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1.
In order to observe the transport ability of peritoneum to small molecular substances, peritoneal equilibration test (PET) was performed in 52 CAPD patients. By analysing the relationship between peritoneal transport function and dialysis adequacy, we found the average urea KT/V and Cr were significantly lower in high and low transport groups (n = 6 and n = 2) than in high average and low average groups (n = 35 and n = 9). According to the results of PET, we adjusted the dialysis program of 11 patients and the dialysis adequacy was markedly improved. We concluded that PET was helpful for selecting and adjusting CAPD program, and discussed some questions which should be payed more attention in PET operation. 相似文献
2.
A closed-loop power control (CLPC) scheme with a multistep (indicating multiple prediction steps) linear autoregressive predictor is presented. The proposed CLPC relies on low-rate sample vector based autoregressive prediction. Compared to currently available predictive CLCP schemes, it demonstrates particularly robust performance in the presence of large loop delays and channel estimation errors. 相似文献
3.
EA Ismail IS Shabani M Badawi H Sanaa S Madi A Al-Tawari H Nadi M Zaki Q Al-saleh 《Canadian Metallurgical Quarterly》1998,13(10):488-492
We studied Guillain-Barré syndrome, affecting children 12 years old or less, throughout Kuwait, in the period between January 1, 1992, and March 31, 1997. Nineteen children had the diagnostic criteria of Guillain-Barré syndrome, with an overall annual incidence rate of 0.95/100,000 population at risk. Female patients outnumbered male patients with a sex ratio of 1.4:1. There was a clustering of cases in winter and spring and in the year 1996. The disease symptoms were relatively severe in our patients because only 16% (3 of 19) of them were able to walk at the height of their illness, whereas the rest were bed or chair bound or needed assisted ventilation. Two patients had the electrodiagnostic features of axonal neuropathy and both had residual deficits on follow-up, whereas the rest recovered fully. All the patients received intravenous immunoglobulin. The mean time to walk unaided was 23.5 days (range, 2-84 days) after intravenous immunoglobulin and excluding the two patients with axonal neuropathy, and full recovery was achieved in a mean time of 103 days (range, 30-300 days). Contrary to previous studies, we found no correlation between oral polio vaccine administration and Guillain-Barré syndrome in 2 successive years (1995 and 1996) during a nationwide campaign targeting children less than 5 years old. 相似文献
4.
Arafa M. Fay P. Ismail K. Chu J.O. Meyerson B.S. Adesida I. 《Electron Device Letters, IEEE》1996,17(3):124-126
We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (fT) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (gm) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K 相似文献
5.
Simple linear voltage/current-controlled voltage-to-current (V-T) converters, which are to first-order insensitive to the threshold voltage variation, are introduced. The circuits can be used as basic building blocks to construct simple analog computational circuits, which can perform functions such as square rooting, squaring, multiplication, sum of squares, difference of squares, etc. Some of the key features are: good linearity, floating inputs [high common-mode rejection ratio (CMRR)], simplicity, and good transconductance tuning range. The circuits can be realized with CMOS devices in saturation, however, BiCMOS devices extend their speed and input voltage range. Realistic simulations and experimental results clearly demonstrate the claims 相似文献
6.
A generalized parameter-level statistical model, called statistical MOS (SMOS), capable of generating statistically significant model decks from intra- and inter-die parameter statistics is described. Calculated model decks preserve the inherent correlations between model parameters while accounting for the dependence of parameter variance on device separation distance and device area. Using a Monte Carlo approach to parameter sampling, circuit output means and standard deviations can be simulated. Incorporated in a CAD environment, these modeling algorithms will provide the analog circuit designer with a method to determine the effect of both circuit layout and device sizing on circuit output variance. Test chips have been fabricated from two different fabrication processes to extract statistical information required by the model. Experimental and simulation results for two analog subcircuits are compared to verify the statistical modeling algorithms 相似文献
7.
Design of a CMOS 18th-order IF (intermediate frequency) bandpass filter for integrated low-IF Bluetooth receivers is presented. The centre frequency and bandwidth of the filter are 3 and 1 MHz, respectively. The proposed filter is based on unity gain fully differential voltage buffers and provides efficient, low power and a small area design solution. The filter, including its automatic tuning circuit, occupies an area of 0.6 mm2 in a standard 0.5 mum-CMOS chip. Experimental results show that the filter satisfies the selectivity and dynamic range requirements of Bluetooth while operating from a total supply current of 0.9 mA 相似文献
8.
9.
Ismail K. Meyerson B.S. Rishton S. Chu J. Nelson S. Nocera J. 《Electron Device Letters, IEEE》1992,13(5):229-231
The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm2/V-s and 2.5×1012 (1.5×1012 ) cm-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors 相似文献
10.
CMOS scaling into the nanometer regime 总被引:11,自引:0,他引:11
Yuan Taur Buchanan D.A. Wei Chen Frank D.J. Ismail K.E. Shih-Hsien Lo Sai-Halasz G.A. Viswanathan R.G. Wann H.-J.C. Wind S.J. Hon-Sum Wong 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1997,85(4):486-504
Starting with a brief review on 0.1-μm (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays. The last part of the paper discusses several alternative or unconventional device structures, including silicon-on-insulator (SOI), SiGe MOSFET's, low-temperature CMOS, and double-gate MOSFET's, which may lead to the outermost limits of silicon scaling 相似文献