Linear friction welding of Ti6Al4V: experiments and modelling

Linear friction welding of the Ti6Al4V alloy is studied. A new definition of the energy input rate is proposed, based on an integration over time of the in-plane force and velocity; a strong correlation with the upset rate is then found. The effective friction coefficient is estimated to be 0·5±0·1 for varying frequencies and amplitudes, with only a weak dependence on the processing conditions displayed. A model is proposed that accounts for both the conditioning and equilibrium stages of the process, which is shown to be in good agreement with the experimental data. The model is used to study the mechanism by which the flash is formed. A criterion is proposed by which the rippled nature of its morphology can be predicted.     

Desalination by distillation and by reverse osmosis — trends towards the future

As the requirement for fresh water increases worldwide, there is a need for more and more plants that are able to treat non-conventional water sources. Sea water has become an important source of fresh water in many arid regions. This feature provides an overview of recent process improvements in sea water desalination using reverse osmosis, multi-stage flash, multi-effect distillation and electrodialysis. Areas discussed include the use of alternative energy sources (wind energy, solar energy and nuclear energy) for reverse osmosis or distillation processes, and the impact of the different desalination process on the environment. Also covered are the implementation of hybrid processes in sea water desalination, and the pretreatment of desalination plants by pressure-driven membrane processes.     

The measurement of the diffusion coefficient and the sorption isotherm of water in paint films

An experimental technique together with a numerical model is proposed with which the diffusion coefficient and the sorption isotherm of water in paint can be measured. Inside a closed vessel, paint films are on stainless-steel plates. Water is present as water vapour in the air and in the paint. After blowing dry or wet air through the vessel for some time, the situation moves to a new equilibrium. The relative humidity of the air inside the vessel is measured as a function of time. From fitting the theoretical/numerical model against the experimental values, follow the diffusion coefficient and the sorption isotherm of water in the paint. The results show large scattering. When the independently measured sorption isotherm is used as an input parameter in the model, the fitting procedure gives much smaller scattering for the diffusion coefficient.     

Light-induced electron spin polarization in the ground state of water-soluble copper porphyrins

Light-induced spin-polarized transient EPR spectra are reported for several water-soluble copper porphyrins. The spectra are assigned to the doublet ground state, with emissive spin polarization resulting from photoexcitation and subsequent electronic relaxation. In contrast to other systems for which polarization of a doublet ground state has been observed, the exchange interactions in the copper porphyrins are strong and the geometry is fixed. It is proposed that intersystem crossing from the photoexcited trip-doublet to the trip-quartet state can lead to net polarization of the spin system and that this polarization is maintained during electronic decay, possibly via charge-transfer and exciplex states. The intensity of the observed spin polarization is essentially independent of the molecular orientation in the external field, but is strongly dependent on the nature of the charged peripheral groups. Possible reasons for this behavior are discussed.     

Novel level-identifying circuit for flash multilevel memories

This paper presents a high-speed, small-area circuit specifically designed to identify the levels in the read out operation of a flash multilevel memory. The circuit is based on the analog computation of the Euclidean distance between the current read out from a memory cell and the reference currents that represent the different logic levels. An experimental version of the circuit has been integrated in a standard double-metal 0.7-μm CMOS process with a die area of only 140×100 μm². Operating under a 5-V power supply, this circuit identifies the read-out current of a memory cell, and associates it with the appropriate logic level in 9 ns