Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Properties of nanoporous organosilicate hybrid thin films with a bimodal pore size distribution

Low dielectric poly[methylsilsesquioxane‐ran‐trifluoropropylsilsesquioxane‐ran‐(2,4,6,8‐tetramethyl‐2,4,6,8‐tetraethylenecyclotetrasiloxane)silsesquioxane]s {P[M‐ran‐TFP‐ran‐(TCS)]SSQs} having various compositions were synthesized using trifluoropropyl trimethoxysilane, methyl trimethoxysilane and 2,4,6,8‐tetramethyl‐2,4,6,8‐tetra(trimethoxysilylethyl)cyclotetrasiloxane. The chemical composition of the polymers and the content of SiOH end‐groups were controlled by adjusting the reaction conditions, and they were characterized by ¹H‐NMR. The thermally decomposable trifluoropropyl groups on the P[M‐ran‐TFP‐ran‐(TCS)]SSQ backbone and heptakis(2,3,6‐tri‐O‐methyl)‐β‐cyclodextrin (CD) were employed as pore generators. The dielectric constants of the porous CD/P[M‐ran‐TFP‐ran‐(TCS)]SSQ films were in the range 2.0–2.7 (at 100 kHz) depending on the concentration of the porogens, and showed no change over 4 days under aqueous conditions. The pore size of the films showed a bimodal distribution, with diameters of ca 0.5–1.0 nm for those originating from the trifluoropropyl groups and 1.7 nm from the CD. The elastic modulus and hardness of the 30 vol% CD‐blended film with a dielectric constant of 2.26 were 2.40 and 0.38 GPa, respectively, as determined by a nanoindenter. Copyright © 2005 Society of Chemical Industry     

Effect of exponentially graded base doping on the performance ofGaAs/AlGaAs heterojunction bipolar transistors

The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×10¹⁹ cm^-3 at the emitter edge to 5×10¹⁸ cm^-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×10¹⁹ cm^-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%     

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping andInGaAs emitter contacts

The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×10⁸ h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology     

Surface tailoring of an ethylene propylene diene elastomeric terpolymer via plasma‐polymerized coating of tetramethyldisiloxane

In the research presented here, we explore the use of a low‐energy plasma to deposit thin silicone polymer films using tetramethyldisiloxane (TMDSO) (H(CH₃)₂? Si? O? Si? (CH₃)₂H) on the surface of an ethylene propylene diene elastomeric terpolymer (EPDM) in order to enhance the surface hydrophobicity, lower the surface energy and improve the degradation/wear characteristics. The processing conditions were varied over a wide range of treatment times and discharge powers to control the physical characteristics, thickness, morphology and chemical structure of the plasma polymer films. Scanning electron microscopy (SEM) shows that pore‐free homogeneous plasma polymer thin films of granular microstructure composed of small grains are formed and that the morphology of the granular structure depends on the plasma processing conditions, such as plasma power and time of deposition. The thicknesses of the coatings were determined using SEM, which confirmed that the thicknesses of the deposited plasma‐polymer films could be precisely controlled by the plasma parameters. The kinetics of plasma‐polymer film deposition were also evaluated. Contact angle measurements of different solvent droplets on the coatings were used to calculate the surface energies of the coatings. These coatings appeared to be hydrophobic and had low surface energies. X‐ray photoelectron spectroscopy (XPS) and photoacoustic Fourier‐transform infrared (PA‐FT‐IR) spectroscopy were used to investigate the detailed chemical structures of the deposited films. The optimum plasma processing conditions to achieve the desired thin plasma polymer coatings are discussed in the light of the chemistry that takes place at the interfaces. Copyright © 2004 Society of Chemical Industry     

Metal Single-Site Molecular Complex–MXene Heteroelectrocatalysts Interspersed Graphene Nanonetwork for Efficient Dual-Task of Water Splitting and Metal–Air Batteries

Development of multifunctional electrocatalysts with high efficiency and stability is of great interest in recent energy conversion technologies. Herein, a novel heteroelectrocatalyst of molecular iron complex (Fe_MC)-carbide MXene (Mo₂TiC₂T_x) uniformly embedded in a 3D graphene-based hierarchical network (GrH) is rationally designed. The coexistence of Fe_MC and MXene with their unique interactions triggers optimum electronic properties, rich multiple active sites, and favorite free adsorption energy for excellent trifunctional catalytic activities. Meanwhile, the highly porous GrH effectively promotes a multichannel architecture for charge transfer and gas/ion diffusion to improve stability. Therefore, the Fe_MC–MXene/GrH results in superb performances towards oxygen reduction reaction (ORR), oxygen evolution reaction (OER), and hydrogen evolution reaction (HER) in alkaline medium. The practical tests indicate that Zn/Al–air batteries derived from Fe_MC–MXene/GrH cathodic electrodes produce high power densities of 165.6 and 172.7 mW cm⁻², respectively. Impressively, the liquid-state Zn–air battery delivers excellent cycling stability of over 1100 h. In addition, the alkaline water electrolyzer induces a low cell voltage of 1.55 V at 10 mA cm⁻² and 1.86 V at 0.4 A cm⁻² in 30 wt.% KOH at 80 °C, surpassing recent reports. The achievements suggest an exciting multifunctional electrocatalyst for electrochemical energy applications.     

Improving traversability of quadruped walking robots using body movement in 3D rough terrains

This paper presents a study on improving the traversability of a quadruped walking robot in 3D rough terrains. The key idea is to exploit body movement of the robot. The position and orientation of the robot are systematically adjusted and the possibility of finding a valid foothold for the next swing is maximized, which makes the robot have more chances to overcome the rough terrains. In addition, a foothold search algorithm that provides the valid foothold while maintaining a high traversability of the robot, is investigated and a gait selection algorithm is developed to help the robot avoid deadlock situations. To explain the algorithms, new concepts such as reachable area, stable area, potential search direction, and complementary kinematic margin are introduced, and the effectiveness of the algorithms is validated via simulations and experiments.     

BSPNN: boosted subspace probabilistic neural network for email security

In the modern age of Internet connectivity, advanced information systems have accumulated huge volumes of data. Such fast growing, tremendous amount of data, collected and stored in large databases has far exceeded our human ability to comprehend without proper tools. There has been a great deal of research conducted to explore the potential applications of Machine Learning technologies in Security Informatics. This article studies the Network Security Detection problems in which predictive models are constructed to detect network security breaches such as spamming. Due to overwhelming volume of data, complexity and dynamics of computer networks and evolving cyber threats, current security systems suffer limited performance with low detection accuracy and high number of false alarms. To address such performance issues, a novel Machine Learning algorithm, namely Boosted Subspace Probabilistic Neural Network (BSPNN), has been proposed which combines a Radial Basis Function Neural Network with an innovative diversity-based ensemble learning framework. Extensive empirical analyses suggested that BSPNN achieved high detection accuracy with relatively small computational complexity compared with other conventional detection methods.