首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   54篇
  免费   0篇
化学工业   5篇
金属工艺   4篇
能源动力   2篇
无线电   6篇
一般工业技术   7篇
冶金工业   14篇
自动化技术   16篇
  2023年   3篇
  2020年   1篇
  2019年   3篇
  2018年   3篇
  2017年   1篇
  2015年   2篇
  2014年   1篇
  2013年   3篇
  2012年   1篇
  2011年   4篇
  2010年   3篇
  2009年   1篇
  2008年   1篇
  2006年   1篇
  2005年   2篇
  2004年   3篇
  2001年   2篇
  1999年   1篇
  1998年   1篇
  1997年   2篇
  1996年   1篇
  1994年   1篇
  1991年   2篇
  1990年   1篇
  1989年   2篇
  1988年   3篇
  1987年   2篇
  1979年   2篇
  1977年   1篇
排序方式: 共有54条查询结果,搜索用时 15 毫秒
1.
Dipen Moitra 《Algorithmica》1991,6(1-6):624-657
Given a black-and-white image, represented by an array of √n × √n binary-valued pixels, we wish to cover the black pixels with aminimal set of (possibly overlapping) maximal squares. It was recently shown that obtaining aminimum square cover for a polygonal binary image with holes is NP-hard. We derive an optimal parallel algorithm for theminimal square cover problem, which for any desired computation timeT in [logn,n] runs on an EREW-PRAM with (n/T) processors. The cornerstone of our algorithm is a novel data structure, the cover graph, which compactly represents the covering relationships between the maximal squares of the image. The size of the cover graph is linear in the number of pixels. This algorithm has applications to problems in VLSI mask generation, incremental update of raster displays, and image compression.  相似文献   
2.
Atomistic simulations focusing on sintering of crystalline tungsten powders at the submicroscopic level are performed to shed light on the processing on the nanoscale powders. The neck growth and shrinkage were calculated during these sintering simulations, making it possible to extend these results to the evolution of global physical properties that occurs during sintering. The densification and grain growth during sintering were calculated with variations in temperature, pressure, particle configuration and crystalline misalignment between particles. These findings lay the foundation for a virtual approach to setting the processing cycles and materials design applicable to nanoscale powders.  相似文献   
3.
4.
Various tridiagonal solvers have been proposed in recent years for different parallel platforms. In this paper, the performance of three tridiagonal solvers, namely, the parallel partition LU algorithm, the parallel diagonal dominant algorithm, and the reduced diagonal dominant algorithm, is studied. These algorithms are designed for distributed-memory machines and are tested on an Intel Paragon and an IBM SP2 machine. Measured results are reported in terms of execution time and speedup. Analytical studies are conducted for different communication topologies and for different tridiagonal systems. The measured results match the analytical results closely. In addition to addressing implementation issues, performance considerations such as problem sizes and models of speedup are also discussed. © 1997 John Wiley & Sons, Ltd.  相似文献   
5.
Dipen Moitra 《Algorithmica》1991,6(1):624-657
Given a black-and-white image, represented by an array of n × n binary-valued pixels, we wish to cover the black pixels with aminimal set of (possibly overlapping) maximal squares. It was recently shown that obtaining aminimum square cover for a polygonal binary image with holes is NP-hard. We derive an optimal parallel algorithm for theminimal square cover problem, which for any desired computation timeT in [logn,n] runs on an EREW-PRAM with (n/T) processors. The cornerstone of our algorithm is a novel data structure, the cover graph, which compactly represents the covering relationships between the maximal squares of the image. The size of the cover graph is linear in the number of pixels. This algorithm has applications to problems in VLSI mask generation, incremental update of raster displays, and image compression.The research reported here forms part of the author's doctoral dissertion, submitted to Cornell University in May 1989. This work was partially supported by NSF Grant DC1-86-02256, IBM Agreement 12060043, and ONR Contract N00014-83-K-0640. A preliminary version of this paper was presented at the 26th Annual Allerton Conference on Communications, Control, and Computing, Monticello, IL, September 28–30, 1988.  相似文献   
6.
7.
8.
Austenitic stainless steel, low hydrogen ferritic steel and high nickel steel consumables are used for the welding of armor-grade quenched and tempered (Q&T) steels. The use of such consumables in the welding of armorgrade Q&T steel leads to the formation of distinct microstructures in the respective welds and has a major influence on the dynamic fracture toughness. Hence, this paper examines how shielded metal arc welding consumables affect the dynamic fracture toughness (J1d) of armor-grade Q&T steel joints. The J1d values of joints fabricated with high nickel steel joints are superior than all other joints.  相似文献   
9.
A first principles density functional theory study to investigate the H defect in NiTi alloy is presented. We have determined the interstitial H atom position in bulk B2 phase NiTi alloy. H positions on both the Ti and Ni terminated NiTi surfaces are calculated. Surface adsorptions of H atom on Ni/Ti terminated surfaces are calculated for a low surface coverage of 1.96 × 1014 cm?2. We have also calculated the penetration barrier energy for an H atom from the surface site to the bulk lattice site.  相似文献   
10.
In BCC crystals, such as Tungsten (W), slippage has been observed on the (1 1 0) and (1 1 2) planes. In this work, hydrogen diffusion paths from three different W surfaces ((1 0 0), (1 1 0) and (1 1 2)) have been calculated using first principles density functional theory. Equilibrium sites for H at the surfaces are identified. The energetics for H penetration from the surfaces to the solute site in the bulk is calculated. It is found that for our low surface coverage of H (3.4 × 1014 H/cm2), approximately 2 eV is required for an H atom to penetrate any of the W surfaces considered in this study.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号