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排序方式: 共有451条查询结果,搜索用时 171 毫秒
1.
Usui T. Nasu H. Takahashi S. Shimizu N. Nishikawa T. Yoshimaru M. Shibata H. Wada M. Koike J. 《Electron Devices, IEEE Transactions on》2006,53(10):2492-2499
Copper (Cu) dual-damascene interconnects with a self-formed MnSi/sub x/O/sub y/ barrier layer were successfully fabricated. Transmission electron microscopy shows that approximately 2-nm thick and continuous MnSi/sub x/O/sub y/ layer was formed at the interface of Cu and dielectric SiO/sub 2/, and that no barrier was formed at the via bottom because no oxygen was at the via bottom during annealing. No leakage-current increase was observed, and electron energy loss analysis shows that no Cu was in SiO/sub 2/, suggesting that MnSi/sub x/O/sub y/ layer has sufficient barrier properties for Cu, and that the concept of self-forming barrier process works in Cu dual-damascene interconnects. Via chain yield of more than 90% and 50% reduction in via resistance were obtained as compared with physical vapor deposited tantalum barrier, because there is no barrier at the via bottom. In addition, no failure in the stress-induced voiding measurement was found even after a 1600-h testing. No failure in electromigration (EM) testing was found, as the electron flow is from the lower level interconnects through via up to upper level interconnects even after 1000-h testing. At least, four times EM lifetime improvement was obtained in the case of electron flow from upper level interconnect through via down to lower level interconnects. Significant EM lifetime improvement is due to no flux divergence site at the via bottom, resulting from there being no bottom barrier at the via. 相似文献
2.
Hara T. Fukuda K. Kanazawa K. Shibata N. Hosono K. Maejima H. Nakagawa M. Abe T. Kojima M. Fujiu M. Takeuchi Y. Amemiya K. Morooka M. Kamei T. Nasu H. Chi-Ming Wang Sakurai K. Tokiwa N. Waki H. Maruyama T. Yoshikawa S. Higashitani M. Pham T.D. Yupin Fong Watanabe T. 《Solid-State Circuits, IEEE Journal of》2006,41(1):161-169
An 8-Gb multi-level NAND Flash memory with 4-level programmed cells has been developed successfully. The cost-effective small chip has been fabricated in 70-nm CMOS technology. To decrease the chip size, a one-sided pad arrangement with compacted core architecture and a block address expansion scheme without block redundancy replacement have been introduced. With these methods, the chip size has been reduced to 146 mm/sup 2/, which is 4.9% smaller than the conventional chip. In terms of performance, the program throughput reaches 6 MB/s at 4-KB page operation, which is significantly faster than previously reported and very competitive with binary Flash memories. This high performance has been achieved by the combination of the multi-level cell (MLC) programming with write caches and with the program voltage compensation technique for neighboring select transistors. The read throughput reaches 60 MB/s using 16I/O configuration. 相似文献
3.
Kurobe T. Kimoto T. Muranushi K. Nakagawa Y. Nasu H. Yoshimi S. Oike M. Kambayashi H. Mukaihara T. Nomura T. Kasukawa A. 《Electronics letters》2003,39(15):1125-1126
The thermally-controlled laser module, integrating 12 distributed feedback (DFB) lasers in the form of a 2/spl times/6 matrix to realise both high output power and wide wavelength tunability, has been fabricated. The module has shown excellent characteristics, such as high fibre coupled power over 30 mW and tunability over 37 nm. 相似文献
4.
Analytic approaches of thermal stress in plastic-encapslated ICs reliability have been studied using a simple, 2-dimensional model of the cross section of ICs by the finite-element method. To test the validity of the model, the actual stress within the silicon chip was measured using piezoresistive devices. The calculated stress in the silicon chip agreed with the experimental values. The stress distributions were changed by lead-frame properties. Package cracking, and delamination between the molding plastic and the lead-frame were qualitatively explained. We estimated the effect of the plastic properties on stress quantitatively. Furthermore, to test the validity of this model, the temperature change at the silicon chip was measured using the Vf temperature dependency of a diode. The calculated temperature change at the silicon chip agreed with the observed values. A very high temperature gradient was observed near the surface of the plastic immediately after solder dipping. The non-uniform temperature distributions produced different thermal stress distributions than those observed in the steady-state. This result indicated that rapid thermal shock could delaminate the plastic from the lead-frame. We believe that these results can guide the development of an optimum low-stress plastic. 相似文献
5.
The present research focuses on the effect of the concentration and dextrose equivalent (DE) values of tapioca maltodextrin in the aqueous phase on rheological behavior and stability of oil-in-water emulsions prepared with Tween80. The critical flocculation concentrations (CFCs) of oil-in-water emulsions containing tapioca maltodextrin with DE of 16 (DE16), 12 (DE12) and 9 (DE9) were 11%, 9% and 7% (w/w) respectively, as revealed by transmittance measurement. Coalescence was observed as maltodextrin concentration increased above the CFC. The rheological parameters of flow behavior index (n) and consistency index (k) have been well-described by the Herschel–Bulkley model. The relative consistency index (krelative) increased markedly when the concentration of maltodextrin exceeded the CFC because of depleting flocculation. The consistency index (kemulsion) and yield stress (τ0) of emulsions containing tapioca maltodextrin increased with increasing maltodextrin concentration or decreasing DE. The emulsions containing maltodextrin showed Newtonian flow behavior when the maltodextrin concentration was below the CFC. At maltodextrin concentrations above the CFC, emulsions containing maltodextrin exhibited shear thinning behavior. An increase in the maltodextrin concentration resulted in a decrease in the nemulsion until maltodextrin concentration reached 20% (w/w) for DE9, DE12 and 25% (w/w) for DE16. Further increase in the maltodextrin concentration resulted in an increased the nemulsion because of predominant influence of the continuous phase. 相似文献
6.
