Zero-valent iron treatment of RDX-containing and perchlorate-containing wastewaters from an ammunition-manufacturing plant at elevated temperatures.

The use of zero-valent iron for treating wastewaters containing RDX and perchlorate from an army ammunition plant (AAP) in the USA at elevated temperatures and moderately elevated temperature with chemical addition was evaluated through batch and column experiments. RDX in the wastewater was completely removed in an iron column after 6.4 minutes. Increasing the temperature to 75 degrees C decreased the required retention time to 2.1 minutes for complete RDX removal. Perchlorate in the wastewater was completely removed by iron at an elevated temperature of 150 degrees C in batch reactors in 6 hours without pH control. Significant reduction of perchlorate by zero-valent iron was also achieved at a more moderate temperature (75 degrees C) through use of a 0.2 M acetate buffer. Based on the evaluation results, we propose two innovative processes for treating RDX-containing and perchlorate-containing wastewaters: a temperature and pressure-controlled batch iron reactor and subsequent oxidation by existing industrial wastewater treatment plant; and reduction by consecutive iron columns with heating and acid addition capabilities and subsequent oxidation.     

一种基于RGV、AGV的柔性输送系统

随着现代制造业的迅速发展,我国的物流行业也随之崛起,并且逐渐受到全社会的广泛关注。早期的人工物流、机械化物流方式,已经远远不能满足现在大规模生产流水线的需求。本文提出了一种基于RGV、AGV的柔性输送系统,其中环形RGV输送系统通过成对的码头和码头之间的流水线与AGV输送系统、非环形往复式RGV输送系统相接驳;AGV输送系统和非环形往复式RGV输送系统用于将物流货品从环形RGV输送系统送入或送出指定物流系统。该系统有效地克服传统单一RGV输送系统对使用场所的适应性差、轨道占用空间大等缺点,同时避免使用单一AGV输送系统带来的输送效率较低、设备及维护成本较高等问题。     

Structural Explanation of the Dielectric Enhancement of Barium Titanate Nanoparticles Grown under Hydrothermal Conditions

When synthesized under certain conditions, barium titanate (BaTiO₃, BTO) nanoparticles are found to have the non-thermodynamic cubic structure at room temperature. These particles also have a several-fold enhanced dielectric constant, sometimes exceeding 6000, and are widely used in thin-layer capacitors. A hydrothermal approach is used to synthesize BTO nanocrystals, which are characterized by a range of methods, including X-ray Rietveld refinement and the Williamson–Hall approach, revealing the presence of significant inhomogeneous strain associated with the cubic phase. However, X-ray pair distribution function measurements clearly show the local structure is lower symmetry than cubic. This apparent inconsistency is resolved by examining 3D Bragg coherent diffraction images of selected nanocrystals, which show the existence of ≈50 nm-sized domains, which are interpreted as tetragonal twins, and yet cause the average crystalline structure to appear cubic. The ability of these twin boundaries to migrate under the influence of electric fields explains the dielectric anomaly for the nanocrystalline phase.     

Highly Crystalline Soluble Acene Crystal Arrays for Organic Transistors: Mechanism of Crystal Growth During Dip‐Coating

The preparation of uniform large‐area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field‐effect transistors. Quantitative control over the drying speed during dip‐coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the air–solution–substrate contact line are still not well understood. Here, we report the facile one‐step growth of self‐aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field‐effect mobilities (up to 1.5 cm V^?1 s^?1) via an optimized dip‐coating process. We discover that optimized acene crystals grew at a particular substrate lifting‐rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 °C) or chloroform (b.p. of 60.4 °C). Variable‐temperature dip‐coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom‐up study of soluble acene crystal growth during dip‐coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder‐shaped substrates).     

基于盲源分离和时频分析的漏磁信号处理

利用独立分量分析的冗余取消特性,对多维加噪声观测信号进行盲源分离,得到源观测信号,实现噪声的有效消除,文章中应用此方法处理了仿真漏磁缺陷信号,实验结果表明:该除噪方法能极大提高漏磁信号的信噪比,且其效果要优于小波变换除噪方法.漏磁缺陷信号在时域上波形非常相似,很难加以分辨,而它们的危害性却大不相同,文章对裂纹和凹坑缺陷信号进行小波包分解,根据信号特征自适应的产生一组最优基来表征信号,分析这两种缺陷的时频特性,准确识别出这两种缺陷.     

Thermal buffer materials for enhancement of device performance of organic light emitting diodes fabricated by laser imaging process

Laser Induced Thermal Imaging (LITI) is a laser addressed thermal patterning technology with unique advantages such as an excellent uniformity of transfer film thickness, a capability of multilayer stack transfer and a possibility to fabricate high resolution as well as large-area display. Nevertheless, it has been an obstacle to use such a laser imaging process as a commercial technology so far because of serious deterioration of the device performances plausibly due to a re-orientation of the molecular stacking especially in the emitting layer during thermal transfer process. To improve device performances, we devised a new concept to suppress the thermal degradation during such kind of thermal imaging process by using a high molecular weight small molecular species with large steric hindrance as well as high thermostability as a thermal buffer layer to realize highly efficient LITI devices. As a result, we obtained very high relative efficiency (by EQE) up to 91.5% at 1000 cd/m² from the LITI devices when we utilize 10-(naphthalene-2-yl)-3-(phenanthren-9-yl)spiro[benzo[ij]tetraphene-7,9′-fluorene] as a thermal buffer material.     

Self‐Healing Reduced Graphene Oxide Films by Supersonic Kinetic Spraying

The industrial scale application of graphene and other functional materials in the field of electronics has been limited by inherent defects, and the lack of simple deposition methods. A simple spray deposition method is developed that uses a supersonic air jet for a commercially available reduced graphene oxide (r‐GO) suspension. The r‐GO flakes are used as received, which are pre‐annealed and pre‐hydrazine‐treated, and do not undergo any post‐treatment. A part of the considerable kinetic energy of the r‐GO flakes entrained by the supersonic jet is used in stretching the flakes upon impact with the substrate. The resulting “frozen elastic strains” heal the defects (topological defects, namely Stone‐Wales defect and C₂ vacancies) in the r‐GO flakes, which is reflected in the reduced ratio of the intensities of the D and G bands in the deposited film. The defects can also be regenerated by annealing.     

High-Efficiency Power Amplifier Using Novel Dynamic Bias Switching

A novel bias-switching scheme for a high-efficiency power amplifier is proposed. Two voltage levels for the drain bias of the RF power amplifier are generated using a combination of a class E dc/ac inverter and a class E rectifier with offset voltage. When signal peaks occur, the output of the class E dc/ac inverter is rectified and the rectified dc is added to the offset voltage by the class E rectifier, which boosts the drain bias of the RF power amplifier. Except during peaks, the drain bias of the RF power amplifier is connected to the offset voltage directly. Since the efficiency when there are no peaks is very high due to the direct connection between the offset voltage and drain bias, the overall efficiency of the RF power amplifier can be improved dramatically in high peak-to-average power ratio (PAPR) systems. The measured results show that the drain bias of the RF power amplifier is boosted up to approximately 1.8 times the offset voltage when the RF peaks generate. The overall efficiency of the proposed bias-switching amplifier is improved by 62% compared to that of the fixed bias amplifier in high PAPR systems