Autoimmunity caused by disruption of central T cell tolerance. A murine model of drug-induced lupus

A side effect of therapy with procainamide and numerous other medications is a lupus-like syndrome characterized by autoantibodies directed against denatured DNA and the (H2A-H2B)-DNA subunit of chromatin. We tested the possibility that an effect of lupus-inducing drugs on central T cell tolerance underlies these phenomena. Two intrathymic injections of procainamide-hydroxylamine (PAHA), a reactive metabolite of procainamide, resulted in prompt production of IgM antidenatured DNA antibodies in C57BL/6xDBA/2 F1 mice. Subsequently, IgG antichromatin antibodies began to appear in the serum 3 wk after the second injection and were sustained for several months. Specificity, inhibition and blocking studies demonstrated that the PAHA-induced antibodies showed remarkable specificity to the (H2A-H2B)-DNA complex. No evidence for polyclonal B cell activation could be detected based on enumeration of Ig-secreting B cells and serum Ig levels, suggesting that a clonally restricted autoimmune response was induced by intrathymic PAHA. The IgG isotype of the antichromatin antibodies indicated involvement of T cell help, and proliferative responses of splenocytes to oligonucleosomes increased up to 100-fold. As little as 5 microM PAHA led to a 10-fold T cell proliferative response to chromatin in short term organ culture of neonatal thymi. We suggest that PAHA interferes with self-tolerance mechanisms accompanying T cell maturation in the thymus, resulting in the emergence of chromatin-reactive T cells followed by humoral autoimmunity.     

GUIDELINES FOR DESIGNING EIS INTERFACES Meeting Executives' Information Needs

For users of an executive information system (EIS), the EIS interface is the system and is crucial to the EIS's success. These guidelines for designing EIS interfaces are based on studies of actual EIS interfaces that meet the unique information needs of executives.     

Luminescence from praseodymium doped AlN thin films deposited by RF magnetron sputtering and the effect of material structure and thermal annealing on the luminescence

Thin films of Praseodymium doped AlN are deposited on silicon (111) substrates at 77 K and 950 K by rf magnetron sputtering method. About 500–1000 nm thick films are grown at 100–200 watts RF power and 5–8 mTorr nitrogen, using a metal target of Al with Pr. X-rays diffraction results show that films deposited at 77 K are amorphous and those deposited at 950 K are crystalline. Cathodoluminescence studies are performed at room temperature and luminescence peaks are observed in a wide range from ultraviolet to infrared region. The most intense peak is obtained in green at 526 nm from amorphous films as a result from ³P₁→³H₅ transition. In crystalline films the intense peak was obtain in red at 648 nm as a result from ³P₀→³F₂ transition. Films are thermally activated at 1300 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence. Two peaks at 488 nm and 505 nm merged after thermal activation, giving rise to a single peak at 495 nm.     

Arsenic intoxication presenting with macrocytosis and peripheral neuropathy, without anemia

A case of arsenic intoxication associated with macrocytosis and neuropathy, without anemia, is presented. Evaluation of a 68-year-old man with a long history of peripheral neuropathy and persistent macrocytosis revealed exposure to an insecticide. Analysis of urine and hair revealed elevated levels of arsenic. A short course of d-penicillamine failed to promote urinary excretion of arsenic. Removal of the insecticide resulted in resolution of macrocytosis and slight improvement of neuropathy. This case emphasizes that arsenic intoxication should be considered in patients with macrocytosis with peripheral neuropathy, even in the absence of anemia.     

Threshold voltage-minimum gate length trade-off in buried channelPMOS devices for scaled supply voltage CMOS technologies

The trade-off between threshold voltage (V_th) and the minimum gate length (L_min) is discussed for optimizing the performance of buried channel PMOS transistors for low voltage/low power high-speed digital CMOS circuits. In a low supply voltage CMOS technology it is desirable to scale V_th and L_min for improved circuit performance. However, these two parameters cannot be scaled independently due to the channel punch-through effect. Statistical process/device modeling, split lot experiments, circuit simulations, and measurements are performed to optimize the PMOS transistor current drive and CMOS circuit speed. We show that trading PMOS transistor V_th for a smaller L_min results in faster circuits for low supply voltage (3.3 to 1.8 V) n⁺-polysilicon gate CMOS technology, Circuit simulation and measurements are performed in this study. Approximate empirical expressions are given for the optimum buried channel PMOS transistor V _th for minimizing CMOS circuit speed for cases involving: (1) constant capacitive load and (2) load capacitance proportional to MOS gate capacitance. The results of the numerical exercise are applied to the centering of device parameters of a 0.5 μm 3.3 V CMOS technology that (a) matches the speed of our 0.5 μm 5 V CMOS technology, and (b) achieves good performance down to 1.8 V power supply. For this process the optimum PMOS transistor V_th (absolute value) is approximately 0.85-0.90 V     

Results of the ASTM field test of tristimulus weighting functions

In 1993, the American Society for Testing and Materials carried out a field test of newly calculated tristimulus weighting factors. These weighting factors had been calculated by a method proposed by Venable. the test also included a method of correction for bandpass dependence put forth by Stearns. the purpose of the trial was to assess the possible reduction in bandpass dependence introduced by each of these sets of weights. A large number of sets of spectral data were gathered from the cooperators in the field test. Results of integration by the various sets of tristimulus weighting factors were calculated. A total of 15 120 color differences were calculated and statistics were derived to test the probable error resulting from each method of correction. Errors attributable to bandpass dependence were on the order of a few tenths to as much as one CIELAB unit when uncorrected weight sets were used. These errors could be reduced to a few hundreths of a CIELAB unit, and in some cases to a few thousandths of a unit, by employing one correcting strategy or the other. an overall mix of strategies was ultimately chosen to minimize the bandpass dependence over the entire range of weight sets. Utilizing this mixed strategy, the median error introduced into 10-nm integration by bandpass dependence was only 0.004 CIELAB units. © 1995 John Wiley & Sons, Inc.     

Ruins and Revival: Paris in the Aftermath of the Second World War

Although many devastated European cities have been studied, the bombing and reconstruction of key industrial sites and certain suburban residential zones in greater Paris have received little scholarly attention. Using archival sources, this article explores both destruction and reconstruction, and traces how homeless families shared apartments or endured years of 'temporary' accommodation in huts and other shelters. Post-war economic planning in France privileged the restoration of industrial and commercial sites; rebuilding of housing by the state, by housing co-operatives and by individual property owners received less support and progressed far more slowly. Today, the visual legacy of reconstruction is easily confused with that of completely new post-war apartments; however its origin, if not its architecture, is distinctively different and merits recognition in its own right.     

Formant labelling using pole-focused spectra

An algorithm is introduced which labels formants from the peaks of pole-focused spectra. A clustering procedure is first used to produce line segments of possible formants. These can be considered as anchor traces for the later processing. Rule-based labelling is then applied to provide final formant trace estimates. Experimental results show that the proposed algorithm offers improved formant labelling accuracy.