Oxidation of unsaturated fatty acids with ruthenium and osmium tetroxide

The oxidation of the alkali metal salts of oleic and undecylenic acid with ruthenium and osmium tetroxides is reported. The oxidants are used in catalytic amounts in conjunction with an excess of the in-expensive cooxidant sodium hypochlorite. Ruthenium tetroxide cleaves the carbon-carbon double bond of potassium oleate, to give pelargonic and gives sebacic acid. With osmium tetroxide, hydroxylation of the double bond of potassium oleate gives a 95% yield oferythro-9,10-dihydroxystearic acid. The osmium tetroxide oxidation of sodium undecylenate results in the formation of 10,11-dihydroxyundecanoic acid and the cleavage product sebacic acid in varying yields.     

AlGaInP visible resonant cavity light-emitting diodes

Visible (670-nm) resonant cavity light-emitting diodes (RCLEDs) composed entirely of AlGaInP alloys are discussed. The devices consist of a strained quantum well optical cavity active region surrounded by AlInP/(AlGa)InP distributed Bragg reflectors (DBRs). The bottom DBR is a 60.5 period high reflector while the top partial reflector, which determines the emission linewidth, is a five-period output coupling DBR with a reflectance of about 57%. The devices exhibit linewidths of 4.8 nm (13.3 meV) at 300 K and are promising for plastic fiber communication systems and monochromatic displays     

Room-temperature operation of InAs quantum-dash lasers on InP (001)

The first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP (001) substrates are reported. Pulsed room-temperature operation demonstrates wavelengths from 1.60 to 1.66 μm for one-, three-, and five-stack designs, a threshold current density as low as 410 A/cm² for single-stack uncoated lasers, and a distinctly quantum-wire-like dependence of the threshold current on the laser cavity orientation. The maximal modal gains for lasing in the ground-state with the cavity perpendicular to the dash direction are determined to be 15 cm^-1 for single-stack and 22 cm^-1 for five-stack lasers     

Visible (660 nm) resonant cavity light-emitting diodes

The demonstration of the first visible resonant cavity light-emitting diodes (RCLEDs) is reported. The devices consist of an InAlGaP strained quantum well active region surrounded by AlAs/AlGaAs distributed Bragg reflectors. Linewidths from 0.9 mm (2.6 meV) to 45 nm (12.8 meV) were obtained by varying the cavity factor (Q).<>     

Very low threshold current density room temperature continuous-wavelasing from a single-layer InAs quantum-dot laser

Continuous-wave (CW) lasing operation with a very low threshold current density (J_th=32.5 A/cm²) has been achieved at room temperature by a ridge waveguide quantum-dot (QD) laser containing a single InAs QD layer embedded within a strained InGaAs quantum well (dot-in-well, or DWELL structure). Lasing proceeds via the QD ground state with an emission wavelength of 1.25 μm when the cavity length is longer than 4.2 mm. For a 5-mm long QD laser, CW lasing has been achieved at temperatures as high as 40°C, with a characteristic temperature T₀ of 41 K near room temperature. Lasers with a 20 μm stripe width have a differential slope efficiency of 32% and peak output power of >10 mW per facet (uncoated)     

High-power AlGaInAs strained multiquantum well lasers operating at 1.52 /spl mu/m

1.75 W CW power in AlGaInAs-InP strained QW lasers is demonstrated. Room temperature threshold current densities are 410 A/cm/sup 2/, and the characteristic temperature is 69 K. The variation in the external differential efficiency with cavity length and temperature reveal the optimum length and show how nonradiative recombination mechanisms limit the performance.     

The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire

In agreement with previous work,¹² a thin, low temperature GaN buffer layer, that is used to initiate OMVPE growth of GaN growth on sapphire, is shown to play a critical role in determining the surface morphology of the main GaN epilayer. X-ray analysis shows that the mosaicity of the main GaN epilayer continues to improve even after several μm of epitaxy. This continuing improvement in crystal perfection correlates with an improvement in Hall mobility for thicker samples. So far, we have obtained a maximum mobility of 600 cm²/V-s in a 6 μm GaN epilayer. Atomic force microscopy (AFM) analysis of the buffer layer and x-ray analysis of the main epilayer lead us to conclude that the both of these effects reflect the degree of coherence in the main GaN epitaxial layer. These results are consistent with the growth model presented by Hiramatsu et al., however, our AFM data indicates that for GaN buffer layers partial coherence can be achieved during the low temperature growth stage.     

Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirror

A surface emitting laser diode (SELD) with two distributed Bragg reflectors (DBR) and semiconductor multilayer air-bridge-supported top mirror is fabricated. A low threshold current of 1.5 mA is achieved under room temperature CW operation. The spectrum shows a strong peak at 891 nm with a FWHM of 10 AA. With light emission from the top Bragg reflector instead of from the back side of the substrate, laser arrays are easily formed with this novel structure.<>     

Secondary organic aerosol formation from the photooxidation of p- and o-xylene

The formation of secondary organic aerosol (SOA) from the photooxidation of xylene isomers (m-, p-, and o-xylenes) has been extensively investigated. The dependence of SOA aerosol formation on the structure of xylene isomers in the presence of NO was confirmed. Generally, SOA formation of p-xylene was less than that of m- and o-xylenes. This discrepancy varies significantly with initial NOx levels. In a NOx-free environment, the difference of aerosol formation between o- and p-xylenes becomes insignificant. Several chemical pathways for the SOA dependence on structure and NOx are explored, with the experimental findings indicating that organic peroxides may be a major key to explaining SOA formation from aromatic hydrocarbons.     

The Effect of ultra‐high speed twin screw extrusion on ABS/organoclay nanocomposite blend properties

Acrylonitrile butadiene styrene (ABS) nanocomposites containing Cloisite 11 organoclay at 2 wt% were prepared using a 60 L/D ultra‐ high speed twin screw extruder (TSE), with speeds ranging from 400 to 4000 rpm. The purpose of this study was to investigate the effect of high shear melt processing on the intercalation and exfoliation of organoclay in the polymer, as well as the mechanical and rheological properties of the material. X‐ray Diffraction (XRD), and Transmission Electron Microscopy (TEM) results showed better intercalation of the nanofiller with increasing screw speed up to a point, and indicated an exfoliated structure of the nanocomposites extruded at 4000 rpm. Mechanical and rheological testing results indicated that by adding organoclay to ABS, the properties improved with increasing screw speed up to an optimum value of 2000 rpm. However, at the higher screw speeds of 3000 and 4000 rpm, the intense shear history led to a decrease in properties, most likely due to chain scission and molecular weight reduction. Similar trends were observed in rheological properties of the nanocomposite as well. At 2000 rpm, the results indicate that the lowering of the molecular weight due to shear effects is balanced by good intercalation/exfoliation of the organoclay. POLYM. ENG. SCI., 57:60–68, 2017. © 2016 Society of Plastics Engineers