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N. J. R. Muniraj 《Microsystem Technologies》2011,17(1):27-29
The RF applications like voltage controlled oscillators, tunable filters, resonators etc., requires tunable capacitors in their designs. This paper presents the design of wide range MEMS tunable capacitors for RF applications. This design consists of an air suspended bottom plate and a fixed top plate. The top fixed plate and the suspended bottom plate form the tunable capacitor. The capacitance range of this tunable capacitor is from 69.172 to 138.344 nF. This range is wider compared with the conventional MEMS tunable capacitors of tuning ranges in pico Farads. The fabrication process is similar to that of the existing standard integrated circuit fabrication processes, which makes this design suitable for integrated RF applications. 相似文献
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Components like passive electronically scanned (sub) arrays, T/R modules, reconfigurable antennas etc., in RF applications
are in need of MEMS switches for its re-configurability and polarization. This paper presents the analysis, design and simulation
of a MEMS switch. The switch proposed in this paper is intended to work in the frequency range of 4–8 GHz. The proposed switch
fulfills the switching characteristics concerning the five requirements loss, linearity, high switching speed, small size/power
consumption, low pull down voltage following a relatively simple design, which ensures reliability, robustness and high fabrication
yield. The switch implemented in this paper is based on the integration mode of operation and widely used in RF applications. 相似文献
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N. J. R. Muniraj 《Microsystem Technologies》2011,17(1):31-33
The RF applications like voltage controlled oscillators, tunable filters, resonators etc., requires tunable capacitors in their designs. This paper presents the design of wide range MEMS tunable capacitors for RF applications. This design consists of an air suspended bottom plate and a fixed top plate. The top fixed plate and the suspended bottom plate form the tunable capacitor. The capacitance range of this tunable capacitor is from 69.172 to 138.344?nF. This range is wider compared with the conventional MEMS tunable capacitors of tuning ranges in pico Farads. The fabrication process is similar to that of the existing standard integrated circuit fabrication processes, which makes this design suitable for integrated RF applications. 相似文献
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Gopannagari Madhusudana Muniraj Vedi Kuyil Azhagan Kwon Ki Young Kim Yujin Reddy D. Amaranatha Kim Tae Kyu Yoo Hyun Deog 《Journal of Applied Electrochemistry》2022,52(10):1449-1458
Journal of Applied Electrochemistry - Improving the reversible capacity, fast chargeability, and cyclability of cathode materials are the primary challenges in the development of advanced... 相似文献
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Experimental investigation of PV based modified SEPIC converter fed hybrid electric vehicle (PV-HEV)
Selvarani Natchimuthu Muniraj Chinnusamy Arul Prasanna Mark 《International Journal of Circuit Theory and Applications》2020,48(6):980-996
This paper presents a high gain modified three-port dual boost single-ended primary-inductor converter (SEPIC) converter operated hybrid photovoltaic (PV)/battery electric vehicle to improve the power transfer capability and efficiency of the power conversion stage. The proposed three-port dual boost high gain SEPIC converter accepts wide voltage range of input then the conventional single stage SEPIC converter. The three-winding high frequency coupling transformer integrates the two input sources and step-up the input voltage. The theoretical and experimental analyses are presented to validate the performance of the proposed modified SEPIC converter in boosting the wide range of input voltage. A 6 kW, 12 to 600 V of experimental model has been developed and tested. The efficiency obtained from the designed model is around 94.11%. 相似文献
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