Association of cytoskeletons with the Golgi apparatus: three-dimensional observation and computer-graphic reconstruction

The association of cytoskeletons with the Golgi apparatus (GA) in cultured 3Y1 cells was investigated by stereo electron microscopy of thick sections and computer-graphic reconstruction of serial thin sections. The 3-dimensional analysis has demonstrated that: 1) both microtubules (MT) and vimentin intermediate filaments (IF) were abundantly present in close vicinity to GA, and some of them were closely associated with GA; and 2) such GA-associated cytoskeletons were attached to GA either at their termini or at their lateral side. The present observations suggest that both MT and vimentin IF are responsible for maintaining the structural integrity of GA.     

PZT MIM capacitor with oxygen-doped Ru-electrodes for embedded FeRAM devices

An add-on-type, Pb(Zr,Ti)O/sub 3/ (PZT) metal-insulator- (MIM) capacitor on Al multilevel interconnects is developed for embedded FeRAM devices, concluding that the oxygen-doping into the ruthenium (Ru) electrodes is crucial for obtaining large remnant polarization under a limited process temperature below 450/spl deg/C. The oxygen-doped, Ru bottom-electrode with a granular structure reduces the PZT sputtering temperature below 450/spl deg/C to obtain the ferroelectric perovskite-phase. On the other hand, oxygen doping into the Ru top-electrode suppresses the reductive damage at the interface between the top-electrode and the PZT, keeping the leakage current low. The PZT MIM capacitor with these oxygen-doped, Ru electrodes exhibits the remnant polarization of 21 /spl mu/C/cm/sup 2/ on the Al multilevel interconnects with no degradation of the interconnect reliability, thus applicable to the embedded FeRAM in 0.25 /spl mu/m-CMOS logic LSIs.     

Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation

We propose degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics. Since symmetrical normal and reverse characteristics indicate Joule-heating degradation whereas asymmetrical characteristics indicate hot-carrier degradation, they can be clearly and easily classified. Moreover, degradation occurrence is contrasted between standard and fine TFTs. Finally, behavior of the hot-carrier degradation is analyzed.     

Criteria for versatile GaN MOVPE tool:high growth rate GaN by atmospheric pressure growth

Growth rate has a direct impact on the productivity of nitride LED production.Atmospheric pressure growth of GaN with a growth rate as high as 10μm/h and also Al_0.1Ga_0.9N growth of 1μm/h by using 4 inch by 11 production scale MOVPE are described.XRD of（002） and（102） direction was 200 arcsec and 250 arcsec, respectively.Impact of the growth rate on productivity is discussed.     

Robust porous SiOCH/Cu interconnects with ultrathin sidewall protection liners

Robust porous low-k/Cu interconnects have been developed for 65-nm-node ultralarge-scale integrations (ULSIs) with 180-nm/200-nm pitched lines and 100-nm diameter vias in a single damascene architecture. A porous plasma-enhanced chemical vapor deposition (PECVD)-SiOCH film (k=2.6) with subnanometer pores is introduced into the intermetal dielectrics on the interlayer dielectrics of a rigid PECVD-SiOCH film (k=2.9). This porous-on-rigid hybrid SiOCH structure achieves a 35% reduction in interline capacitance per grid in the 65-nm-node interconnect compared to that in a 90-nm-node interconnect with a fully rigid SiOCH. A via resistance of 9.7 /spl Omega/ was obtained in 100-nm diameter vias. Interconnect reliability, such as electromigration, and stress-induced voiding were retained with interface modification technologies. One of the key breakthroughs was a special liner technique to maintain dielectric reliability between the narrow-pitched lines. The porous surface on the trench-etched sidewall was covered with an ultrathin plasma-polymerized benzocyclobuten liner (k=2.7), thus enhancing interline time-dependent dielectric breakdown reliability. The introduction of a porous material and the control of the sidewall are essential for 65-nm-node and beyond scaled-down ULSIs to ensure high levels of reliability.     

