (NRZ), return-to-zero (RZ), carrier-suppressed RZ, and duobinary carrier-suppressed RZ formats. The VSB filtering enables the spectral widths of NRZ, duobinary NRZ, and RZ signals to be reduced without severe power penalties at the receiver. On the other hand, carrier-suppressed RZ and duobinary carrier-suppressed RZ signals have no large advantages over VSB filtering because of the characteristics of their signals. Our results suggest that RZ signals are the most suitable modulation format for VSB filtering, without considering the filter loss, because of the tolerance of the intersymbol interference and a large spectral width. However, duobinary NRZ signals are the most suitable modulation format for VSB filtering, considering the filter loss, because of their narrow spectral width.     

High-gain pseudomorphic InGaAs base ballistic hot-electron device

A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In _0.12Ga_0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In_0.12Ga_0.88As was estimated to be about 380 meV     

Factors affecting cloud point analysis of palm oleins

Some of the factors affecting cloud point determination of palm oleins are described. These are the type of container used, method of stirring, rate of stirring and bath temperature. The repeatability and reproducibility standard deviations of the method are determined from collaborative trials. Recommendations for the test are made to reduce the large variations among laboratories.     

Zero-valent iron treatment of RDX-containing and perchlorate-containing wastewaters from an ammunition-manufacturing plant at elevated temperatures.

The use of zero-valent iron for treating wastewaters containing RDX and perchlorate from an army ammunition plant (AAP) in the USA at elevated temperatures and moderately elevated temperature with chemical addition was evaluated through batch and column experiments. RDX in the wastewater was completely removed in an iron column after 6.4 minutes. Increasing the temperature to 75 degrees C decreased the required retention time to 2.1 minutes for complete RDX removal. Perchlorate in the wastewater was completely removed by iron at an elevated temperature of 150 degrees C in batch reactors in 6 hours without pH control. Significant reduction of perchlorate by zero-valent iron was also achieved at a more moderate temperature (75 degrees C) through use of a 0.2 M acetate buffer. Based on the evaluation results, we propose two innovative processes for treating RDX-containing and perchlorate-containing wastewaters: a temperature and pressure-controlled batch iron reactor and subsequent oxidation by existing industrial wastewater treatment plant; and reduction by consecutive iron columns with heating and acid addition capabilities and subsequent oxidation.     

Improved strained HEMT characteristics using double-heterojunctionIn0.65Ga0.35As/In0.52Al0.48As design

The DC and microwave properties of strained In_0.65Ga _0.35As/In₀₅₂Al_0.48As HEMTs (high electron-mobility transistors) with double-heterojunction design are presented. The high sheet carrier density and good carrier confinement give rise to excellent device performance with very low output conductance. For 1×150-μm² long-gate HEMTs, the measured cutoff frequency f_T and maximum frequency of oscillation f_max are as high as 37 and 66 GHz, respectively     

Monodisperse polymer/metal composite particles by electroless chemical deposition: Effect of surface functionality of polymer particles

Micron‐sized polymer particles were coated with layers of nickel compounds by plating electrolessly in the presence of aqueous solutions of nickel chloride, sodium hypophosphite, sodium citrate, and ammonium chloride at elevated temperature. The uniform functional polymer particle could be obtained by seeded polymerization. To investigate the effect of surface functionality on the conditions for nickel deposition, the polymer particle was functionalized with the thiol group. From morphological observation, it was found that the mode of nickel deposition was greatly dependent on the surface functionality of the polymer particle. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 87: 420–424, 2003     

Preparation of nano-sized silicon carbide powder using thermal plasma

Nano-sized silicon carbide (SiC) powder was prepared by thermal plasma process using silicon tetrachloride (SiCl₄) and methane (CH₄). The synthesized powder was characterized by X-ray diffraction pattern, scanning electron microscopy, transmission electron microscopy, FT-IR spectroscopy and particle size analyzer. The powder was dominated by β-SiC including some of α-SiC and free carbon species. The quality of the powder was varied with process conditions such as the molar ratio of H/Si and C/Si, and collecting positions. It was known that the conversion to SiC was mainly affected by the addition of hydrogen gas because it promoted the decomposition and reduction of SiCL. CH₄ was easily decomposed to carbon species for the formation of SiC as well as removal of impure oxygen, but excessive carbon suppressed the formation of crystalline SiC and resulted in the solid carbon contamination. The optimum ratio of H/Si was approx. 26 and that of C/Si was 1.1. For collecting positions, the powder collected at the vessel and filter was preferable to that at the reaction tube. The average size of the powder synthesized was estimated to be below 100 nm and uniform in distribution.     

Note: Interpolation for evaluation of a two-dimensional spatial profile of plasma densities at low gas pressures

An interpolation algorithm for the evaluation of the spatial profile of plasma densities in a cylindrical reactor was developed for low gas pressures. The algorithm is based on a collisionless two-dimensional fluid model. Contrary to the collisional case, i.e., diffusion fluid model, the fitting algorithm depends on the aspect ratio of the cylindrical reactor. The spatial density profile of the collisionless fitting algorithm is presented in two-dimensional images and compared with the results of the diffusion fluid model.     

Fabrication of silicon membrane using fusion bonding and two-step electrochemical etch-stopping

A new type of silicon membrane structure was fabricated using wafer fusion bonding and two-step electrochemical etch-stopping methods. An active wafer of p-type epi/n-type epi/p-type substrate was first elctrochemically etched to form a shallow cavity on the p-type epitaxial layer. Then, the cavity-formed side was fusionally bonded with p-type silicon working wafer and, afterwards, the p-type substrate of the active wafer part was removed by a second electrochemical etch-stopping leaving only the n-type membrane on the shallow cavity. Using the new membrane structure in mechanical sensors, more precise control of cavity depth and membrane thickness was achievable and the influence of crystalline imperfections on the sensing circuits located near the bonding seam was avoidable.     

Preparation of PbTiO3 thin films using an alkoxide-alkanolamine sol-gel system

The stable range of PbTiO₃ sol and the processing conditions of uniform thin films were investigated using a solution of titanium isopropoxide, three kinds of alkanolamines (monoethanolamine, diethanolamine, triethanolamine), lead acetate trihydrate and isopropanol. Depending on the sol state with various alkanolamine/alkoxide molar ratios, diethanolamine (DEA) was very effective in preparing uniform and dense oxide films through room-temperature reaction, owing to its superior stability during the hydrolysis and condensation reaction. Perovskite PbTiO₃ thin films were obtained on oxidized silicon wafer above 550 °C and completely pure films were obtained at 650 °C using DEA as a complexing agent. The dielectric constant and loss tangent of these thin films fired at 650 °C for 30 min were found to be 240 and 0.01 at 1 kHz, respectively.