Linearized method: A new approach for kinetic analysis of central dopamine D(2) receptor specific binding

We proposed a new method (;linearized method') to analyze neuroleptic ligand-receptor specific binding in a human brain using positron emission tomography (PET). We derived the linear equation to solve four rate constants, k(3), k(4), k(5), k(6) from PET data. This method does not demand a radioactivity curve in plasma as an input function to the brain, and can perform fast calculations in order to determine rate constants. We also tested the nonlinearized method including nonlinear equations which is a conventional analysis using plasma radioactivity corrected for ligand metabolites as an input function. We applied these methods to evaluate dopamine D(2) receptor specific binding of [(11)C] YM-09151-2. The value of B(max)/K(d)=k(3)/k (4) obtained by the linearized method was 5.72+/-3.1 which was consistent with the value of 5.78+/-3.4 obtained by the nonlinearized method.     

Hematopoietic–Mesenchymal Signals Regulate the Properties of Mesenchymal Stem Cells

It is well known that the properties of hematopoietic stem/progenitor cells (HSCs), such as their self-renewal ability and multipotency, are maintained through interactions with mesenchymal stem/stromal cells (MSCs). MSCs are rare cells that are present in the bone marrow and are useful for clinical applications due to their functional ability. To obtain the necessary number of cells, MSCs must be cultured to expand, but this causes a remarkable decrease in stem cell properties, such as multipotency and proliferation ability. In this study, we show that the c-Mpl signal, which is related to the maintenance of hematopoietic stem cells, has an important effect on the proliferation and differentiation ability of MSCs. Utilizing a co-culture system comprising MSCs and HSCs, it is suggested that signaling from hematopoietic cells to MSCs supports cell proliferation. Interestingly, the enhanced proliferation ability of the HSCs was decreased in c-Mpl knock-out HSCs (c-Mpl-KO). In addition, the MSCs co-cultured with c-Mpl-KO HSCs had reduced MSC marker expression (PDGFRa and Sca-1) compared to the MSCs co-cultured with c-Mpl-wild-type HSCs. These results suggest that a hematopoietic–mesenchymal signal exists, and that the state of the HSCs is important for the stability of MSC properties.     

Mutated KIT Tyrosine Kinase as a Novel Molecular Target in Acute Myeloid Leukemia

KIT is a type-III receptor tyrosine kinase that contributes to cell signaling in various cells. Since KIT is activated by overexpression or mutation and plays an important role in the development of some cancers, such as gastrointestinal stromal tumors and mast cell disease, molecular therapies targeting KIT mutations are being developed. In acute myeloid leukemia (AML), genome profiling via next-generation sequencing has shown that several genes that are mutated in patients with AML impact patients’ prognosis. Moreover, it was suggested that precision-medicine-based treatment using genomic data will improve treatment outcomes for AML patients. This paper presents (1) previous studies regarding the role of KIT mutations in AML, (2) the data in AML with KIT mutations from the HM-SCREEN-Japan-01 study, a genome profiling study for patients newly diagnosed with AML who are unsuitable for the standard first-line treatment (unfit) or have relapsed/refractory AML, and (3) new therapies targeting KIT mutations, such as tyrosine kinase inhibitors and heat shock protein 90 inhibitors. In this era when genome profiling via next-generation sequencing is becoming more common, KIT mutations are attractive novel molecular targets in AML.     

High performance double-doped InAlAs/InGaAs/InP heterojunction FET with potential for millimetre-wave power applications

Lattice matched InAlAs/InGaAs/InP heterojunction field-effect transistors (HJFETs), which have carrier supplying layers on and beneath the undoped InGaAs channel layer, have been successfully fabricated. A selective recess of the InGaAs channel edge at a mesa sidewall together with the use of a wide recess gate structure leads to a 5.7 V gate-drain breakdown voltage without kink effects. The fabricated HJFET with a 0.15*100 mu m/sup 2/ T-shaped gate exhibits a 700 mA/mm maximum drain current, a voltage gain of 14, and a 345 GHz maximum frequency of oscillation.<>     

A circuit technology for high-speed battery-operated 16-Mb CMOSDRAM's

A battery-operated 16-Mb CMOS DRAM with address multiplexing has been developed by using an existing 0.5-μm CMOS technology. It can access data in 36 ns when powered from a 1.8-V battery-source, and 20 ns at 3.3 V. However, this device requires a mere 57 mA of operating current for an 80-ns cycle time and only 5 μA of standby current at 3.3 V. To achieve both high-speed and low-power operation, the following four circuit techniques have been developed: 1) a parallel column access redundancy (PCAR) scheme coupled with a current sensing address comparator (CSAC), 2) an N&PMOS cross-coupled read-bus-amplifier (NPCA), 3) a gate isolated sense amplifier (GISA) with low V_T, and 4) a layout that minimizes the length of the signal path by employing the lead on chip (LOC) assembly technique     

Transoceanic WDM System with More Than 100 Gb/s Capacity

This paper reviews several key technologies to realize a transoceanic wavelength-division-multiplexing (WDM) system with more than 100 Gb/s capacity. The key technologies include a novel gain equalization scheme, a broadband erbium-doped fiber amplifier, a chromatic dispersion compensation technique at a transmitter, and a RZ modulation format. Employing these new technologies, we successfully demonstrated a 32 channel 5.3 Gb/s (total capacity of 170 Gb/s) WDM signal transmission over 9879 km.     

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

The tunnel injection transit time (TUNNETT) diodes with p⁺p⁺n⁺n⁻n⁺ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p⁺n⁺) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of −60 dBc/Hz at 1 kHz bandwidth.     

A PWM signal processing core circuit based on a switched currentintegration technique

A highly functional circuit for pulse width modulation (PWM) signal processing is proposed as a core of the A-D merged circuit architecture for time-domain information processing. The core circuit employs a switched-current integration technique as its computing architecture and functions as a linear arithmetic operator, a memory, and also a delaying device of PWM signals. A 0.8-μm CMOS test chip includes 110 transistors plus two capacitors and performs parallel additions and multiplications at the accuracy of 1.2 ns. A cumulative property of the technique allows the circuit to serve as a low-power accumulator that consumes 23% of the energy of the full digital 7-b accumulator. A PWM multiply-accumulate unit and a nonlinear operation unit are also proposed to extend functionality of the circuit. Since the PWM signal carries multibit data in a binary amplitude pulse, these circuits can be favorably applicable to low-voltage and low-power designs in the deep submicrometer era