Microprocessor-Based Control of an Ion Beam Deposition System

A microprocessor-based system with 32 A/D, 24 D/A, and 16 ac load controllers, has been designed and built to monitor and control an ion beam thin-film deposition system. The A/D and D/A channels have electrical isolation of 7.5 kV between channels and between input and output. The microprocessor system keeps the ion beam deposition parameters stable for extended periods of operation and it is proposed as a means to greatly simplify switching from one deposition species to another to grow thin multilayer or alloy films.     

Generalisations of Heyman's and Foulkes' theorems using dual formulation

Existing duality principles in structural optimisation are briefly reviewed and then they are extended to structures with segment-wise constant cross-sections. All theories are discussed in the particular context of optimal plastic beam design with symmetric convex specific cost functions and are confirmed by independent calculations on illustrative examples. It is shown that the optimal solution is always associated with a displacement field in which the mean absolute curvature value for each segment equals the subgradient of the specific cost function, with respect to the maximum absolute moment value for that segment. Moreover, the dual problem consists of the maximisation of the difference of two terms: the first one is the integral of the product of load and deflection (external work), and the second is the sum of products of segment lengths and the mean complementary cost values (taken with respect to the mean absolute curvature for that segment). Finally, some tentative proposals for a class of non-convex optimisation problems are presented. For special cases, the proposed general statements reduce to theorems by Heyman, Foulkes and Hemp.     

Resonant neutron filters in elemental analysis and radiography

Translated from Atomnaya Énergiya, Vol. 67, No. 4, pp. 271–274, October, 1989.     

Measurement of the delayed-neutron yields in the fission of233U,236U,237Np,240Pu,and241Pu by neutrons from the spectrum of a fast reactor

Translated from Atomnaya Énergiya, Vol. 66, No. 2, pp. 100–103, February, 1989.     

Dosimetric characteristic of VVR-M reactor with respect to tritium

Translated from Atomnaya Énergiya, Vol. 67, No. 2, pp. 111–113, August, 1989.     

Multifunctional alkylphenol additive

Translated from Khimiya i Tekhnologiya Topliv i Masel, No. 2, pp. 14–15, February, 1989.     

Power-dependent dispersion in far-off-resonant raman scattering

We investigate the saturation effects of power broadening, Stark shifting, and population transfer on Stokes conversion in stimulated Raman scattering. We do not make the usual rotating wave approximation because the detuning from the next electronic state is assumed to be in the optical regime. Retaining the counter-rotating terms allows an exact determination of the pump and Stokes indexes of refraction. Steady-state solutions for the Stokes intensity and phase are obtained and the effects of making the rotating wave approximation (RWA) are discussed. Finally, we examine the behavior of these solutions for Stokes conversion in hydrogen gas when geometric propagation is appropriate.