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排序方式: 共有906条查询结果,搜索用时 31 毫秒
1.
Graded evolution of anisotropic microstructure during sintering from crystal-oriented powder compact
Shoko Baba Alexandre Maître Nicolas Pradeilles Guy Antou Nobuo Saito Satoshi Tanaka 《International Journal of Applied Ceramic Technology》2020,17(2):677-684
Anisotropic sintering, including shrinkage and grain growth, was examined for c-axis-oriented (Sr,Ca)2NaNb5O15 (SCNN) ceramics, which were prepared by colloidal processing under a magnetic field. In the c-axis-oriented SCNN powder compact, shrinkage and grain growth along the c-axis were higher than those along the a-axis. The anisotropic microstructural development was clearly associated with anisotropic sintering shrinkage. X-ray diffraction, scanning electron microscopy, and energy back scattering diffraction showed that the grain growth of oriented particles by including random grains contribute to the development of the oriented microstructure. Finally, the highly crystal-oriented SCNN ceramics with a densified microstructure were obtained through anisotropic sintering. These results clearly showed the potential to develop a well-defined anisotropic microstructure during sintering by designing and controlling the particle packing structure in a powder compact. 相似文献
2.
Hiroshi Takamatsu Hikaru Yamashiro Nobuo Takata Hiroshi Honda 《International Journal of Refrigeration》2003,26(6):79
Heat and mass transfer in a falling film vertical in-tube absorber was studied experimentally with LiBr aqueous solution. The presented results include the effect of solution flow rate, solution subcooling and cooling water temperature on the absorption in a smooth copper tube 16.05 mm I.D. and 400 mm long. The experimental data in the previous report for a 1200-mm-long tube was also re-examined and compared. It was demonstrated by the observation of the flow in the tube that the break down of the liquid film into rivulets leads to deterioration of heat and mass transfer at lower film Reynolds number or in longer tubes. An attempt to evaluate physically acceptable heat and mass transfer coefficients that are defined with estimated temperature and concentration at the vapor–liquid interface was also presented. 相似文献
3.
Yamaoka M. Shinozaki Y. Maeda N. Shimazaki Y. Kato K. Shimada S. Yanagisawa K. Osada K. 《Solid-State Circuits, IEEE Journal of》2005,40(1):186-194
An on-chip 1-Mb SRAM suitable for embedding in the application processor used in mobile cellular phones was developed. This SRAM supports three operating modes - high-speed active mode, low-leakage low-speed active mode, and standby mode - and uses a subdivisional power-line control (SPC) scheme. The combination of three operating modes and the SPC scheme realizes low-power operation under actual usage conditions. It operates at 300 MHz, with leakage of 25 /spl mu/A/Mb in standby mode, and 50 /spl mu/A/Mb at the low-leakage active mode. This SRAM also uses a self-bias write scheme that decreases of minimum operating voltage by about 100 mV. 相似文献
4.
Nobuhiro Kumada Nobuo Ozawa Nobukazu Kinomura Fumio Muto 《Materials Research Bulletin》1985,20(5):583-589
Pyrochlores of A1?xHxTaO3·nH2O (A=Na,K) were prepared under the hydrothermal conditions. The values of x for these compounds were increased from 0.3 to 0.5 for A=Na and from 0.2 to 0.5 for A=K by treatment with the distilled water. The compounds with x<0.5 were decomposed to a mixture of NaTaO3 and Na2Ta4O11 for A=Na, or to a mixture of KTaO3 and a tetragonal tungsten bronze phase, and those with x=0.5 to a single phase of A2Ta4O11 at elevated temperatures. Below the decomposition temperatures, defect pyrochlores with oxygen vacancies, , were produced. They were hygroscopic, and in the case of A=K and x=0.5 the original phase was recovered by leaving in air for several hours. 相似文献
5.
A Fassati A Bardoni M Sironi DJ Wells N Bresolin G Scarlato M Hatanaka S Yamaoka G Dickson 《Canadian Metallurgical Quarterly》1998,9(17):2459-2468
6.
7.
Y Kubota T Tanaka G Yamaoka M Yamaguchi H Ohnishi K Kawanishi J Takahara S Irino 《Canadian Metallurgical Quarterly》1996,10(4):720-726
We report a large kindred in which a punctate palmoplantar keratoderma (PPK) is associated with malignancy, including Hodgkin's disease, renal, breast, pancreatic and colonic adenocarcinomas. The family was traced through four generations, and over 320 individuals were identified, of whom 49 had punctate PPK. The punctate PPK appeared to be inherited as an autosomal dominant trait with variable penetrance. Ten of the 43 adults (23%) with punctate PPK developed malignancies, and five of these developed before the age of 50. Of the 271 unaffected individuals, six (2%) have developed malignancies, one prior to the age of 50. The association of keratoderma and malignancy is discussed. 相似文献
8.
Nobuo Masaki Tetsuo Yoshida Masaru Miyagawa Iawo Ohshima Kikuo Matsuzawa 《Electrical Engineering in Japan》1992,112(2):58-70
A second-generation model of cubicletype gas-insulated switchgear (C-GIS) with composite insulation incorporating SF6 gas has been developed. The design does not require a gas process in field assembly; it has high reliability and its installation is more rapid; and a further reduction in size is achieved. The design principles are described in detail. 相似文献
9.
10.
Yamaoka M. Maeda N. Shinozaki Y. Shimazaki Y. Nii K. Shimada S. Yanagisawa K. Kawahara T. 《Solid-State Circuits, IEEE Journal of》2006,41(3):705-711
The power consumption of a low-power system-on-a-chip (SoC) has a large impact on the battery life of mobile appliances. General SoCs have large on-chip SRAMs, which consume a large proportion of the whole LSI power. To achieve a low-power SoC, we have developed embedded SRAM modules, which use some low-power SRAM techniques. One technique involves expanding the write margin; another is a power-line-floating write technique, which enables low-voltage write operation. The power-line-floating write technique makes it possible to lower the minimum operating supply voltage by 100 mV. The other techniques involve using a process-variation-adaptive write replica circuit and reducing leakage current. These techniques reduce active power during write operations by 18% and reduce active leakage of the word-line driver by 64%. The prototype SRAM modules achieve 0.8-V operation, and a 512-kb SRAM module achieves 48.4-/spl mu/A active leakage and 7.8-/spl mu/A standby leakage with worst-leakage devices. 相似文献