Sunsanee Udomrati Thidarat Pantoa Shoichi Gohtani Mitsutoshi Nakajima Kunihiko Uemura Isao Kobayashi 《International Journal of Food Science & Technology》2020,55(4):1437-1447
Water-soluble soybean polysaccharide (SSPS) is a naturally occurring emulsifier. SSPS was used as the sole emulsifier to stabilize an oil-in-water (O/W) emulsion. The effects were investigated of different SSPS concentrations (3–20% (w/w)) on the lipid digestibility, rheological properties and stability of O/W emulsions during in vitro digestion model. The droplet size of the emulsions tended to increase during the oral phase because the emulsions were unstable and droplets coalesced, except with a SSPS concentration of 20% (w/w). The presence of SSPS markedly reduced the free fatty acid (FFA) content after its stabilized O/W emulsion passed through in vitro gastrointestinal digestion. The amount of FFA significantly decreased as the concentration of SSPS increased due to SSPS stabilization film on oil droplet surface and high viscous system. SSPS may be an attractive alternative ingredient to control the lipid digestibility of emulsions for various food products. 相似文献
7.
Voltage Control of Static Var Compensator for a Remote System Interconnected by Long‐Distance AC Cables 下载免费PDF全文
Yuji Tamura Shinji Takasaki Yasuyuki Miyazaki Hideo Takeda Shoichi Irokawa Kikuo Takagi Naoto Nagaoka 《Electrical Engineering in Japan》2014,186(3):19-30
The voltage variation in a remote system is large when the system is connected by long‐distance AC cables due to the cable capacitance. In Japan, the longest 54‐km 66‐kV AC submarine cable interconnection between the Kyushu mainland and Goto Islands was commissioned in 2005. It was requested to mitigate the voltage variation caused by switching off and on one circuit of the two circuits in the AC cables when a fault occurs. Since the conventional voltage control methods such as transformer tap changer or shunt capacitor and reactor banks are not sufficient because of their slow response time, a static var compensator (SVC) was installed on the Goto Islands. In such an application, an SVC control method should be developed so as not to override the existing voltage control systems. This paper describes the SVC control method developed for the Goto Islands AC interconnection project, which can be applied to similar situations. The effectiveness of the control method was verified by the results of effective value simulation and of field testing, which was implemented before the SVC was commissioned in 2007. © 2013 Wiley Periodicals, Inc. Electr Eng Jpn, 186(3): 19–30, 2014; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/eej.22337 相似文献
8.
Makoto Tanaka Mikio Taguchi Tsuysohi Takahama Toru Sawada Shigeru Kuroda Takao Matsuyama Shinya Tsuda Akio Takeoka Shoichi Nakano Hiroshi Hanafusa Yukinori Kuwano 《Progress in Photovoltaics: Research and Applications》1993,1(2):85-92
A new solar cell structure named HIT (Heterojunction with Intrinsic Thin layer) has been developed based on new artificially constructed junction (ACJ) technology. In this structure a non-doped a-Si thin layer was inserted between the p(a-Si)/n(c-Si) heterojunction, improving the output characteristics and achieving a conversion efficiency of 18.1%. This structure was applied to cast polycrystalline silicon solar cells of a practical size. A high conversion efficeincy of 13.6% was obtained with a cell size of 10 cm × 10 cm using various technologies, including hydrogen plasma passivation. 相似文献
9.
Masato Nishikuni Tsuyoshi Takahama Shingo Okamoto Kunimoto Ninomiya Hidenori Nishiwaki Shinya Tsuda Akio Takeoka Michotoshi Ohnishi Shoichi Nakano Yukinori Kuwano 《Progress in Photovoltaics: Research and Applications》1994,2(3):211-219
A new approach to high-performance a-Si solar cells was studied. a-Si films prepared at a high substrate temperature (> 250°C) have a higher absorption coefficient and a low Si H2 bond density. the effect of deposition temperature on the open-circuit voltage (Voc) has been investigated systematically for glass/SnO2 Ipin/metal and glass/metal/nip/indium tin oxide (ITO) structure a-Si solar cells. The Voc is found to depend strongly on the thermal history of the p/i interface. A short-circuit current of 19.5 mA/cm−−2 was achieved for an a-Si solar cell using an a-Si i-layer with a thickness of 4000 Å, which was prepared at a substrate temperature of 270°C. 相似文献
10.
Wakako Tsuzuki Shoichi Kobayashi Tateo Suzuki 《Journal of the American Oil Chemists' Society》1998,75(4):535-538
Previously, we devised the efficient modification of lipase, which can be dissolved and still maintain its activity in organic solvents. In this work, the fluorescence of the modified lipase could be detected in chloroform. When glycerides were added to the modified lipase solution, the intrinsic tryptophan fluorescence of the modified lipase decreased, which suggests that the environment of the tryptophan residue was affected by the substrate. The interaction between the modified lipase and glyceride was studied kinetically in terms of fluorescence intensity of the tryptophan residue. Because glyceride is not subject to hydrolysis in nonaqueous solution, the dissociation constant of the enzyme-substrate complex could be determined. Thus, insight into the direct interaction between enzyme and substrate provided some structural information regarding the active site of lipase. 相似文献