Concentration-dependent changes in the latency and amplitude of somatosensory-evoked potentials by desflurane, isoflurane and sevoflurane

Despite improvement in early diagnosis, surgical techniques, and general patient care, most deaths of cancer patients result from metastases. Recent studies have revealed that cytokines produced by cancer cells or by stromal cells play an important role into development the cancer metastasis. The formation of a cancer metastasis involves several major steps: 1) extensive vascularization; 2) local invasion; 3) adherence either to capillary endothelial cells or to subendothelial basement membrane; 4) extravasation; and 5) proliferation. In colon cancer, several cytokines such as growth factors, inflammatory cytokines, and angiogenic factors have been confirmed to be involved in each step of metastasis. This paper summarizes the involvement of cytokines in the development of invasion and metastasis in colon cancer.     

Perthes' disease treated by prolonged recumbency and femoral head containment: a long-term appraisal

The results of a long-term review of 102 hips in eighty-seven patients with Perthes' disease are described, the mean follow-up interval being seventeen years. All had been treated by an extremely rigorous conservative regime in which the patients were kept in hospital for an average period of twenty-six months, during which time they were confined to bed with the legs in wide abduction, first in traction and later in "broomstick" plasters to ensure "containment" of the femoral head. The patients were assessed by the joint clincial and radiological method described by Ratliff (1956). The results were very satisfactory, with only 2 per cent poor results and 10 per cent fair. The remaining 88 per cent were good. The radiological results at the end of treatment have also been compared with control series described by Catterall (1972) and with the osteotomy series of Lloyd-Roberts, Catterall and Salamon (1976). From this it appears that the described regime offers no benefit compared with the natural history in Catterall's Groups I and II, and in Group III the results were only marginally better than those following osteotomy. In Group IV cases, however, where the femoral head was totally involved, the benefit was important, and since these are the cases which carry the worst natural prognosis it is suggested that the use of the method described in such instances must be seriously considered in spite of its social disadvantages. The theoretical implications of the findings are considered, and it is concluded that the benefits of the method cannot be ascribed wholly to the application of the "containment" principle.     

High-throughput detection and sizing of individual low-index nanoparticles and viruses for pathogen identification

Rapid, chip-scale, and cost-effective single particle detection of biological agents is of great importance to human health and national security. We report real-time, high-throughput detection and sizing of individual, low-index polystyrene nanoparticles and H1N1 virus. Our widefield, common path interferometer detects nanoparticles and viruses over a very large sensing area, orders of magnitude larger than competing techniques. We demonstrate nanoparticle detection and sizing down to 70 nm in diameter. We clearly size discriminate nanoparticles with diameters of 70, 100, 150, and 200 nm. We also demonstrate detection and size characterization of hundreds of individual H1N1 viruses in a single experiment.     

Demonstration of an ion-implanted, wavelength-shifted quantum-well laser

A technique for fabricating many different wavelength lasers on the same wafer has been developed. High energy ion implantation was used to selectively blue shift the emission wavelength of an InP-based quantum well laser structure. This structure was then processed into fully functional broad-area lasers whose current threshold was unaffected by the implantation process, indicating extremely high material quality after bandgap-shifting. This process has the potential for the integration of not only different wavelength lasers, but also other devices, such as waveguides, detectors, modulators, etc., on a single wafer.     

A multimedia interactive conferencing application for personalworkstations

The multimedia interactive conferencing application (MICA), a personal-workstation application for multipoint visual teleconferencing, is described. MICA allows people at two or more locations to share visual material such as documents, photographs, and computer screens in a highly interactive way. It supports the distribution, storage, retrieval, and high-quality display of visuals, real-time interaction by pointing and annotation, and meeting services facilities. The context of multimedia teleconferencing and computer-supported cooperative work is established, relating earlier research to the design of MICA. The services MICA offers are outlined. The handling, compression, and display of multiple media, and the design of a suitable user interface for MICA are discussed     

Thermal-field forward current in GaN-based surface-barrier structures

The voltage and temperature dependences of the capacitance and forward current in surface-barrier Ni-n-GaN structures are experimentally studied. The results are compared with the Padovani-Stratton thermofield emission theory. It is established that, in a temperature range of 250–410 K, the forward current of the Ni-n-GaN surface-barrier structures (the electron density in GaN is ～10¹⁷ cm^?3) is caused by a thermofield emission of electrons, whose energy is ～0.1 eV below the potential-barrier top.     

Flow of the current along metallic shunts in ohmic contacts to wide-gap III–V semiconductors

It is established experimentally that the contact metal—wide-gap semiconductor (GaAs, GaP, GaN) with the Schottky barrier transforms into the ohmic contact either in the process of continuous heating or in the process of holding at an elevated temperature before the formation of any recrystallized layers. In this case, resistance of the contact reduced to the unit area increases as the temperature increases for semiconductors with a high dislocation density (GaP, GaN). It is assumed that in such contacts, the current flows along the metallic shunts, which shorten the layer of space charge and are formed by metal atoms diffused along the dislocation lines or other imperfections of the semiconductor. In semiconductors with a low dislocation density (GaAs), resistance of the ohmic contact per unit area decreases with increasing the temperature as it was expected for the thermionic mechanism of current flowing.