Far-infrared magnetospectroscopy on epitaxial zero-gap and wide-gap semiconductor layer systems

Far-infrared magnetotransmission measurements have been performed on MBE-grown HgTe and CdTe epilayers. The results on the HgTe samples can be understood by the standard Pidgeon-Brown model for bulk HgTe. For the CdTe layers, transitions were only observed under illumination by visible light. The spectra are dominated by the 1s→2p transition of the shallow hydrogen-like impurity. These transitions are persistent with a life time of the order of magnitude of one second.     

Blue-green ZnSe lasers with a new type of active region

We report the results of an experimental study of molecular-beam epitaxy of ZnSe-based laser heterostructures with a new structure of the active region, which contains a fractional-monolayer CdSe recombination region in an expanded ZnSe quantum well and a waveguide based on a variably-strained, short-period superlattice are reported. Growth of a fractional-monolayer CdSe region with a nominal thickness of 2–3 ML, i.e., less than the critical thickness, on a ZnSe surface (Δa/a∼7%) leads to the formation of self-organized, pseudomorphic, CdSe-enriched islands with lateral dimensions ∼10–30 nm and density ∼2×10¹⁰ cm⁻², which serve as efficient centers of carrier localization, giving rise to effective spatial separation of defective regions and regions of radiative recombination and, as a result, a higher quantum efficiency. Laser structures for optical pumping in the (Zn, Mg) (S, Se) system with a record-low threshold power density (less than 4 kW/cm² at 300 K) and continuous-wave laser diodes in the system (Be, Mg, Zn) Se with a 2.5 to 2.8-ML-thick, fractional-monolayer CdSe active region have been obtained. The laser structures and diodes have an improved degradation resistance. Fiz. Tekh. Poluprovodn. 33, 1115–1119 (September 1999)     

Thermoelectric Coolers with Sintered Silver Interconnects

The fabrication and performance of a sintered Peltier cooler (SPC) based on bismuth telluride with sintered silver interconnects are described. Miniature SPC modules with a footprint of 20 mm² were assembled using pick-and-place pressure-assisted silver sintering at low pressure (5.5 N/mm²) and moderate temperature (250°C to 270°C). A modified flip-chip bonder combined with screen/stencil printing for paste transfer was used for the pick-and-place process, enabling high positioning accuracy, easy handling of the tiny bismuth telluride pellets, and immediate visual process control. A specific contact resistance of (1.4 ± 0.1) × 10^?5 Ω cm² was found, which is in the range of values reported for high-temperature solder interconnects of bismuth telluride pellets. The realized SPCs were evaluated from room temperature to 300°C, considerably outperforming the operating temperature range of standard commercial Peltier coolers. Temperature cycling capability was investigated from 100°C to 235°C over more than 200 h, i.e., 850 cycles, during which no degradation of module resistance or cooling performance occurred.     

GIS中的快速暂态过电压及影响因素分析

在本文建议的简化等值回路进行验证的基础上,计算了某一国产GIS中隔离开关操作引起的快速暂态过电压,并对一些影响因素进行了分析讨论。     

Fabrication and Characterization of Nanopillars for Silicon-Based Thermoelectrics

Si-based nanopillars of various sizes were fabricated by lateral structuring using anisotropic etching and thermal oxidation. We obtained pillars of diameter <500 nm, about 25 μm in height, with an aspect ratio of more than 50. The distance between pillars was varied from 500 nm to 10 μm. Besides the fabrication and structural characterization of silicon nanopillars, implementation of adequate metrology for measuring single pillars is described. Commercial tungsten probes, self-made gold probes, and piezoresistive silicon cantilever probes were used for measurements of nanopillars in a scanning electron microscope (SEM) equipped with nanomanipulators.     

Cleaning of structured templates from nanoparticle accumulation using silicone

Polydimethylsiloxan (PDMS) turned out to be a simple and cost efficient material for the removal of nanoparticles from patterned surfaces. After molding the particle-laden surface using liquid silicone, surface cleaning is realized by curing the PDMS comprising the encapsulated particles and subsequent removal. The method is proven for silicon, SiO₂ and gold surfaces occupied by carbon and Polytetrafluorethylen (PTFE or Teflon) particles. Samples up to 2?inch wafers were successfully cleaned. The effect of PDMS on the surface energy is verified by contact angle measurements showing a clear change in wetting for H₂O. This effect is abolished by oxygen plasma and HF-Dip.     

Contacts on high aspect ratio 3D structures

We present a novel way for depositing material on the top surface of three-dimensional (3D) structures. This process supplies the possibility of applying a wide range of materials on the top of structures which are too high to be processed with conventional techniques. A planarization process or vertical sidewalls of the structures are not necessary.     

500亿电子伏特加速器用LEBT高导磁测流器的研制

本文介绍用我国材料和技术研制成LEBT高导磁测流器的问题。特别是在防止高导磁材料磁性下降方面进行了各种尝试,从中取得一定的经验,使得测流器的性能优于国外同类产品。