A high resolution negative working resist,LMR-UV,for g- and i-line lithography

LMR-UV (“low molecular weight resist for uv lithography”), a naphthoquinone-diazide sulfonic acid ester of a novolak resin, is a negative working resist. The mechanism of insolubilization of LMR-UV is based on the facts that the naphthoquinone-diazide moiety is decomposed to indenecarboxylic acid (polar compound) by photolysis upon UV irradiation and that the irradiated resist film insolubilizes in a non-polar developer. LMR-UV reliably forms 0.6 μm lines and spaces over a reflective substrate with steps by using a g-line stepper having a 0.35 NA lens. 0.6 μm-wide aluminum patterns over topography are obtained by use of g-line exposure and reactive ion etching. By use of an i-line aligner (NA = 0.42), LMR-UV resolves 0.25 μm space patterns with overhang profiles. The profiles are due to the large absorption coefficient of 3.8 μm^?1. 0.3 μm wide aluminum patterns are formed by i-line exposure and lift-off metallization.     

Selective O-methylation of phenol with dimethyl carbonate over X-zeolites

The O-methylation of phenol with dimethyl carbonate proceeds selectively in the vapor phase over alkali ion exchanged X-zeolites. Thus, a 76% yield of anisole was obtained with a 93% selectivity over NaX at 553 K. The participation of basic sites in the O-methylation is suggested.     

Thermal Expansion of Solid Solutions in the ZrTiO4—In2O3—M2O5 (M = Sb, Ta) System

Axial and dilatometric thermal expansions and phase transformations were studied for solid solutions having the α-PbO₂ structure in the ZrTiO₄—In₂O₃—M₂O₅ (M = Sb, Ta) system with nominal formulas of Zr _x Ti _y In _z Sb _z O₄ and Zr _x Ti _y In _z Ta _z O₄ where x + y + 2 z = 2. With increased substitution of z , the cell volume increased, the difference in the b parameters at room temperature between those quenched from 1400° and 1000°C decreased, and the thermal expansion decreased. The axial thermal expansion of ZrTi _y In _z · Ta _z O₄ with z = 0.3 was almost identical with that of HfTiO₄, and those with z = 0.4 and z = 0.45 were smaller than that of HfTiO₄. Unit-cell volumes of these compound were compared with those of single oxides to make it clear that the unit-cell volume of ZrTiO₄ was small anomalously and to distinguish the normal and abnormal substitution systems. These results were explained by the working hypothesis proposed for these compounds.     

Colorimetric microdetermination of sulphites in foods by use of the modified rankine apparatus. IV.

Summary Detection and determination of traces of sulphites in foods was attempted by use of the modified Rankine apparatus and pararosaniline colorimetry. Replacement of alkaline titration reported previously by pararosaniline colorimetry lowered the absolute detection limit from 30 g (titration method) to 2 g. In view of clean analysis, in the color developing system, 0.1 N-sodium hydroxide was used in place of mercuric chloride solution commonly used as an absorbant of sulphites. In order to prevent oxidative decomposition of sulphites during operation, nitrogen gas was used as carrier instead of air. Dimedone and sodium azide were used for the elimination of aldehydes and nitrites, respecitvely, in the sample, which will disturb the color development of sulphites with pararosaniline-formaldehyde reagents. With this improved method, it was possible to determine the residual sulphites in frozen peeled shrimps, sugared beans and other foods with low sulphite contents accurately.

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Colorimetrische Mikrobestimmung von Sulfiten in Lebensmitteln bei Anwendung der modifizierten IV. Rankine Apparatur

Zusammenfassung Geringe Sulfitmengen in Lebensmitteln (geschälte Garnelen, gezuckerte Bohnen) können colorimetrisch bestimmt werden. Die neuentwickelte Methode beruht auf einer Kombination von colorimetrischer Bestimmung mittels p-Rosanilin und der Bestimmungsmethode nach Rankine. Auf diese Weise lassen sich Gehalte von 2 g noch genau bestimmen. Bei der Farbentwicklung wurde das giftige Quecksilbertetrachlorid durch 0.1 n-NaOH ersetzt, anstelle von Luft Stickstoff als Trägergas verwendet und somit eine Oxydation des Sulfits während der Bestimmung vermieden. Da Nitrit und Aldehyde die Farbentwicklung stören, wurde ihr Einfluß durch Dimedon und Natriumazid ausgeschaltet.

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Studies on the Analyses of Sulphites in Foods (IV)     

Template Deformation‐Tailored ZnO Nanorod/Nanowire Arrays: Full Growth Control and Optimization of Field‐Emission

Here, a facile and effective route toward full control of vertical ZnO nanorod (NR)/nanowire (NW) arrays in centimeter‐scale areas and considerable improvement of field‐emission (FE) performance is reported. Controlled deformation of colloidal crystal monolayer templates is introduced by heating near glass‐transition temperature. The NR/NW density, uniformity, and tapering were all adjusted through selection of template size and deformation, and electrolyte composition. In line with the adjustments, the field‐emission performance of the arrays is significantly improved. A low turn‐on electric field of 1.8 V µm^?1, a field‐enhancement factor of up to 5 750, and an emitting current density of up to 2.5 mA cm^?2 were obtained. These improved parameters would benefit their potential application in cold‐cathode‐based electronics.     

