Defocusing image to pattern contact holes using attenuated phase shift masks

The patterning of contact holes by selecting out-of-focus image plane (defocus) using attenuated phase shift masks (APSM) has been studied. Defocus is found to enhance the image modulation at low partial coherence for contact holes with negative local average of mask function. Semi-dense holes up to 130 nm in 8% APSM have been printed by 0.5 μm defocus at a partial coherence of 0.31 using KrF scanner with highest numerical aperture of 0.68. However, these holes were closed with in-focus imaging. Defocus is also found to be beneficial for patterning the pitches that have extensive side lobes with in-focus imaging.     

A behavioral approach to linear exact modeling

The behavioral approach to system theory provides a parameter-free framework for the study of the general problem of linear exact modeling and recursive modeling. The authors present the solution of the (continuous-time) polynomial-exponential time series modeling problem. Both recursive and nonrecursive solutions are provided and classified according to properties like complexity and controllability. It is shown, in particular, that recursive modeling corresponds to updating by means of a cascade inter-connection of systems. As a special case, the solution of several other problems, such as rational interpolation, realization, and modeling of arbitrary discrete-time time series, is obtained     

Frequency domain identification of Wiener models

This paper proposes a frequency domain algorithm for Wiener model identifications based on exploring the fundamental frequency and harmonics generated by the unknown nonlinearity. The convergence of the algorithm is established in the presence of white noise. No a priori knowledge of the structure of the nonlinearity is required and the linear part can be nonparametric.     

Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition

The effects of nitrogen-beam voltage on the structure, stress, energy band gap and hardness of AIN thin films deposited on Si (111), Si (100) and sapphire (0001) by ion beam assisted deposition (IBAD) are reported. As the nitrogen-beam voltage was increased from 50 to 200 V, the stress and disorder in the AIN films increased as determined by X-ray diffraction, FTIR and Raman spectroscopy. The preferred orientation of the film's c-axis changed from completely normal to the film at 100 V, to a mixture of normal and in the plane of the film at 200 V. For AIN films deposited under the same conditions, the films were more highly oriented on sapphire (0001) than in Si (111). The hardness of the films increased from 18.2 to 23.7 GPa with the nitrogen-beam voltage, and possible reasons for this change in hardness are considered.     

Complete mobile email management

Years have lapsed since the inauguration of the first Wireless Application Protocol (WAP) application. One of the main reasons for the lukewarm response so far may be attributed to the lack of a “Killer” application. Many companies and developers have attempted to replicate email services (an Internet Killer appplication) within the WAP realm, but till now, no significant success has been reported. This paper will first discuss on the key functions which are lacking in the present WAP-email service, and which are arguably necessary if a much larger user base is to be attracted to these services. A new system will be proposed which can enable the user to send files residing in a remote personal computer (PC) as attachments to his emails using WAP-enabled mobile devices. The implementation of the system will be presented in details. Issue relating to the connection to various types of email servers and the security of the system will also be addressed in the paper.