Durable Ultraflexible Organic Photovoltaics with Novel Metal‐Oxide‐Free Cathode

Flexible and stretchable organic photovoltaics (OPVs) are promising as a power source for wearable devices with multifunctions ranging from sensing to locomotion. Achieving mechanical robustness and high power conversion efficiency for ultraflexible OPVs is essential for their successful application. However, it is challenging to simultaneously achieve these features by the difficulty to maintain stable performance under a microscale bending radius. Ultraflexible OPVs are proposed by employing a novel metal‐oxide‐free cathode that consists of a printed ultrathin metallic transparent electrode and an organic electron transport layer to achieve high electron‐collecting capabilities and mechanical robustness. In fact, the proposed ultraflexible OPV achieves a power conversion efficiency of 9.7% and durability with 74% efficiency retention after 500 cycles of deformation at 37% compression through buckling. The proposed approach can be applied to active layers with different morphologies, thus suggesting its universality and potential for high‐performance ultraflexible OPV devices.     

Controllable 1D Patterned Assembly of Colloidal Quantum Dots on PbSO4 Nanoribbons

Control of the 1D self‐assembly pattern of colloidal quantum dots (QDs) on PbSO₄ nanoribbon (NRb) templates is achieved. The internal structure of the NRbs is investigated by X‐ray diffraction, revealing the isotropic packing of the PbSO₄ nanoclusters in the NRbs. Colloidal QDs in a chloroform/hexane mixture are adsorbed onto the region close to the edges of the NRbs and form a 1D assembly of straight single line or double lines by controlling the amount of OAm. This is the first demonstration of a densely packed 1D self‐assembly of colloidal QDs with a straight line pattern without the use of any molecular bridge or adhesive. Atomic force microscopy measurements of the NRbs show depressions in the phase profile along the width of the NRbs, corresponding to the position of the 1D QD chain. The amount of adsorbed QDs on the NRbs in solution decreases as the addition of OAm increases, suggesting that additional OAm prevents interaction between the QDs and NRbs but facilitates the uniform adsorption of the 1D assembly. The low‐dimensional self‐assembly of colloidal QDs in this study opens up the possibility for the creation of anisotropically assembled QD superstructures.     

Atomistic origin of high-quality “novel SiON gate dielectrics”

We have investigated the effect of the oxygen incorporation into SiN films by the first principles calculations. The calculated results show that the oxygen incorporation tends to generate defect states in SiN band gap by forming dangling bonds and floating bonds of Si. Based on the calculated results, it is also indicated that the high quality SiON film can be fabricated by suppressing the incorporation of O atoms into the SiN film, reproducing the reported experiments.     

Selective Determination of Dopamine on a Boron‐Doped Diamond Electrode Modified with Gold Nanoparticle/Polyelectrolyte‐coated Polystyrene Colloids

Negatively charged gold nanoparticles (AuNPs) and a polyelectrolyte (PE) have been assembled alternately on a polystyrene (PS) colloid by a layer‐by‐layer (LBL) self‐assembly technique to form three‐dimensional (Au/PAH)₄/(PSS/PAH)₄ multilayer‐coated PS spheres (Au/PE/PS multilayer spheres). The Au/PE/PS multilayer spheres have been used to modify a boron‐doped diamond (BDD) electrode. Cyclic voltammetry is utilized to investigate the properties of the modified electrode in a 1.0 M KCl solution that contains 5.0 × 10^?3 M K₃Fe(CN)₆, and the result shows a dramatically decreased redox activity compared with the bare BDD electrode. The electrochemical behaviors of dopamine (DA) and ascorbic acid (AA) on the bare and modified BDD electrode are studied. The cyclic voltammetric studies indicate that the negatively charged, three‐dimensional Au/PE/PS multilayer sphere‐modified electrodes show high electrocatalytic activity and promote the oxidation of DA, whereas they inhibit the electrochemical reaction of AA, and can effectively be used to determine DA in the presence of AA with good selectivity. The detection limit of DA is 0.8 × 10^?6 M in a linear range from 5 × 10^?6 to 100 × 10^?6 M in the presence of 1 × 10^?3 M AA.