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排序方式: 共有816条查询结果,搜索用时 15 毫秒
1.
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 总被引:1,自引:0,他引:1
Verzellesi G. Mazzanti A. Basile A.F. Boni A. Zanoni E. Canali C. 《Electron Devices, IEEE Transactions on》2003,50(8):1733-1740
Gate-lag effects are characterized in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) by means of measurements and numerical device simulations. Gate lag increasingly affects device switching at increasing ungated recess extension, suggesting that responsible deep levels be located at the ungated, recess surface of the HFET. Gate lag diminishes by making the off-state gate-source voltage less negative and by increasing the drain bias. Increasing the temperature makes the turn-on transient faster at low drain bias, while slightly delaying it at high drain bias. Numerical device simulations accounting for acceptor-like traps at the ungated surface predict gate-lag phenomena in good agreement with experiments, reproducing correctly the observed bias and temperature dependences. Simulations show that surface states behave, during the turn-on transient, as hole traps capturing holes attracted at the ungated surface by the negative trapped charge. 相似文献
2.
Neviani A. Meneghesso G. Zanoni E. Hafizi M. Canali C. 《Electron Device Letters, IEEE》1997,18(12):619-621
Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient αn in In0.53Ga0.47As at medium-low electric fields are reported for the first time. The increase of αn with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In0.53Ga 0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In0.53Ga 0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current 相似文献
3.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献
4.
Chromium metabolism of lactating women was evaluated by measuring diet, breast milk, urine, and serum chromium in 17 subjects 60 d postpartum. Breast milk chromium concentration was similar for the 3 d of collection with a mean +/- SE concentration of 3.54 +/- 0.40 nmol/L (0.18 ng/mL). Dietary intake and urinary chromium values were also similar for each of the 3 collection days. Total chromium intake of lactating mothers (0.79 +/- 0.08 mumol/d) was greater than that of reference female subjects (0.48 +/- 0.02). There was a significant correlation (r = 0.84) between serum chromium and urinary chromium excretion. If a breast milk volume of 715 mL is assumed, chromium intake of exclusively breast-fed infants is < 2% of the estimated safe and adequate daily intake of 10 micrograms. In summary, breast milk chromium content is independent of dietary chromium intake and serum or urinary chromium values. Chromium intake also did not correlate with serum or urine chromium but there was a significant relationship between serum and urinary chromium concentrations. 相似文献
5.
6.
Vendrame L. Zabotto E. Dal Fabbro A. Zanini A. Verzellesi G. Zanoni E. Chantre A. Pavan P. 《Electron Devices, IEEE Transactions on》1995,42(9):1636-1646
In this paper we describe a set of measurements representing a complete characterization of impact-ionization effects in bipolar transistors. We demonstrate that impact-ionization significantly influences the dependence of base resistance on current and voltages applied to the device. A dc method for the simultaneous extraction of all parasitic resistances in bipolar transistors is presented. The method can separate the influence of current-crowding on the base resistance from that of base width and conductivity modulation; the collector parasitic resistance is measured in the active region. Starting from the parameters extracted by means of these techniques, a complete and accurate circuit-model of impact-ionization effects can be defined 相似文献
7.
MB Spellerberg CJ Chapman CI Mockridge DA Isenberg FK Stevenson 《Canadian Metallurgical Quarterly》1995,6(2):52-56
The VH4-21 (V4-34) gene segment, a member of the VH4 family, is expressed early in B-cell maturation and is utilized by approximately 6% of normal adult B lymphocytes. This prevalence indicates an importance of VH4-21 in the B-cell repertoire. The gene also encodes certain autoantibodies being mandatory for pathological IgM anti-red cell antibodies directed against the I/i antigen, and also capable of encoding anti-DNA antibodies. Recognition of I/i antigen or DNA appears to be via two distinct sites on VH, with I/i binding mediated by sequences in the framework region, and DNA binding correlating with the presence of positively charged amino acids in complementarity-determining region 3. However, these positively charged residues appear to suppress the ability of the framework region to interact with I/i, rendering a single sequence monospecific for I/i or DNA. The IgM anti-DNA antibodies also recognize bacterial lipid A, whereas the anti-I/i antibodies do not, indicating that CDR3 may be involved in binding the negatively charged lipid A. Structural similarities between the DNA backbone and lipid A provide a possible explanation for this cross-reactivity. This dual recognition of bacterial antigen and autoantigen provides a potential link between infection and autoimmunity. 相似文献
8.
9.
T Smith AK Hewson CI Kingsley JP Leonard ML Cuzner 《Canadian Metallurgical Quarterly》1997,150(6):1909-1917
Acute, monophasic experimental allergic encephalomyelitis (EAE) in the Lewis rat shows pathological similarities to the human disease multiple sclerosis (MS). Rats that recover from EAE are essentially resistant to disease reinduction, unlike MS in which relapses are frequently associated with common bacterial and viral infections. As macrophage-derived interleukin (IL)-12 is a critical component of innate resistance to bacterial infection and appears to directly activate encephalitogenic T cells in vivo, the ability of this cytokine to reinduce paralysis in EAE was examined. Paralytic disease was exacerbated by intraperitoneal IL-12 administration and could be reinduced up to 1 week after recovery from the primary clinical episode. Concomitant with worsening of initial clinical signs and relapse was an increase in the ratio of macrophages to T cells in brain stem perivascular cuffs and the expression of inducible nitric oxide synthase in cells with both macrophage and microglial morphology. These findings suggest that IL-12 may contribute to macrophage-mediated disease exacerbation and relapse in patients with MS. 相似文献
10.
Variation in repeated nucleotide sequences (RNSs) at the level of entire families assayed by Southern blot hybridization is remarkably low within species and is a powerful tool for scrutinizing the origin of allopolyploid taxa. Thirty-one clones from RNSs isolated from different Triticeae genera were used to investigate the genome constitution of South American Elymus. One of these clones, pHch2, preferentially hybridized with the diploid H genome Hordeum species. Hybridization of this clone with a worldwide collection of Elymus species with known genome formulas showed that pHch2 clearly discriminates Elymus species with the H genome (StH, StHH, StStH, and StHY) from those with other genome combinations (StY, StStY, StPY, and StP). Hybridization with pHch2 indicates the presence of the H genome in all South American Elymus species except Elymus erianthus and Elymus mendocinus. Hybridization with additional clones that revealed differential restriction fragments (marker bands) for the H genome confirmed the absence of the H genome in these species. Differential restriction fragments for the Ns genome of Psathyrostachys were detected in E. erianthus and E. mendocinus and three species of Leymus. Based on genome constitution, morphology, and habitat, E. erianthus and E. mendocinus were transferred to the genus Leymus. 相似文献