Optimum design for buckling of plain and stiffened composite axisymmetric shell panels/shells

The buckling of plain and discretely stiffened composite axisymmetric shell panels/shells made of repeated sublaminate construction is studied using the finite element method. In repeated sublaminate construction, a full laminate is obtained by repeating a basic sublaminate, which has a smaller number of plies. The optimum design for buckling is obtained by determining the layup sequence of the plies in the sublaminate by ranking, so as to achieve maximum buckling load for a specified thickness. For this purpose, a four-noded 48-dof quadrilateral composite thin shell element, together with fully compatible two-noded 16-dof composite meridional and parallel circle stiffener elements are used.     

Static and dynamic strain-dependent viscoelastic behavior of black-filled EPDM vulcanizates

The strain dependence of the dynamic mechanical properties of HAF-N330-filled EPDM vulcanizate was studied using a Rheovibron DDV III EP. It is shown that when a dynamic strain is superposed on a static strain, the viscoelastic response of filled rubbers becomes more complex. Under these conditions, dynamic mechanical properties do not correlate with the double strain amplitude. A strain called the “total strain” has been defined in order to interpret the experimental results. It is also shown that the dynamic mechanical properties are displacement velocity dependent, while the comparison is made under identical conditions of strain and frequency. Separability of time and strain effects is observed for the storage modulus, whereas the loss modulus is shown to be a nonseparable function. The elastic and the relaxation components, constituting the mixed function representing the storage modulus are shown to have similar deformation dependence. © 1994 John Wiley & Sons, Inc.     

Development into blastocysts of bovine oocytes cryopreserved by ultra-rapid cooling

The objective of the research described was to devise an efficient procedure to cryopreserve in vitro-matured bovine oocytes, using in vitro fertilization (IVF) and development of resultant zygotes into blastocysts as criteria of oocyte survival. Oocytes at metaphase II were found to be extremely sensitive to chilling. Cooling them to O degrees C for as little as 5 sec significantly decreased their capability to cleave and develop further after IVF; after 80 sec at 0 degrees C, only approximately 10% of chilled oocytes developed into blastocysts. Oocytes were also adversely affected by brief exposures to 4 M and 5.5 M ethylene glycol (EG) solutions supplemented with sucrose; after being suspended in either of these EG solutions in plastic straws and plunged directly into liquid nitrogen (LN2), few of the oocytes were fertilized and developed. To "outrace" chilling injury, oocytes contained in < 1 microliter of EG solution were placed onto electron microscope grids and plunged directly into N2 slush or LN2. After such ultra-rapidly cooled oocytes were warmed, 30% of them cleaved after IVF, and half of these developed into blastocysts-- survival rates equivalent to those for oocytes that had been exposed to EG without any cooling. This method offers promise as a novel way to cryopreserve bovine oocytes.     

Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

A full-scale, self-consistent, non-linear, large-signal model of double-drift hetero-structure IMPATT diode with general doping profile is derived. This newly developed model, for the first time, has been used to analyze the large-signal characteristics of hexagonal SiC-based double-drift IMPATT diode. Considering the fabrication feasibility, the authors have studied the large-signal characteristics of Si/SiC-based hetero-structure devices. Under small-voltage modulation (～ 2%, i.e. small-signal conditions) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode's negative conductance (5 × 10⁶S/m²), susceptance (10.4 × 10⁷ S/m^2}), average breakdown voltage (207.6 V), and power generating efficiency (15%, RF power: 25.0 W at 94 GHz) are obtained as a function of oscillation amplitude (50% of DC breakdown voltage) for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal (> 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all types of IMPATT structures with distributed and narrow avalanche zones. The simulator is made more realistic by incorporating the space-charge effects, realistic field and temperature dependent material parameters in Si and SiC. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form. This study will act as a guide for researchers to fabricate a high-power Si/SiC-based IMPATT for possible application in high-power MM-wave communication systems.     

Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power

Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction Double-Drift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique, developed by the authors, for operation in the Ka-, V- and W-band frequencies. The results are further compared with corresponding Si and Ge homo-junction devices. The study shows high values of device efficiency, such as 23%, 22% and 21.5%, for n-Ge/p-Si IMPATTs at the Ka, V and W bands, respectively. The peak device negative conductances for n-Si/p-Ge and n-Ge/p-Si hetero-junction devices found to be 50.7 ? 10⁶ S/m² and 71.3 ? 10⁶ S/m², which are ～3-4 times better than their Si and Ge counterparts at the V-band. The computed values of RF power-density for n-Ge/p-Si hetero-junction IMPATTs are 1.0 ? 10⁹, 1.1 ? 10⁹ and 1.4 ? 10⁹ W/m², respectively, for Ka-, V- and W-band operation, which can be observed to be the highest when compared with Si, Ge and n-Si/p-Ge devices. Both of the hetero-junctions, especially the n-Ge/p-Si hetero-junction diode, can thus become a superior RF-power generator over a wide range of frequencies. The present study will help the device engineers to choose a suitable material pair for the development of high-power MM-wave IMPATT for applications in the civil and defense-related arena.     

Enhancing quality of experience using peer‐to‐peer overlay on device‐to‐device communications

With the recent development of LTE‐A/5G technologies, data sharing among mobile devices offer an attractive opportunity to reduce Internet access. However, it requires smart strategies to share the data with low trade‐offs in time, cost, and energy. Several existing schemes offer a super‐peer‐based two‐tier model using a distributed hash table (DHT) organization for smart devices having device‐to‐device (D2D)/Bluetooth/WiFi capabilities. The primary focus of these schemes has been to reduce Internet usage by increased D2D content sharing. However, the real challenge is not in creating a two‐tier model, but evolving an efficient overlay that offers enhanced opportunities for D2D content sharing over the existing model. In this paper, we formulated a P‐median‐based selection of tier‐1 devices in a distribution network and solved it using the Lagrangian relaxation method. The tier‐2 devices become clients seeking content sharing services from tier‐1 devices. A strong motivation in this work is to raise a user's perception of the grade of service known as quality of experience (QoE). We analyzed the challenge for QoE assessment in resource‐constrained smartphones under the proposed model of enhanced D2D communication. Our focus is to establish a framework to evaluate QoE for applications and services over LTE‐A/5G networks with an improved D2D communication level. The simulation and the experimental results validate the claim that substantial improvements in QoE are possible with the proposed mathematical model for selecting and placing tier‐1 mobile devices and maintaining a DHT for D2D communication.     

Interface Engineering and Controlling the Friction and Wear of Ultrathin Carbon Films: High sp3 Versus High sp2 Carbons

Understanding and engineering interfaces, and controlling the friction and wear of materials, are extremely important for many technological applications, particularly for magnetic storage technologies and micro‐ and nanoelectromechanical systems (MEMS and NEMS), where one sliding/moving surface comes into contact with another. Ultrathin carbon films are generally employed in most of these technologies. However, their wear and friction mechanisms are not well understood, especially the role of the film–substrate (FS) interface has not been deeply explored and discussed to date. This limits further developments in this field. Through experimental and theoretical experiments, we are able to report on the engineering of a FS interface consisting of high sp³‐ and high sp²‐bonded ultrathin carbon films on Al₂O₃–TiC substrates by introducing a silicon nitride (SiN_x) interlayer and tuning the carbon ion energy. All carbon‐based overcoats show a low coefficient of friction (COF) in the range of 0.08–0.16; however, the high sp³‐bonded C/SiN_x bilayer overcoat reveals the lowest and most stable friction. The friction mechanism is explained using an integrated framework of surface passivation, rehybridization, material transfer, tribolayer formation, and interfaces. We discover that FS interface engineering substantially reduces the wear of ultrathin carbon films while maintaining/reducing the friction. In general, this approach can be applied to control the friction and wear of ultrathin films of diverse materials.     

Retroperitoneal germinoma marked by elevated serum lactic dehydrogenase

A case of primary retroperitoneal germinoma is presented in which markedly elevated serum lactic dehydrogenase levels were present before diagnosis, but declined to normal with abdominal irradiation. It is the first report of lactic dehydrogenase serving as a tumor marker in germinoma.