NH3／H2O2溶液腐蚀下多孔硅光致荧光

用光致荧光谱、傅里叶变换红外光谱（ＦＴＩＲ）和扫描电子显微镜（ＳＥＭ）对用阳极氧化法制成的多孔硅层在１％ＮＨ３／Ｈ２Ｏ２溶液中的腐蚀现象进行了研究。红外分析表明，Ｓｉ－Ｏ键和Ｈ－Ｏ键的强度随ＮＨ３／Ｈ２Ｏ２溶液的腐蚀时间的增加而增加，Ｓｉ－Ｈ键强主匠随腐蚀时间增加而减少。光致荧光谱的峰值在腐蚀开始时先下降后上升，半高宽变窄，谱峰的以边明显蓝移。分析研究表明，１％ＮＨ３／Ｈ２Ｏ２溶液对多孔硅层有腐蚀     

Preparation and properties of CuInS2 thin film prepared from electroplated precursor

Thin CuInS₂ films were prepared by sulfurization of Cu/In bi-layers. First, the precursor layer was electroplated onto the treated surface of Mo-coated glass. Observation of the cross-section prepared by focused ion beam (FIB) etching revealed that the void-free film was initially formed on the top surface of the precursor layer and continued to grow until the advancing front of the film reached the Mo layer. The nucleation of voids near the bottom of the CuInS₂ film followed. To determine whether the condition of the Cu/In alloy influences the CuInS₂ quality we investigated the Cu/In alloy state using FIB. We found that the annealed precursor of low Cu/In ratio (1.2) has several voids in the mid position in the layer compared with Cu-rich precursor (1.6). The cross-sectional view of the Cu-rich absorber layer is uniform compared with the low copper absorber layer. Thin film solar cells were fabricated using the CuInS₂ film (Cu/In ratio: 1.2) as an optical absorber layer. It was found that the optimization of a sulfurization period is important in order to improve the cell efficiency. We have not yet obtained good results with high Cu-rich absorber because of a blister problem. This blister was found before sulfurization. So, we are going to solve this blister problem before sulfurization.     

Size Effects on the Mechanical Properties of Nanoporous Graphene Networks

It is essential to understand the size scaling effects on the mechanical properties of graphene networks to realize the potential mechanical applications of graphene assemblies. Here, a “highly dense‐yet‐nanoporous graphene monolith (HPGM)” is used as a model material of graphene networks to investigate the dependence of mechanical properties on the intrinsic interplanar interactions and the extrinsic specimen size effects. The interactions between graphene sheets could be enhanced by heat treatment and the plastic HPGM is transformed into a highly elastic network. A strong size effect is revealed by in situ compression of micro‐ and nanopillars inside electron microscopes. Both the modulus and strength are drastically increased as the specimen size reduces to ≈100 nm, because of the reduced weak links in a small volume. Molecular dynamics simulations reveal the deformation mechanism involving slip‐stick sliding, bending, buckling of graphene sheets, collapsing, and densification of graphene cells. In addition, a size‐dependent brittle‐to‐ductile transition of the HPGM nanopillars is discovered and understood by the competition between volumetric deformation energy and critical dilation energy.     

Spectroscopic and Photoluminescent Properties of Indium Zinc Oxide (IZO) and IZO/Ag/IZO Sandwiched Film

We report the ellipsometric and photoluminescence (PL) properties of Indium zinc oxide (IZO) films, which were grown by radio frequency sputtering under Ar and O₂ atmospheres. IZO films grown under an O₂ atmosphere (IZO (O₂)) showed enhanced PL properties when compared to the films grown under an Ar atmosphere (IZO (Ar)), particularly with respect to the band-edge emission. The enhancement of band-edge emission can be attributed to the reduction in the non-emissive defect states related to oxygen vacancies, which were repaired by sputtering under O₂ atmosphere, whereas the PL enhancement in green region is probably due to the formation of the different types of defects under the excess oxygen environment. This was also supported by the results of time-resolved PL measurements, where the band-edge emission of IZO (Ar) showed rapid decay with a 50 ps lifetime, which indicates the dominance of the relaxation pathway to underlying defect states. In contrast, the PL decay profiles of IZO (O₂) for band-edge and emissive defect states showed moderate decay with time-constants of 2.3 ns and 5.7 ns, respectively. The exciton relaxation dynamics were sensitive to the presence and its kinds of defect states, which were controlled by the growth conditions.     

Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

Electrical and physical characteristics of the Al₂O₃/InGaAs interfaces with (1 1 1)A and (1 0 0) orientations were investigated in an attempt to understand the origin of electron mobility enhancement in the (1 1 1)A-channel metal-insulator-semiconductor field-effect-transistor. The (1 1 1)A interface has less As atoms of high oxidation states as probed by X-ray photoelectron spectroscopy. The electrical measurements showed that energy distribution of the interface traps for the (1 1 1)A interface is shifted toward the conduction band as compared to that for the (1 0 0) interface. Laterally-compressed cross-section transmission electron microscopy images showed that the characteristic lengths of the interface roughness are different between the (1 1 1)A and (1 0 0) interfaces. The contributions of the Coulomb and roughness scattering mechanisms are discussed based on the experimental results.