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1.
2.
MA Nowak AL Lloyd GM Vasquez TA Wiltrout LM Wahl N Bischofberger J Williams A Kinter AS Fauci VM Hirsch JD Lifson 《Canadian Metallurgical Quarterly》1997,71(10):7518-7525
Mathematical modeling of viral replication dynamics, based on sequential measurements of levels of virion-associated RNA in plasma during antiretroviral treatment, has led to fundamental new insights into human immunodeficiency virus type 1 pathogenesis. We took advantage of the simian immunodeficiency virus (SIV)-infected macaque model to perform detailed measurements and mathematical modeling during primary infection and during treatment of established infection with the antiretroviral drug (R)-9-(2-phosphonylmethoxypropyl)adenine (PMPA). The calculated clearance half-life for productively infected cells during resolution of the peak viremia of primary infection was on the order of 1 day, with slightly shorter clearance half-lives calculated during PMPA treatment. Viral reproduction rates upon discontinuation of PMPA treatment after 2 weeks were approximately twofold greater than those obtained just prior to initiation of treatment in the same animals, likely reflecting accumulation of susceptible target cells during treatment. The basic reproductive ratio (R0) for the spread of SIV infection in vivo, which represents the number of productively infected cells derived from each productively infected cell at the beginning of infection, was also estimated. This parameter quantifies the extent to which antiviral therapy or vaccination must limit the initial spread of virus to prevent establishment of chronic disseminated infection. The results thus provide an important guide for efforts to develop vaccines against SIV and, by extension, human immunodeficiency virus. 相似文献
3.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献
4.
Although not well known, the University of Toronto had a very early computer-development program and in 1952 was one of the first few institutions with an operable computer in North America. This article describes the university's initial attempt to build the UTEC computer and how it acquired the pioneering Ferut machine 相似文献
5.
J. C. Williams R. G. Baggerly N. E. Paton 《Metallurgical and Materials Transactions A》2002,33(3):837-850
Single crystals of Ti-Al alloys containing 1.4, 2.9, 5, and 6.6 pct Al (by weight) were oriented for 〈a〉 slip on either basal or prism planes or loaded parallel along the c-axis to enforce a nonbasal deformation mode. Most of the tests were conducted in compression and at temperatures between
77 and 1000 K. Trace analysis of prepolished surfaces enabled identification of the twin or slip systems primarily responsible
for deformation. Increasing the deformation temperature, Al content, or both, acted to inhibit secondary twin and slip systems,
thereby increasing the tendency toward strain accommodation by a single slip system having the highest resolved stress. In
the crystals oriented for basal slip, transitions from twinning to multiple slip and, finally, to basal slip occurred with
increasing temperature in the lower-Al-content alloys, whereas for Ti-6.6 pct Al, only basal slip was observed at all temperatures
tested. A comparison of the critically resolved shear stress (CRSS) values for basal and prism slip as a function of Al content
shows that prism slip is favored at room temperature in pure Ti, but the stress to activate these two systems becomes essentially
equal in the Ti-6.6 pct Al crystals over a wide range of temperatures.
Compression tests on crystals oriented so that the load was applied parallel to the c-axis showed extensive twinning in lower Al concentrations and 〈c+a〉 slip at higher Al concentrations, with a mixture of 〈c+a〉 slip and twinning at intermediate compositions. A few tests also were conducted in tension, with the load applied parallel
to the c-axis. In these cases, twinning was observed, and the resolved shear for plastic deformation by twinning was much lower that
that for 〈c+a〉 slip observed in compression loading.
This article is based on a presentation made in the symposium entitled “Defect Properties and Mechanical Behavior of HCP Metals
and Alloys” at the TMS Annual Meeting, February 11–15, 2001, in New Orleans, Louisiana, under the auspices of the following
ASM committees: Materials Science and Critical Technology Sector, Structural Materials Division, Electronic, Magnetic & Photonic
Materials Division, Chemistry & Physics of Materials Committee, Joint Nuclear Materials Committee, and Titanium Committee. 相似文献
6.
7.
S.J. Curran R.E. Hayes A. Afacan M.C. Williams P.A. Tanguy 《Journal of food science》2002,67(1):176-180
ABSTRACT: The effect of pH on the non-Newtonian viscosity (η)of aqueous Carbopol 940 solutions is presented with high resolution (pH increments about 0.4) between pH = 2.8 and 12.7. Aqueous NaOH was used to adjust pH of 1.48 wt % Carbopol solutions. A Contraves viscometer was used to measure steady-flow shear stress at known shear rate (γ) over the range γ= 8 to 195 s−1 . Yield stresses and shear-thinning η(γ) were observed. Data were fitted with a Herschel-Bulkley model, whose parameters (including yield stress) were expressed as functions of pH. Comparisons were made of η(γ) to the dynamic viscometric properties η'(ω) and η*(ω) for comparable ranges of γ and frequency (ω): A fairly close match was found between η and η* but η«η'. pH dependence included previously unreported extrema of h(pH) in the range of pH = 6.2 to 6.6. Because of sensitive control of rheological properties with pH, Carbopol solutions can be used to mimic a great range of shear-thinning and yield-stress behavior that should make them useful for model studies directed toward process and equipment design and evaluation. 相似文献
8.
9.
This paper derives the governing equations for the thermomechanical behaviour of composites. When the basic equations for the thermoelastic behaviour of solids were first derived in the nineteenth century several approximations were made. The effect of these assumptions are discussed and illustrated by the results of a simple laboratory test. The implications of this work on the analysis of impact damaged laminates are then discussed. 相似文献
10.
B. A. Young J. R. Williams S. W. Deiker S. T. Ruggiero B. Cabrera 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》2004,520(1-3):307-310
We summarize a continuing investigation into using ion implantation to alter the transition temperature of superconducting thin films. The primary motivation for the work presented here was to study the feasibility of using magnetic ion doping to replace the bi-layer Tc control process currently used for certain cryogenic detector applications at National Institute for Standards and Technology. The results from work with various ion species implanted into aluminum, molybdenum, titanium and tungsten host films are presented. 相似文献