Study of the use of vitamin K in neonates in France

Our objective was to assess flow velocity waveforms of the portal venous system of the anemic fetus prior to and immediately following intravascular transfusion. Color-guided pulsed Doppler was used to obtain flow velocity waveforms from the fetal portal vein in 14 anemic fetuses that were transfused in utero for rhesus alloimmunization The portal vein velocity pattern was defined as continuous when no change in velocity during the cardiac cycle was noted. It was defined as pulsatile when a deflection of the wave was present. The flow velocity waveforms were quantified by using the ratio between the peak (highest, H) and the nadir (lowest, L) velocities (H/L ratio). Fourteen intravascular transfusions were performed. Gestational age ranged from 19.5 to 35 weeks (mean +/- SD, 26.7 +/- 5.3 weeks). The hematocrit ranged from 5.9 to 31.2% (mean +/- SD, 20.3 +/- 9%) prior to transfusion; after transfusion it was between 24.8 and 56.7% (mean +/- SD, 42 +/- 10.4%). In six cases (43%) the waveforms were pulsatile prior to transfusion; in the other eight (57%) they were continuous. The pulsatile pattern was present following transfusion in 13 cases (93%, p < 0.05). The mean of the H/L ratio was 1.3 +/- 0.38 prior to transfusion and 2.0 +/- 0.86 after transfusion (p < 0.05). Because the portal vein has continuous non-pulsatile flow in the normal fetus, the presence of pulsatility in the waves of six anemic fetuses (43%) may suggest portal hypertension. Compared to normal fetuses, there was an increased number of cases with pulsation, and even more so after transfusion. The pattern corresponds to findings in children with portal hypertension.     

Study of etch rate characteristics of SF6/He plasmas byresponse-surface methodology: effects of interelectrode spacing

The characteristics of SF₆/He plasmas which are used to etch Si₃N₄ have been examined with experimental design and modeled empirically by response-surface methodology using a Lam Research Autoetch 480 single-wafer system. The effects of variations of process gas flow rate (20-380 sccm), reactor pressure (300-900 mtorr). RF power (50-450 W at 13.56 MHz), and interelectrode spacing (8-25 mm) on the etch rates of LPCVD (low-pressure chemical vapor deposition) Si₃N₄, thermal SiO₂, and photoresist were examined at 22±2°C. Whereas the etch rate of photoresist increases with interelectrode spacing between 8 and 19 mm and then declines between 19 and 25 mm, the etch rate of Si₃N ₄ increases smoothly from 8 to 25 mm, while the etch rate of thermal SiO₂ shows no dependence on spacing between 8 and 25 mm. The etch rates of all three films decrease with increasing reactor pressure. Contour plots of the response surfaces for etch rate and etch uniformity of Si₃N₄ as a function of spacing and flow rate at constant RF power (250 W) display complex behavior at fixed reactor pressures. A satisfactory balance of etch rate and etch uniformity for Si₃N₄ is predicted at low reactor pressure (~300 mtorr), large electrode spacing (12-25 mm), and moderate process gas flow rates (20-250 sccm)     

Infinitesimal Perturbation Analysis in Networks of Stochastic Flow Models: General Framework and Case Study of Tandem Networks with Flow Control

This paper presents a general algorithmic framework for computing the IPA derivatives of sample performance functions defined on networks of fluid queues. The underlying network-model consists of bi-layered hybrid dynamical systems with continuous-time dynamics at the lower layer and discrete-event dynamics at the upper layer. The linearized system, computed from the sample path via a discrete-event process, yields fairly simple algorithms for the IPA derivatives. As an application-example, the paper discusses loss and workload performance functions in a tandem network with congestion control, subjected to signal delays.     

Backscattered electron imaging of the undersurface of resin-embedded cells by field-emission scanning electron microscopy

In this study backscattered electron (BSE) imaging was used to display cellular structures stained with heavy metals within an unstained resin by atomic number contrast in successively deeper layers. Balb/c 3T3 fibroblasts were cultured on either 13-mm discs of plastic Thermanox, commercially pure titanium or steel. The cells were fixed, stained and embedded in resin and the disc removed. The resin block containing the cells was sputter coated and examined in a field-emission scanning electron microscope. The technique allowed for the direct visualization of the cell undersurface and immediately overlying areas of cytoplasm through the surrounding embedding resin, with good resolution and contrast to a significant depth of about 2 μm, without the requirement for cutting sections. The fixation protocol was optimized in order to increase heavy metal staining for maximal backscattered electron production. The operation of the microscope was optimized to maximize the number of backscattered electrons produced and to minimize the spot size. BSE images were collected over a wide range of accelerating voltages (keV), from low values to high values to give ‘sections' of information from increasing depths within the sample. At 3–4 keV only structures a very short distance into the material were observed, essentially the areas of cell attachment to the removed substrate. At higher accelerating voltages information on cell morphology, including in particular stress fibres and cell nuclei, where heavy metals were intensely bound became more evident. The technique allowed stepwise ‘sectional’ information to be acquired. The technique should be useful for studies on cell morphology, cycle and adhesion with greater resolution than can be obtained with any light-microscope-based system.